TPCP8J TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type TPCP8J Notebook PC Applications Portable Equipment Applications Unit: mm Lead(Pb)-Free Small mounting area due to small and thin package Low drain-source ON resistance: P Channel R DS (ON) = 27 mω (typ.) High forward transfer admittance: P Channel Y fs = 9.6 S (typ.) Low leakage current: I DSS = μa (V DS = 32 V) Enhancement-mode: P Channel V th =.8 to 2. V (V DS = V, I D = ma).33±.5.5 M A 8 5.475 4.65 2.9±. B 2.4±. A 2.8±..5 M B Absolute Maximum Ratings () MOSFET S.25 S.7±.2.8±.5.28 +. -..2 +.3 -.2 Characteristics Symbol Rating Unit.2 +.3 -.2 Drain-source voltage V DSS 32 V Drain-gate voltage (R GS = 2 kω) V DGR 32 V Gate-source voltage V GSS ±2 V Drain current DC (Note ) I D 5.5 A Pulse (Note ) I DP 22 Drain power dissipation (t = 5 s) (Note 2a) P D 2.4 W Drain power dissipation (t = 5 s) (Note 2b) P D.6 W Single pulse avalanche energy (Note 3) E AS 5.8 mj Avalanche current I AR 3 A Repetitive avalanche energy (Note 4) E AR.2 mj BRT Characteristics Symbol Rating Unit Collector-base voltage V CBO 5 V Collector-emitter voltage V CEO 5 V Emitter-base voltage V EBO 6 V Collector current DC (Note ) I C ma Collector power dissipation P C 2 mw Note: For Notes to 5, refer to the next page. This transistor is an electrostatic-sensitive device. Handle with caution.. Emitter 5. Source 2. Drain 6. Gate 3. Drain 7. Base 4. Drain 8. Collector JEDEC JEITA TOSHIBA Weight:. g (typ.) 2-3VG Circuit Configuration Marking (Note5) 8 7 6 5 8J.28 +. -. 8 7 6 5 R R2 2 3 4 2 3 4 Lot No. 26--7
TPCP8J Common Absolute Maximum Ratings (Ta=25 C ) Characteristics Symbol Rating Unit Junction temperature T J 5 C Storage temperature range T stg 55~5 C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions /Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) R th (ch-a) 58.4 C/W R th (ch-a) 7.9 C/W Note : Ensure that the channel temperature does not exceed 5 C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 25.4.8 (Unit: mm) FR-4 25.4 25.4.8 (Unit: mm) (a) (b) Note 3: V DD = 24 V, T ch = 25 C (initial), L =.2 mh, R G = 25 Ω, I AR = 3. A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: on the lower left of the marking indicates Pin. Weekly code (three digits): Week of manufacture ( for the first week of the year, continues up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 26--7
TPCP8J Electrical Characteristics () MOSFET Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±6 V, V DS = V ± μa Drain cut-off current I DSS V DS = 32 V, V GS = V μa Drain-source breakdown voltage V (BR) DSS I D = ma, V GS = V 32 V V (BR) DSX I D = ma, V GS = 2 V 5 Gate threshold voltage V th V DS = V, I D = ma.8 2. V V GS = V, I D = 3. A 38 49 Drain-source ON resistance R DS (ON) mω V GS = V, I D = 3. A 27 35 Forward transfer admittance Y fs V DS = V, I D = 3. A 4.8 9.6 S Input capacitance C iss 76 Reverse transfer capacitance C rss V DS = V, V GS = V, f = MHz 2 Output capacitance C oss 2 pf Switching time Rise time t r V I D = 3. A 2.8 V GS V V OUT Turn-on time t on 2 Fall time t f 22 V DD 5 V Turn-off time t off Duty < = %, t w = μs 9 4.7 Ω RL = 5 Ω ns Total gate charge Q (gate-source plus gate-drain) g 34 V DD 24 V, V GS = V, Gate-source charge Q gs I D = 5.5 A 4.7 Gate-drain ( miller ) charge Q gd 7.2 nc Source-Drain Ratings and Characteristics () Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current (Pulse) (Note ) I DRP 22 A Forward voltage (diode) V DSF I DR = 5.5 A, V GS = V.2 V 3 26--7
TPCP8J BRT Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I CBO V CB = 5 V, I E = I CEO V CB = 5 V, I E = 5 na Emitter cut-off current I EBO V EB = 6 V, I C =.8.5 ma DC current gain h FE V CE = 5 V, I C = ma 8 Collector-emitter saturation voltage V CE (sat) I C = 5 ma, I B =.25 ma..3 V Input voltage (ON) V I (ON) V CE =.2 V, I C = 5 ma.7.8 V Input voltage (OFF) V I (OFF) V CE = 5 V, I C =. ma.5. V Transition frequency f T V CE = V, I C = 5 ma 25 MHz Collector output capacitance C ob V CB = V, I E =, f = MHz 3 6 pf Input resistor R 7 3 kω Resistor ratio R/R2.9.23.232 4 26--7
MOSFET TPCP8J I D V DS I D V DS 5.5 3 2 2. 2.8 3 2.6 3.5 2.5 2.4 2.3 2.2 8 6 2 3 3.5.5 2.7 2.8 2.6 2.5 2.4 2.3 2.2 VGS = 2.V VGS = 2. V.2.4.6.8. 2 3 5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) 8 6 8 VDS = V I D V GS Ta = 55 C Drain-source voltage VDS (V).5.4.3.2. V DS V GS Ta = 25 ID = 5.5 A 2.7 2 3 25 5.3 2 6 8 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Forward transfer admittance Yfs (S) VDS = V Y fs I D Ta = 55 C 25 Drain-source ON resistance RDS (ON) (mω) R DS (ON) I D VGS = V... 5 26--7
TPCP8J Drain-source ON resistance RDS (ON) ( mω) 8 6 4 2 VGS = V VGS = V R DS (ON) Ta 2.7A 2.7A ID = 5.5A.3A ID = 5.5A.3A Drain reverse current IDR (A) 3 2 I DR V DS.5 8 4 8 2 6.4 VGS = V.8.2.6 2 Ambient temperature Ta ( C) Drain-source voltage VDS (V) Capacitance C (pf) Drain power dissipation PD (W) VGS = V f = MHz. 2.5 2.5 () t = 5 s (2) t = 5 s () DC.5 (2) DC Capacitance V DS Drain-source voltage VDS (V) P D Ta Ciss Coss Crss () Device mounted on a glass-epoxy board(a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) Drain-source voltage VDS (V) Gate threshold voltage Vth (V) 3 2 V th Ta 8 4 8 2 6 Ambient temperature Ta ( C) Dynamic input/output characteristics ID = 5.5 A 3 2 VDS 6 VGS VDS = V ID = ma VDD = 24 V 2 6 2 8 Gate-source voltage VGS (V) 4 8 2 6 Ambient temperature Ta ( C) 2 3 5 Total gate charge Qg (nc) 6 26--7
TPCP8J r th t w Device mounted on a glass-epoxy board (b) (Note 2b) Transient thermal impedance rth ( C/W) Device mounted on a glass-epoxy board (a) Single Pluse.... Safe operating area Pulse width tw (s) ID max (pulsed)* *:Single pulse ms* ms* Curves must be derated linearly with increase in temperature. VDSS max.. Drain-source voltage VDS (V) 7 26--7
BRT TPCP8J 8 26--7
TPCP8J RESTRICTIONS ON PRODUCT USE 277-EN The information contained herein is subject to change without notice. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).these TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer s own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 26--7