QPF41 26 3 GHz 1W GaN Front End Module Product Description The QPF41 is a multi-function Gallium Nitride MMIC front - end module targeted for 28 GHz phased array G base stations and terminals. Fabricated on Qorvo s.1um GaN on SiC process, the device combines a low noise high linearity LNA, a low insertion-loss high - isolation TR switch, and a high - gain high - efficiency multi-stage PA. The QPF41 operates from 26 GHz to 3 GHz. The receive path (LNA + TR SW) is designed to provide 17 db of gain and a typical noise figure of 3.dB. The transmit path (PA + SW) provides 27 db of small signal gain with high linearity of 3 dbc ACPR and low EVM of 3% at 23 dbm average output power, while supporting peak power of 1 - Watt. The compact x 4 mm air-cavity laminate surface mount package with embedded copper heat slug employs a low thermal resistance die attached process, this makes QPF41 ideal for phased array applications with tight lattice spacing and extreme temperature requirements. Functional Block Diagram Product Features Frequency Range: 26 3 GHz 1 RX Noise Figure: 3. db RX Small Signal Gain: 17 db RX Saturated Power: 17 dbm RX TOI: 21 dbm @ - 4 dbm Pin / tone TX Small Signal Gain: 27 db TX Saturated Power (CW): 31 dbm TX TOI: 39 dbm @ -6 dbm Pin / tone TX ACPR: 3dBc @ 23 dbm average Pout TX Linearity: 3 % EVM @ 23 dbm average Pout 2 TX PAE: 8 % @ 23 dbm average Pout 2 Package Dimensions:. x 4. x 1.8 mm 1. Performance is typical at room temperature 2. OFDM, 4 MHz modulation bandwidth, 26 QAM Applications G Wireless Base Stations and Terminals Point to Point Communications Part No. Description QPF41S2 Sample Bag, Qty 2 QPF41SR Tape and Reel, Qty 1 QPF41EVBV1 QPF41 Evaluation Board Data Sheet Rev. B, Nov 6, 2 Subject to change without notice - 1 of 21 - www.qorvo.com
Normal Operating Conditions Parameter Drain Voltage (TXVD, TXVD3, RXVD) 1, 4 Drain Current (TXIDQ / TXIDQ3) Drain Current (RXIDQ) 3 Gate Voltage (TXVG / TXVG3) 2 Gate Voltage (RXVG) 2 QPF41 26 3 GHz 1W GaN Front End Module Value 2 V (RXVD should be on during RX - and TX - operation) 68 ma / 2 ma 1 ma 2 V / -2. V - 2.2 V Control Voltage (SW) for TX on, RX off 3, 4 SW = V (RXVD = 2 V) Control Voltage (SW) for TX off, RX on 3, 4 SW = 2 V (should be the same as RXVD if RXVD is not 2 V) Operating Temperature Range 4 to 9 C 1 Electrical specifications are measured at specified test conditions, no guarantee over all recommended operating conditions. 2 Gate voltages shown are typical, can be adjusted to set required drain current. 3 When in TX mode, the drain of receive channel is turned off by an internal switch. 4 The RXVD should be on during RX- and TX- operation. SW high - level should use the same voltage as RXVD. Electrical Specifications RX Test conditions, unless otherwise noted: VD = 2 V, IDQ = 1 ma, SW = 2 V, RXVD = 2 V Data de-embedded to device reference planes, 2 C Parameter Min Typical Max Units Frequency 26 3 GHz Small Signal Gain 17 db Noise Figure 3. db Saturated Output Power 17 dbm Input Return Loss 11 db Output Return Loss 11 db Output TOI, @ -4 dbm Pin / tone, 1 MHz tone spacing 21 dbm Gain Temperature Coefficient.3 db/ C Electrical Specifications TX Test conditions unless otherwise noted: VD = 2 V, TXIDQ / TXIDQ3 = 68 ma / 2 ma, SW = V, RXVD = 2 V Data de-embedded to device reference planes, 2 C Parameter Min Typical Max Units Frequency 26 3 GHz Small Signal Gain 27 db Saturated Output Power, CW 31 dbm Input Return Loss 1 db Output Return Loss db Output TOI, @ -6 dbm Pin / tone, 1 MHz tone spacing 39 dbm ACPR (23 dbm average power, OFDM, 4 MHz, 26 QAM) -3 dbc EVM (23 dbm average power, OFDM, 4 MHz, 26 QAM) 3 % PAE (23 dbm average power, OFDM, 4 MHz, 26 QAM) 8 % Gain Temperature Coefficient.64 db/ C Data Sheet Rev. B, Nov 6, 2 Subject to change without notice - 2 of 21 - www.qorvo.com
S (db) S22 (db) S11 (db) Gain (db) Performance Plots, Small Signal, Receive Path Test Conditions unless otherwise stated: RXVD = 2 V, RXIDQ = 1 ma, SW = 2 V, 2 C QPF41 26 3 GHz 1W GaN Front End Module - Input Return Loss vs Temp - 4 C + 2 C + 9 C 24 22 Gain vs Temp - 4 C + 2 C + 9 C -1-1 -2-2 -3 2 1-3 Reverse Isolation vs Temp - 4 C + 2 C + 9 C Output Return Loss vs Temp - 4 C + 2 C + 9 C -3 - -4-1 -4-1 - -2 - -2-6 -3 Data Sheet Rev. B, Nov 6, 2 Subject to change without notice - 3 of 21 - www.qorvo.com
S22 (db) S22 (db) S11 (db) S11 (db) Gain (db) Gain (db) Performance Plots, Small Signal, Receive Path Test Conditions unless otherwise stated: RXVD = 2 V, RXIDQ = 1 ma, SW = 2 V, 2 C QPF41 26 3 GHz 1W GaN Front End Module 24 22 Gain vs Voltage V 2 V 22 V 24 22 Gain vs Current 1 ma 1 ma 2 ma 2 2 1 1 Input Return Loss vs Voltage V 2 V 22 V Input Return Loss vs Current 1 ma 1 ma 2 ma - - -1-1 -1-1 -2-2 -2-2 -3-3 Output Return Loss vs Voltage V 2 V 22 V Output Return Loss vs Current 1 ma 1 ma 2 ma - - -1-1 -1-1 -2-2 -2-2 -3-3 Data Sheet Rev. B, Nov 6, 2 Subject to change without notice - 4 of 21 - www.qorvo.com
NF (db) NF (db) NF (db) Performance Plots, Noise Figure, Receive Path Test Conditions unless otherwise stated: RXVD = 2 V, RXIDQ = 1 ma, SW = 2 V, 2 C QPF41 26 3 GHz 1W GaN Front End Module 8 Noise Figure vs Temp 7 6 4 3 2 1-4 C + 2 C + 9 C 8 Noise Figure vs Voltage 8 Noise Figure vs Current 7 7 6 6 4 4 3 3 2 2 1 V 2 V 22 V 1 1 ma 1 ma 2 ma Data Sheet Rev. B, Nov 6, 2 Subject to change without notice - of 21 - www.qorvo.com
Psat (dbm) Psat (dbm) Psat (dbm) P1dB (dbm) Performance Plots, Large Signal, Receive Path Test Conditions unless otherwise stated: RXVD = 2 V, RXIDQ = 1 ma, SW = 2 V, CW, 2 C QPF41 26 3 GHz 1W GaN Front End Module 2 Psat vs Temperature P1dB vs Temperature 1 8 6-4 C + 2 C + 9 C 1 4 2-4 C + 2 C + 9 C 2 Psat vs Voltage 2 Psat vs Current V 2 V 22 V 1 1 ma 1 ma 2 ma 1 Data Sheet Rev. B, Nov 6, 2 Subject to change without notice - 6 of 21 - www.qorvo.com
Power Gain (dbm) Drain Current (ma) Performance Plots, Large Signal, Receive Path Test Conditions unless otherwise stated: RXVD = 2 V, RXIDQ = 1 ma, SW = 2 V, CW, 2 C QPF41 26 3 GHz 1W GaN Front End Module 2 Pout vs Pin 2 Pout vs Pin vs Temp 1 1 1 1 Freq = 28. GHz -1-1 - 1 Pin (dbm) - 4 C + 2 C + 9 C -1-1 - 1 Pin (dbm) 2 Power Gain vs Pin 4 Drain Current vs Pin 3 1 3 2 1 2 1 1-1 -1-1 Pin (dbm) -1-1 - 1 Pin (dbm) Data Sheet Rev. B, Nov 6, 2 Subject to change without notice - 7 of 21 - www.qorvo.com
IMD3 (dbc) IMD (dbc) OTOI (dbm) OTOI (dbm) QPF41 26 3 GHz 1W GaN Front End Module Performance Plots, Linearity, Receive Path Test Conditions unless otherwise stated: RXVD = 2 V, RXIDQ = 1 ma, SW = 2 V, Tone spacing: 1 MHz, 2 C 2 OTOI vs Voltage 2 OTOI vs Current 24 24 23 23 22 22 21 21 2 2 19 19 17 Pin = - 4 dbm / tone 17 Pin = - 4 dbm / tone V 2 V 22 V 1 1 ma 1 ma 2 ma 1-1 IMD3 vs Pout -1-2 IMD vs Pout -2-3 -4-3 -4 - -6-7 - 2 4 6 8 1 Pout / tone (dbm) -8 2 4 6 8 1 Pout / tone (dbm) Data Sheet Rev. B, Nov 6, 2 Subject to change without notice - 8 of 21 - www.qorvo.com
S (db) S22 (db) S11 (db) Gain (db) Performance Plots, Small Signal, Transmit Path Test Conditions unless otherwise stated: TXVD = 2 V, TXVD3 = 2 V, TXIDQ = 68 ma, TXIDQ3 = 2 ma, SW = V, RXVD = 2 V, 2 C QPF41 26 3 GHz 1W GaN Front End Module Input Return Loss vs Temp 3 Gain vs Temp - 3-1 -1-2 -2-4 C + 2 C + 9 C -3 2 2 1-4 C + 2 C + 9 C 1-4 Reverse Isolation vs Temp Output Return Loss vs Temp -4 - - - -1-6 -1-6 -7-7 - 4 C + 2 C + 9 C -8-2 -2-4 C + 2 C + 9 C -3 Data Sheet Rev. B, Nov 6, 2 Subject to change without notice - 9 of 21 - www.qorvo.com
S22 (db) S22 (db) S11 (db) S11 (db) Gain (db) Gain (db) Performance Plots, Small Signal, Transmit Path Test Conditions unless otherwise stated: TXVD = 2 V, TXVD3 = 2 V, TXIDQ = 68 ma, TXIDQ3 = 2 ma, SW = V, RXVD = 2 V, 2 C QPF41 26 3 GHz 1W GaN Front End Module 32 Gain vs Voltage 32 Gain vs Current 3 3 28 28 26 26 24 24 22 22 2 2 + V + 2 V + 22 V 1 68 ma / 1 ma 68 ma / 2 ma 68 ma / 2 ma 4 ma / 1 ma 4 ma / 2 ma 1 Input Return Loss vs Voltage Input Return Loss vs Current - - -1-1 -1-1 -2-2 -2 + V + 2 V + 22 V -3-2 68 ma / 1 ma 68 ma / 2 ma 68 ma / 2 ma 4mA / 1 ma 4 ma / 2 ma -3 Output Return Loss vs Voltage Output Return Loss vs Current - - -1-1 -1-1 -2-2 -2 + V + 2 V + 22 V -3-2 68 ma / 1 ma 68 ma / 2 ma 68 ma / 2 ma 4 ma / 1 ma 4 ma / 2 ma -3 Data Sheet Rev. B, Nov 6, 2 Subject to change without notice - 1 of 21 - www.qorvo.com
Psat (dbm) P1dB (dbm) Psat (dbm) P1dB (dbm) Psat (dbm) P1dB (dbm) Performance Plots, Large Signal, Transmit Path Test Conditions unless otherwise stated: TXVD = 2 V, TXVD3 = 2 V, TXIDQ = 68 ma, TXIDQ3 = 2 ma, SW = V, RXVD = 2 V, 2 C QPF41 26 3 GHz 1W GaN Front End Module 33 Psat vs Temperature 3 P1dB vs Temperature 32 28 31 26 3 24 29 22 28-4 C + 2 C + 9 C 27 2-4 C + 2 C + 9 C 33 Psat vs Voltage 3 P1dB vs Voltage 32 28 31 26 3 24 29 22 28 V 2 V 22 V 2 V 2 V 22 V 27 33 Psat vs Current 3 P1dB vs Current 32 28 31 26 3 24 29 22 28 68 ma/ 1 ma 68 ma / 2 ma 68 ma / 2 ma 2 68 ma/ 1 ma 68 ma / 2 ma 68 ma/ 2 ma 4 ma / 1 ma 4 ma / 2 ma 27 4 ma / 1 ma 4 ma / 2 ma Data Sheet Rev. B, Nov 6, 2 Subject to change without notice - 11 of 21 - www.qorvo.com
Power Gain (dbm) Drain Current (ma) Performance Plots, Large Signal, Transmit Path Test Conditions unless otherwise stated: TXVD = 2 V, TXVD3 = 2 V, TXIDQ = 68 ma, TXIDQ3 = 2 ma, SW = V, RXVD = 2 V, 2 C QPF41 26 3 GHz 1W GaN Front End Module 3 Pout vs Pin 3 Pout vs Pin vs Temp 3 3 2 2 2 2 1 1 Freq = 28. GHz 1-1 - 1 1 Pin (dbm) - 4 C + 2 C + 9 C 1-1 - 1 1 Pin (dbm) 3 Power Gain vs Pin 4 Drain Current vs Pin 3 2 2 1 1-1 - 1 1 Pin (dbm) 3 2 2 1 1-1 - 1 1 Pin (dbm) Data Sheet Rev. B, Nov 6, 2 Subject to change without notice - of 21 - www.qorvo.com
Amplitude Deviation (db) Phase Deviation (Degree) IMD3 (dbc) IMD (dbc) OTOI (dbm) OTOI (dbm) Performance Plots, Linearity, Transmit Path QPF41 26 3 GHz 1W GaN Front End Module Test Conditions unless otherwise stated: TXVD = 2 V, TXVD3 = 2 V, TXIDQ = 68 ma, TXIDQ3 = 2 ma, SW = V, RXVD = 2 V, Tone Spacing = 1 MHz, 2 C 43 42 41 4 39 OTOI vs Voltage 48 46 44 42 Pin = - 6 dbm / tone OTOI vs Current 38 4 37 36 3 Pin = - 6 dbm / tone 34 V 2 V 22 V 33 38 36 34 68 ma / 1 ma 68 ma / 2 ma 4 ma / 2 ma 4 ma / 1 ma 32-1 IMD3 vs Pout -1-2 IMD vs Pout -2-3 -4-1 2 22 24 26 28 Pout / tone (dbm) -3-4 - -6-7 -8 1 2 22 24 26 28 Pout / tone (dbm) 2 AM - AM vs Pout 3 AM - PM vs Pout 1 2 2 1 1 1-2 22 24 26 28 3 32-2 22 24 26 28 3 32 Data Sheet Rev. B, Nov 6, 2 Subject to change without notice - 13 of 21 - www.qorvo.com
PAE (%) PAE (%) ACPR (dbc) ACPR (dbc) ACPR (dbc) ACPR (dbc) Performance Plots, Modulated Signal, Transmit Path Test Conditions unless otherwise stated: Source signal: 4 MHz OFDM, 26 QAM TXVD = 2 V, TXVD3 = 2 V, TXIDQ = 68 ma, TXIDQ3 = 2 ma, SW = V, RXVD = 2 V, 2 C QPF41 26 3 GHz 1W GaN Front End Module -2 ACPR vs Pout -2 ACPR vs Pout vs Temp - 4 C + 2 C + 9 C -2-2 Freq = 28. GHz -3-3 -3-3 -4-4 -4 1 2 22 24 26 28-4 1 2 22 24 26 28-2 -2 ACPR vs Pout vs Voltage V 2 V 22 V Freq = 28. GHz -2-2 ACPR vs Pout vs Current 68 / 1 ma 68 / 2 ma 68 / 2 ma 4 / 1 ma 4 / 2 ma Freq = 28. GHz -3-3 -3-3 -4-4 -4 1 2 22 24 26 28-4 1 2 22 24 26 28 3 PAE vs Pout 3 PAE vs Pout vs Temp - 4 C + 2 C + 9 C 2 2 Freq: 28. GHz 2 2 1 1 1 1 1 2 22 24 26 28 1 2 22 24 26 28 Data Sheet Rev. B, Nov 6, 2 Subject to change without notice - of 21 - www.qorvo.com
PAR (db) PAR (db) EVM (%) EVM (%) EVM (%) EVM (%) Performance Plots, Modulated Signal, Transmit Path Test Conditions unless otherwise stated: Signal source: 4 MHz OFDM, 26 QAM TXVD = 2 V, TXVD3 = 2 V, TXIDQ = 68 ma, TXIDQ3 = 2 ma, SW = V, RXVD = 2 V, 2 C QPF41 26 3 GHz 1W GaN Front End Module 8 7 6 EVM vs Pout vs Frequency 8 7 6 EVM vs Pout vs Temp - 4 C + 2 C + 9 C Freq: 28. GHz 4 4 3 3 2 2 1 1 1 2 22 24 26 28 1 2 22 24 26 28 8 7 6 EVM vs Pout vs VD V 2 V 22 V Freq = 28. GHz 8 7 6 EVM vs Pout vs Current 68 / 1 ma 68 / 2 ma 68 / 2 ma 4 / 1 ma 4 / 2 ma Freq = 28. GHz 4 4 3 3 2 2 1 1 1 2 22 24 26 28 1 2 22 24 26 28 PAR vs Pout vs Freq PAR vs Pout vs Temp - 4 C + 2 C + 9 C 1 1 8 6 4 2 PAR above.1 % of Signal Level 1 2 22 24 26 28 8 6 4 2 PAR above.1 % of Signal Level, Freq = 28. GHz 1 2 22 24 26 28 Data Sheet Rev. B, Nov 6, 2 Subject to change without notice - 1 of 21 - www.qorvo.com
QPF41 26 3 GHz 1W GaN Front End Module Mechanical Drawings & Pad Descriptions Dimensions in mm. Package lead finish: Ni / Au plating with minimum gold thickness of.1 um Part Marking: QPF41: Part Number, YY = Part Assembly Year, WW = Part Assembly Week, MXXX = Batch ID Pin Number Label Description 1, 3,,,, slug GND GROUND 2 ANT Antenna 4 SW Switch control (internally connected to Pin 24) 1 RXVD Receive VD 11 RXVG Receive VG 13 RXOUT Receive output 1 TXIN Transmit input 19 TXVG Transmit gate control, stages 1 and 2 2 TXVG3 Transmit gate control, stage 3 21 TXVD Transmit VD, stages 1 and 2 22 TXVD3 Transmit VD, stage 3 24 SW Switch control (internal connection to Pin 4), 6, 7, 8, 9, 17,, 23 N/C No internal connection Data Sheet Rev. B, Nov 6, 2 Subject to change without notice - of 21 - www.qorvo.com
Evaluation Board and Assembly QPF41 26 3 GHz 1W GaN Front End Module RF Layer is.8 thick Rogers Corp. RO43C (εr = 3.3). Metal layers are. oz. copper. The microstrip line at the connector interface is optimized for the Southwest Microwave end launch connector 192-1A-. Ref. Des. Component Value Manuf. Remark C2, C4, C7, C1, C11, C13 SMT Cap. CAP, 42 1 pf, 1% V 42 X7R ROHS Various Red C1, C3, C, C8, C, C1 SMT Cap. CAP, 6 1. uf, 1% V X7R ROHS Various Grey R2, R4, R7, R1 - R13, R1 SMT Res. RES, 42.1 ohm, % V, ROHS Various Blue R1, R3, R, R6, R8, R9, R SMT Res. RES, 42 ohm, %, ROHS Various Pink Data Sheet Rev. B, Nov 6, 2 Subject to change without notice - 17 of 21 - www.qorvo.com
QPF41 26 3 GHz 1W GaN Front End Module Application Circuit Bias-up Procedure 1. Set drain supply TXVD limit to 6 ma, RXVD limit to ma, gate and control supply limit to 1 ma each. Bias-down Procedure 1. Turn off RF signal 2. Set TXVG, TXVG3, RXVG to V 2. Set TXVG, TXVG3 and RXVG to V 3. Set SW = V (or = RXVD) for TX (RX) operation 3. Set all drain supply to V (RXVD should be on during RX and TX - operation) 4. Set TXVD, TXVD3, RXVD = +2 V 4. Turn off drain supply. For TX, adjust TXVG to get TXID current, adjust. Turn off SW TXVG3 to achieve TXID3 current; For RX, adjust RXVG to achieve required drain current 6. Turn off gate supply 6. Apply RF signal Data Sheet Rev. B, Nov 6, 2 Subject to change without notice - of 21 - www.qorvo.com
QPF41 26 3 GHz 1W GaN Front End Module Thermal Information Parameter Values Units Conditions Average Power, Thermal Resistance (θjc) (1) 1. C/W TX on, RX off, TXVD = +2 V, TXIDQ = 88 ma CW RF Pout = 23 dbm, TBASE = 8 C Channel Temperature (TCH) 4. C PDISS = 2.61 W, ID_DRIVE =. A (total) Peak Power, Thermal Resistance (θjc) (1) 11.9 C/W TX on, RX off, TXVD = +2 V, TXIDQ = 88 ma CW RF Pout = 3 dbm, TBASE = 8 C Channel Temperature (TCH) 139.36 C PDISS = 4.69 W, ID_Drive =.28 A (total) Thermal Resistance (θjc) (1) 8.27 C/W RX on, TX off, RXVD = +2 V, RXIDQ = 1 ma RF off or small signal, TBASE = 8 C Channel Temperature (TCH) 11.8 C PDISS =.3 W Notes: 1. Thermal resistance is measured to package backside 2. Base or ambient temperature is 8 C 3. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates Absolute Maximum Ratings Parameter Drain Voltage (TXVD, RXVD) Drain Current (TXID3+TXID) Drain Current (RXID) Gate Voltage (RXVG, TXVG3, TXVG) Gate Control Current (RXIG, TXIG3, TXIG) Switch Control Voltage (SW) Switch Control Current RX Input Power (RF port, 8 C) TX Input Power (RF port, 8 C) Value 28 V 8 ma 6 ma to V 2 ma to 28 V 2 ma 2 dbm 2 dbm Channel Temperature, TCH 22 C Mounting Temperature (3 seconds) 26 C Storage Temperature to 1 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Data Sheet Rev. B, Nov 6, 2 Subject to change without notice - 19 of 21 - www.qorvo.com
QPF41 26 3 GHz 1W GaN Front End Module Solderability 1. Compatible with the latest version of J-STD-2, Lead-free solder, 26 C. 2. The use of no-clean solder to avoid washing after soldering is recommended. Recommended Soldering Temperature Profile Data Sheet Rev. B, Nov 6, 2 Subject to change without notice - 2 of 21 - www.qorvo.com
QPF41 26 3 GHz 1W GaN Front End Module Handling Precautions Parameter Rating Standard ESD Human Body Model (HBM) B ESDA / JEDEC JS-1-2 ESD Charged Device Model (CDM) Cb ESDA / JEDEC JS-2-2 MSL Convection Reflow 26 C 3 JEDEC standard IPC/JEDEC J-STD-2 Caution! ESD-Sensitive Device RoHS Compliance This product is compliant with the 211/6/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment), as amended by Directive 21/863/EU. This product also has the following attributes: Lead Free Antimony Free TBBP-A (C1HBr42) Free PFOS Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Tel: 1-844-89-83 Web: www.qorvo.com Email: customer.support@qorvo.com For technical questions and application information: Email: appsupport@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 2 Qorvo, Inc. Qorvo is a registered trademark of Qorvo, Inc. Data Sheet Rev. B, Nov 6, 2 Subject to change without notice - 21 of 21 - www.qorvo.com