AOTF38A6L/AOT38A6L 6V a MOS5 TM NChannel Power Transistor General Description Proprietary amos5 TM technology Low R DS(ON) Optimized switching parameters for better EMI performance Enhanced body diode for robustness and fast reverse recovery Product Summary V DS @ T j,max 7V 44A I DM R DS(ON),max <.38Ω Q g,typ E oss @ 4V nc.6mj Applications SMPS with PFC, Flyback and LLC topologies Silver ATX,adapter, TV, lighting, Server power % UIS Tested % R g Tested TO TOF D AOT38A6L G D S AOTF38A6L G D S G S Orderable Part Number Package Type Form Minimum Order Quantity AOT38A6L TO Green Tube AOTF38A6L TOF Green Tube Absolute Maximum Ratings T A =5 C unless otherwise noted Parameter DrainSource Voltage GateSource Voltage Symbol V DS V GS AOT38A6L V GS GateSource Voltage (dynamic) AC( f>hz) ±3 V Continuous Drain T C =5 C * I D Current T C = C 7. 7.* A Pulsed Drain Current C Avalanche Current C I DM I AR 44.5 A Repetitive avalanche energy C 3. mj E AR Single pulsed avalanche energy G (T J =5 C, V GS =V, I L =Apk, L=5mH, R GS =5W) E AS mj MOSFET dv/dt ruggedness dv/dt Peak diode recovery dv/dt V/ns Power Dissipation B T C =5 C 3 7 W P D Derate above 5 C.. W/ C Junction and Storage Temperature Range T J, T STG 55 to 5 C Maximum lead temperature for soldering purpose, /8" from case for 5 seconds 3 C Thermal Characteristics Parameter Maximum JunctiontoAmbient A,D T L Symbol AOT38A6L R qja 65 AOTF38A6L 6 AOTF38A6L Maximum Casetosink A R qcs.5 C/W Maximum JunctiontoCase R qjc.95 4.6 C/W * Drain current limited by maximum junction temperature. ± 65 Units V V Units C/W Rev..: June 8 www.aosmd.com Page of 6
AOTF38A6L/AOT38A6L Electrical Characteristics (T J =5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource Breakdown Voltage I D =5μA, V GS =V, T J =5 C 6 I D =5μA, V GS =V, T J =5 C 7 V BV DSS Breakdown Voltage Temperature / TJ Coefficient I D =5μA, V GS =V.44 V/ o C I DSS Zero Gate Voltage Drain Current V DS =6V, V GS =V V DS =48V, T J =5 C ma I GSS GateBody leakage current V DS =V, V GS =±V ± na V GS(th) Gate Threshold Voltage V DS =5V, I D =5mA.6 3. 3.8 V R DS(ON) g FS V SD I S I SM C iss C oss C o(er) C o(tr) C rss R g Q g Q gs Q gd t D(on) t r t D(off) t f t rr I rm Q rr Static DrainSource OnResistance Forward Transconductance Diode Forward Voltage Maximum BodyDiode Continuous Current Maximum BodyDiode Pulsed Current C DYNAMIC PARAMETERS Input Capacitance Output Capacitance Effective output capacitance, energy related H Effective output capacitance, time related I Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge TurnOn DelayTime TurnOn Rise Time TurnOff DelayTime TurnOff Fall Time Body Diode Reverse Recovery Time V GS =V, I D =5.5A V DS =V, I D =5.5A I S =5.5A,V GS =V V GS =V, V DS =V, f=mhz V GS =V, V DS = to 48V, f=mhz V GS =V, V DS =V, f=mhz f=mhz V GS =V, V DS =48V, I D =5.5A V GS =V, V DS =4V, I D =5.5A, R G =5W Peak Reverse Recovery Current I F =5.5A, di/dt=a/ms, V DS =4V Body Diode Reverse Recovery Charge.33.38 Ω S.85. V A 44 A 955 pf 9 pf 3 pf pf.4 pf 4.8 Ω nc 4.6 nc 6.6 nc ns 3 ns 43 ns 6 ns 5 ns 9 A 3. mc A. The value of R qja is measured with the device in a still air environment with T A =5 C. B. The power dissipation P D is based on T J(MAX) =5 C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =5 C, Ratings are based on low frequency and duty cycles to keep initial T J =5 C. D. The R qja is the sum of the thermal impedance from junction to case R qjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using <3ms pulses, duty cycle.5% max. F. These curves are based on the junctiontocase thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =5 C. The SOA curve provides a single pulse rating. G. This is the absoluted maximum rating. Parts are % tested at T J =5 C, L=6mH, I AS =A, V DD =5V, R G =5Ω. H. C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from to 8% V (BR)DSS. I. C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V (BR)DSS. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev..: June 8 www.aosmd.com Page of 6
BV DSS (Normalized) I S (A) R DS(ON) (W) Normalized OnResistance I D (A) I D (A) AOTF38A6L/AOT38A6L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V 8V V DS =V 5 5 6.5V 6V 5.5V 7V 5 C 5 C 55 C V GS =5V 3 6 9 5 Figure : OnRegion Characteristics. 4 6 8 3 V GS (Volts) Figure : Transfer Characteristics.8.5.6 V GS =V V GS =V I D =5.5A.5.4..5 3 6 9 5.3 I D (A) Figure 3: OnResistance vs. Drain Current and Gate Voltage E 5 5 5 Temperature ( C) Figure 4: OnResistance vs. Junction Temperature. E. E.9 E E 5 C 5 C.8 E3.7 5 5 5 T J ( C) Figure 5: Break Down vs. Junction Temparature E4...4.6.8. V SD (Volts) Figure 6: BodyDiode Characteristics Rev..: June 8 www.aosmd.com Page 3 of 6
I D (Amps) I D (Amps) Eoss (uj) Current rating I D (A) V GS (Volts) Capacitance (pf) AOTF38A6L/AOT38A6L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V DS =48V I D =5.5A C iss 9 C oss 6 3 C rss 5 5 5 3 Q g (nc) Figure 7: GateCharge Characteristics 3 4 5 6 Figure 8: Capacitance Characteristics 8 6 8 E oss 6 4 4 3 4 5 6 5 5 75 5 5 Figure 9: Coss stored Energy T CASE ( C) Figure : Current Derating (Note F). R DS(ON) limited T J(Max) =5 C T C =5 C DC ms ms ms ms. Figure : Maximum Forward Biased Safe Operating Area for AOTF38A6L (Note F) s. R DS(ON) limited T J(Max) =5 C T C =5 C ms ms ms. DC ms Figure : Maximum Forward Biased Safe Operating Area for AOT38A6L (Note F) Rev..: June 8 www.aosmd.com Page 4 of 6
Z qjc Normalized Transient Thermal Resistance Z qjc Normalized Transient Thermal Resistance AOTF38A6L/AOT38A6L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS D=T on /T T J,PK =T C P DM.Z qjc.r qjc R qjc =4.6 C/W In descending order D=.5,.3,.,.5,.,., single pulse. P DM. Single Pulse T on T. E5.... Pulse Width (s) Figure 3: Normalized Maximum Transient Thermal Impedance for AOTF38A6L (Note F) D=T on /T T J,PK =T C P DM.Z qjc.r qjc R qjc =.95 C/W In descending order D=.5,.3,.,.5,.,., single pulse. P DM. Single Pulse T on T. E5.... Pulse Width (s) Figure 4: Normalized Maximum Transient Thermal Impedance for AOT38A6L (Note F) Rev..: June 8 www.aosmd.com Page 5 of 6
AOTF38A6L/AOT38A6L Gate Charge Test Circuit & Waveform Qg V Qgs Qgd Ig RL Resistive Switching Test Circuit & Waveforms Charge Rg 9% % td(on) t r t d(off) t f t on t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L E = / LI AR AR BV DSS Rg Id Id I AR Diode Recovery Test Circuit & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev..: June 8 www.aosmd.com Page 6 of 6