Product description The BFP8ESD is a high performance RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for. -. GHz LNA applications. Feature list Unique combination of high end RF performance and robustness: dbm maximum RF input power, kv HBM ESD hardness High transition frequency f T = 7 GHz to enable best in class noise performance at high frequencies: NF min =. db at. GHz,. V, ma High gain G ma = 7. db at. GHz,. V, ma OIP =. dbm at. GHz,. V, ma Suitable for low voltage applications e.g. V CC =. V and.8 V (.8 V,. V,. V require corresponding collector resistor) Product validation Qualified for industrial applications according to the relevant tests of JEDEC7//. Potential applications Wireless communications: WLAN, WiMAX and Bluetooth Satellite communication systems: GNSS navigation systems (GPS, GLONASS, BeiDou, Galileo), satellite radio (SDARs, DAB) and C-band LNB (st and nd stage LNA) Multimedia applications such as mobile/portable TV, mobile TV and FM radio G/G UMTS/LTE mobile phone applications ISM applications like RKE, AMR and Zigbee Device information Table Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFP8ESD / BFP8ESDH7XTSA SOT = B = E = C = E T9s Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document v. www.infineon.com
Table of contents Table of contents Product description.................................................................... Feature list............................................................................. Product validation..................................................................... Potential applications.................................................................. Device information..................................................................... Table of contents....................................................................... Absolute maximum ratings.............................................................. Thermal characteristics.................................................................................................................................. DC characteristics........................................................................ General AC characteristics................................................................. Frequency dependent AC characteristics.................................................... Characteristic DC diagrams............................................................... 9. Characteristic AC diagrams.............................................................. Package information SOT...........................................................9 Revision history....................................................................... Disclaimer............................................................................ Datasheet v.
Absolute maximum ratings Absolute maximum ratings Table Absolute maximum ratings at T A = C (unless otherwise specified) Min. Max. Collector emitter voltage V CEO. V Open base.9 T A = - C, open base Collector emitter voltage ) V CES. E-B short circuited.9 T A = - C, E-B short circuited Collector base voltage ) V CBO. Open emitter Base current I B - ma Collector current I C RF input power P RFin dbm. T A = - C, open emitter ESD stress pulse V ESD - kv HBM, all pins, acc. to JESD-A Total power dissipation ) P tot mw T S C Junction temperature T J C Storage temperature T Stg - Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. V CES is similar to V CEO due to design. V CBO is similar to V CEO due to design. T S is the soldering point temperature. T S is measured on the emitter lead at the soldering point of the PCB. Datasheet v.
Thermal characteristics Thermal characteristics Table Thermal resistance Min. Typ. Max. Junction - soldering point R thjs K/W P tot [mw] 8 7 T S [ C] Figure Total power dissipation P tot = f(t S ) Datasheet v.
. DC characteristics Table DC characteristics at T A = C Min. Typ. Max. Collector emitter breakdown voltage V (BR)CEO..7 V I C = ma, I B =, open base Collector emitter leakage current I CES ) na V CE = V, V BE =, E-B short circuited Collector base leakage current I CBO ) V CB = V, I E =, open emitter Emitter base leakage current I EBO ) μa V EB =. V, I C =, open collector DC current gain h FE V CE =. V, I C = ma, pulse measured. General AC characteristics Table General AC characteristics at T A = C Min. Typ. Max. Transition frequency f T 7 GHz V CE =. V, I C = ma, f = GHz Collector base capacitance C CB ff V CB = V, V BE =, f = MHz, emitter grounded Collector emitter capacitance C CE. pf V CE = V, V BE =, f = MHz, base grounded Emitter base capacitance C EB. V EB =. V, V CB =, f = MHz, collector grounded Maximum values not limited by the device but by the short cycle time of the % test. Datasheet v.
. Frequency dependent AC characteristics Measurement setup is a test fixture with Bias-T s in a Ω system, T A = C. Top View VC E C Bias-T OUT VB IN Bias-T B (Pin ) E Figure Testing circuit Table AC characteristics, V CE =. V, f = MHz Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity rd order intercept point at output db gain compression point at output Table 7 G ms S Min. Typ. Max. 9. NF min. G ass OIP OP db. AC characteristics, V CE =. V, f = 9 MHz db dbm I C = ma I C = ma Z S = Z L = Ω, I C = ma Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity rd order intercept point at output db gain compression point at output G ms S Min. Typ. Max. 9 NF min. G ass OIP. OP db 7 db dbm I C = ma I C = ma Z S = Z L = Ω, I C = ma Datasheet v.
Table 8 AC characteristics, V CE =. V, f =. GHz Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity rd order intercept point at output db gain compression point at output Table 9 G ms S Min. Typ. Max.. NF min. G ass OIP. OP db 7. AC characteristics, V CE =. V, f =.9 GHz db dbm I C = ma I C = ma Z S = Z L = Ω, I C = ma Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity rd order intercept point at output db gain compression point at output Table G ms S Min. Typ. Max.. NF min. G ass 9. OIP. OP db 8 AC characteristics, V CE =. V, f =. GHz db dbm I C = ma I C = ma Z S = Z L = Ω, I C = ma Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity rd order intercept point at output db gain compression point at output G ms S Min. Typ. Max. 9 NF min. G ass 8 OIP OP db 8 db dbm I C = ma I C = ma Z S = Z L = Ω, I C = ma Datasheet 7 v.
Table AC characteristics, V CE =. V, f =. GHz Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity rd order intercept point at output db gain compression point at output Table G ma S Min. Typ. Max. 7. NF min. G ass OIP. OP db 8. AC characteristics, V CE =. V, f =. GHz db dbm I C = ma I C = ma Z S = Z L = Ω, I C = ma Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity rd order intercept point at output db gain compression point at output G ma S Min. Typ. Max... NF min.8 G ass. OIP OP db 8 db dbm I C = ma I C = ma Z S = Z L = Ω, I C = ma Note: G ms = IS / S I for k < ; G ma = IS / S I(k-(k -) / ) for k >. In order to get the NF min values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP value depends on termination of all intermodulation frequency components. Termination used for this measurement is Ω from. MHz to GHz. Datasheet 8 v.
. Characteristic DC diagrams I C [ma] 8 8 7µA µa µa µa µa µa µa µa.... V [V] CE Figure Collector current vs. collector emitter voltage I C = f(v CE ), I B = parameter h FE I C [ma] Figure DC current gain h FE = f(i C ), V CE =. V Datasheet 9 v.
I C [ma]...7.8.9 V [V] BE Figure Collector current vs. base emitter forward voltage I C = f(v BE ), V CE =. V I B [ma] 7...7.8.9 V [V] BE Figure Base current vs. base emitter forward voltage I B = f(v BE ), V CE =. V Datasheet v.
I B [A] 7 8 9...7.8 V [V] EB Figure 7 Base current vs. base emitter reverse voltage I B = f(v EB ), V CE =. V Datasheet v.
. Characteristic AC diagrams f T [GHz].V.V.V.V.V.V I C [ma] Figure 8 Transition frequency f T = f(i C ), f = GHz, V CE = parameter.8.8.7 C CB [pf].7...... V [V] CB Figure 9 Collector base capacitance C CB = f(v CB ), f = MHz Datasheet v.
7 Gms G [db] 8 9 Gma S 7 8 9 f [GHz] Figure Gain G ma, G ms, IS I = f(f), V CE =. V, I C = ma G max [db] 7 8 9.GHz.9GHz.GHz.9GHz.GHz.GHz.GHz I [ma] C Figure Maximum power gain G max = f(i C ), V CE =. V, f = parameter Datasheet v.
G max [db] 7 8 9.GHz.9GHz.GHz.9GHz.GHz.GHz.GHz.... V [V] CE Figure Maximum power gain G max = f(v CE ), I C = ma, f = parameter OIP [dbm] 8 8 8 V, MHz V, MHz.V, MHz.V, MHz I C [ma] Figure rd order intercept point at output OIP = f(i C ), Z S = Z L = Ω, V CE, f = parameter Datasheet v.
8 7 7 I C [ma] 7 7 7 8 8 9.. V CE [V] 8 9 Figure Compression point at output OP db [dbm] = f(i C, V CE ), Z S = Z L = Ω, f =. GHz I C [ma] 7 8 9 7 8 9 7 7 7 8 9 88 99 7 8 9.. V CE [V] Figure rd order intercept point at output OIP [dbm] = f(i C, V CE ), Z S = Z L = Ω, f =. GHz Datasheet v.
...... to GHz........ 9. 7.... 7.. 9............... ma ma Figure Input reflection coefficient S = f(f), V CE =. V, I C = / ma....... 9.. to GHz 8......... 7............. ma ma Figure 7 Output reflection coefficient S = f(f), V CE =. V, I C = / ma Datasheet v.
...........9......9.......9...9....... ma ma ma Figure 8 Source impedance for minimum noise figure Z S,opt = f(f), V CE =. V, I C = / / ma.. ma ma ma NF min [db].8... 7 f [GHz] Figure 9 Noise figure NF min = f(f), V CE =. V, Z S = Z S,opt, I C = / / ma Datasheet 7 v.
. NF min [db]..8..ghz.ghz.ghz.9ghz.. 8 8 I [ma] C Figure Noise figure NF min = f(i C ), V CE =. V, Z S = Z S,opt, f = parameter NF [db].8....8....ghz.ghz.ghz.9ghz 8 8 I [ma] C Figure Note: Noise figure NF = f(i C ), V CE =. V, Z S = Ω, f = parameter The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. T A = C. Datasheet 8 v.
Package information SOT +..-. A.±..9±.. MAX.. MIN... A.±. +..-. +..-. ±.... x 8 BFP8ESD Package information SOT. MOLD FLASH, PROTRUSION OR GATE BURRS OF. MM MAXIMUM PER SIDE ARE NOT INCLUDED ALL DIMENSIONS ARE IN UNITS MM THE DRAWING IS IN COMPLIANCE WITH ISO 8 & PROJECTION METHOD [ ] Figure Package outline Figure Foot print TYPE CODE MONTH NOTE OF MANUFACTURER YEAR Figure Marking layout example.. PIN INDEX MARKING.. ALL DIMENSIONS ARE IN UNITS MM THE DRAWING IS IN COMPLIANCE WITH ISO 8 & PROJECTION METHOD [ ] Figure Tape dimensions Datasheet 9 v.
Revision history Revision history Document version Date of release Description of changes. New datasheet layout. Datasheet v.
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