N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a, e Q g (Typ.). at V GS = V at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View Pin Top View FEATURES APPLICATIONS D 3 4 8 7 5 G Pin S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS V Gate-Source Voltage V GS ± Continuous Drain Current (T J = 75 C) T C = 7 C T A = 7 C Pulsed Drain Current I DM Avalanche Current Pulse I AS L =. mh Single Pulse Avalanche Energy E AS mj Continuous Source-Drain Diode Current Maximum Power Dissipation Notes: Based on. Surface mounted on " x " FR4 board. t = s. Maximum under steady state conditions is 9 C/W. Calculated based on maximum junction temperature. Package limitation current is A. I D a, e e b, c b, c I S a, e A b, c T C = 7 C P D 3. b, c T A = 7 C b, c Operating Junction and Storage Temperature Range T J, T stg - 55 to 75 C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient b, d t s R thja C/W Maximum Junction-to-Case Steady State R thjc A W
SPECIFICATIONS (T J = 5 C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS V GS = V, I D = 5 μa V V DS Temperature Coefficient V DS /T J 35 I D = 5 μa V GS(th) Temperature Coefficient V GS(th) /T J -.5 Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 5 μa V Gate-Source Leakage I GSS V DS = V, V GS = ± V ± na V Zero Gate Voltage Drain Current I DS = 3 V, V GS = V DSS V DS = 3 V, V GS = V, T J = 55 C On-State Drain Current a I D(on) V DS 5 V, V GS = V A V GS = V, I D = A Drain-Source On-State Resistance a. R DS(on) V GS = 4.5 V, I D = A Forward Transconductance a g fs V DS = V, I D = A S Dynamic b Input Capacitance C iss Output Capacitance C oss V DS= 3 V, V GS = V, f = MHz Reverse Transfer Capacitance C rss Total Gate Charge Q g V DS = 3 V, V GS = V, I D = A Gate-Source Charge Q gs V DS = 3 V, V GS = 4.5 V, I D = A Gate-Drain Charge Q gd Gate Resistance R g f = MHz.. Turn-On Delay Time t d(on) Rise Time t r V DD = 3 V, R L =.555 7 Turn-Off Delay Time t d(off) I D A, V GEN = V, R g = 5 Fall Time t f 5 Turn-On Delay Time t d(on) 5 3 Rise Time t r V DD = 3 V, R L =.5 Turn-Off Delay Time t d(off) I D A, V GEN = 4.5 V, R g = 5 3 Fall Time t f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S Pulse Diode Forward Current a I SM Body Diode Voltage V SD I S = A.8. V Body Diode Reverse Recovery Time Notes: a. Pulse test; pulse width 3 μs, duty cycle %. b. Guaranteed by design, not subject to production testing. t rr Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Body Diode Reverse Recovery Charge Q rr nc I F = A, di/dt = A/μs, T J = 5 C Reverse Recovery Fall Time t a ns Reverse Recovery Rise Time t b mv/ C μa pf nc ns A 7 ns
TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) V GS = thru V 3 ID - Drain Current (A) V GS = V ID - Drain Current (A) 8-55 C..5..5..5 V DS - Drain-to-Source Voltage (V) Output Characteristics.5..5..5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics (S) Transconductance - G f s V GS = 4.5 V T C = - 55 C V GS = V I D - Drain Current (A) I D - Drain Current (A) Transconductance R DS(on) vs. Drain Current On-Resistance (Ω) R DS(on) - Drain-to-Source I D = A C - Capacitance (pf) C iss C oss Gate-to-Source Voltage (V) 8 4 - V DS = 5 V V G S C rss 8 4 3 V DS - Drain-to-Source Voltage (V) Capacitance 5 Q g - Total Gate Charge (nc) Gate Charge 3
TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) V GS = V, I D = A R DS(on) - On-Resistance (Normalized). I S - Source Current (A).. T J = 5 C T J = 5 C. - 5-5 5 5 75 5 5 75 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature...4..8 V SD - Source-to-Drain Voltage (V) Forward Diode Voltage vs. Temperature. I D = A On-Resistance (Ω) R DS(on) -. (V) V GS(th ).... I D = 5 μa. 4 8 V GS - Gate-to-Source Voltage (V) R DS(on) vs. V GS vs. Temperature. - 5-5 5 5 75 5 5 75 T J - Temperature ( C) Threshold Voltage Limited by r DS(on)* I D - Drain Current (A). μs μs ms ms ms s s DC. Single Pulse BVDSS Limited.. V DS - Drain-to-Source Voltage (V) *V GS minimum V GS at which r DS(on) is specified Safe Operating Area, Junction-to-Ambient 4
TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) 3 3 I D - Drain Current (A ) Package Limited Dissipation (W) Power 4 8 5 5 75 5 5 75 T C - Case Temperature ( C) Current Derating* 5 5 75 5 5 75 TC - Case Temperature ( C) Power Derating *The power dissipation P D is based on T J(max) = 75 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Normalized Effective Transient Thermal Impedance. Duty Cycle =.5...5. Single Pulse. - 4-3 - - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 5
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