N-Channel Enhancement Mode MOSFET Features Pin Description 650V/20A, R DS(ON) = 0.8W(max.) @ V GS = V V @Tj, max=750v (typ.) DS Reliable and Rugged Avalanche Rated Lead Free and Green Devices Available (RoHS Compliant) 0% UIS + R g Tested Applications Top View of TO-220 G G DS D G DS Top View of TO-220FP AC/DC Power Conversion in Switched Mode Power Supplies (SMPS). Uninterruptible Power Supply (UPS), Adapter. S N-Channel MOSFET Ordering and Marking Information SM6F27NS Assembly Material Handling Code Temperature Range Package Code Package Code F : TO-220 FP : TO-220FP Operating Junction Temperature Range C : -55 to 50 o C Handling Code TU : Tube Assembly Material G : Halogen and Lead Free Device SM6F27NS F/FP : SM6F27NS XXXXX XXXXX - Lot Code Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 0% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
Absolute Maximum Ratings (T A = 25 C Unless Otherwise Noted) Symbol Parameter Rating Unit Common Ratings V DSS Drain-Source Voltage 650 V GSS Gate-Source Voltage ±30 T J Maximum Junction Temperature 50 C T STG Storage Temperature Range -55 to 50 C I S Diode Continuous Forward Current 20 a A I DP b I D P D P D R qjc R qjc Pulse Drain Current Tested T C =25 C 80 a A Continuous Drain Current Maximum Power Dissipation for TO-220 Maximum Power Dissipation for TO-220FP Thermal Resistance-Junction to Case for TO-220 Thermal Resistance-Junction to Case for TO-220FP T C =25 C 20 a A T C =0 C 2.7 a T C =25 C 92 T C =0 C 76.9 T C =25 C 34.7 T C =0 C 3.9 0.65 R qja Thermal Resistance-Junction to Ambient 62.5 Drain-Source Avalanche Ratings dv/dt c MOSFET dv/dt ruggedness 50 V/ns E AS d I AR e E AR e Avalanche Energy, Single Pulsed 29 mj Avalanche Current 2.7 A Repetitive Avalanche Energy 0.69 mj Note a:limited by maximum junction temperature. Note b:pulse width limited by safe operating area. Note c:v DS=520V, I D=8A. Note d:i D =2.7A, V DD =50V, T j =25 C. Note e:repetitive Rating : Pulse width limited by maximum junction temperature. 3.6 V W C/W 2
Electrical Characteristics (T A = 25 C Unless Otherwise Noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BV DSS I DSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current V GS =0V, I DS =250mA 650 - - T J =50 C - 750 - V DS =520V, V GS =0V - - T J =50 C - - 200 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =250mA 2.5 3.5 4.5 V I GSS Gate Leakage Current V GS =±30V, V DS =0V - - ±0 na R DS(ON) f Diode Characteristics V SD f Drain-Source On-state Resistance V GS =V, I DS =8A - 0.5 0.8 W Diode Forward Voltage I SD =20A, V GS =0V - 0.94.3 V t rr Reverse Recovery Time - 345 - ns Q rr Reverse Recovery Charge I SD =20A, V R =390V dl SD /dt=0a/ms - 4.8 - mc I rm Peak Reverse Recovery Current - 27 - A Dynamic Characteristics g R G Gate Resistance V GS =0V,V DS =0V, F=MHz V ma - 2.3 - W C iss Input Capacitance V GS =0V, - 8 2350 C oss Output Capacitance V DS =25V, - 350 - C rss Reverse Transfer Capacitance Frequency=.0MHz - 4 - t d(on) Turn-on Delay Time - 9 - V DD =400V, T r Turn-on Rise Time R L =22.2W, - 39 - t d(off) T f Turn-off Delay Time Turn-off Fall Time I DS =20A, V GEN =V, R G =6W - - 47 28 - - Gate Charge Characteristics g Q g Total Gate Charge - 49 64 Q gs Gate-Source Charge V DS =520V, V GS =V, I DS =8A - 9.5 - Q gd Gate-Drain Charge - 22 - Note f:pulse test ; pulse width 300ms, duty cycle 2%. Note g:guaranteed by design, not subject to production testing. pf ns nc 3
Typical Operating Characteristics Power Dissipation : TO-220 Power Dissipation : TO-220FP 2 40 80 50 35 30 Ptot - Power (W) 20 90 60 Ptot - Power (W) 25 20 5 30 T C =25 o C 0 0 20 40 60 80 0 20 40 60 Tj - Junction Temperature ( C) 5 T C =25 o C 0 0 20 40 60 80 0 20 40 60 Tj - Junction Temperature ( C) Safe Operation Area : TO-220 Safe Operation Area : TO-220FP ID - Drain Current (A) 300 0 Rds(on) Limit ms ms 0ms s DC T C =25 O C 0. 0 00 3000 VDS - Drain - Source Voltage (V) ID - Drain Current (A) 300 0 Rds(on) Limit 300ms ms ms 0ms s 0. DC T C =25 O C 0.0 0 00 3000 VDS - Drain - Source Voltage (V) 4
Typical Operating Characteristics (Cont.) Normalized Transient Thermal Resistance 4 0. 0.0 Thermal Transient Impedance: TO-220 0.0 0.02 0.05 Single Pulse 0. 0.2 Duty = 0.5 Mounted on minimum pad R qja :62.5 o C/W E-3 E-4 E-3 0.0 0. Square Wave Pulse Duration (sec) Normalized Transient Thermal Resistance 4 0. 0.0 Thermal Transient Impedance: TO-220FP 0.0 0.02 0.05 Single Pulse 0. 0.2 Duty = 0.5 Mounted on minimum pad R qja :62.5 o C/W E-3 E-4 E-3 0.0 0. Square Wave Pulse Duration (sec) 24 Drain Current 70 Output Characteristics 20 60 V GS =8,,5V ID - Drain Current (A) 6 2 8 ID - Drain Current (A) 50 40 30 20 7V 6V 4 T C =25 o C,V G =V 0 0 20 40 60 80 0 20 40 60 0 0 5 5 20 Tj - Junction Temperature ( C) VDS - Drain - Source Voltage (V) 5
Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 3.0 2.5 V GS = V I DS = 8A 0 Normalized On Resistance 2.0.5.0 0.5 IS - Source Current (A) T j =50 o C T j =25 o C R ON @T j =25 o C: 0.5W 0.0-50 -25 0 25 50 75 0 25 50 Tj - Junction Temperature ( C) 0. 0.0 0.2 0.4 0.6 0.8.0.2.4.6 VSD - Source - Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) 000 00 0 Frequency=MHz Ciss Coss Crss VGS - Gate-source Voltage (V) 9 8 7 6 5 4 3 2 V DS =520V I DS =8A 0 5 5 20 25 30 35 40 VDS - Drain - Source Voltage (V) 0 0 20 30 40 50 QG - Gate Charge (nc) 6
Typical Operating Characteristics (Cont.) Drain-Source On Resistance BVDSS vs Junction Temperature 0.30.6 I DS =250mA RDS(ON) - On - Resistance (mw) 0.25 0.20 0.5 0. 0.05 V GS =V Normalized Breakdown Voltage.4.2.0 0.8 0.6 0.00 0 20 30 40 ID - Drain Current (A) 0.4-50 -25 0 25 50 75 0 25 50 Tj - Junction Temperature ( C) Gate Threshold Voltage.2 I DS =250mA. Normalized Threshold Voltage.0 0.9 0.8 0.7 0.6-50 -25 0 25 50 75 0 25 50 Tj - Junction Temperature ( C) 7
Avalanche Test Circuit and Waveforms VDS L tp VDSX(SUS) DUT VDS RG VDD IAS tp IL 0.0W VDD EAS tav Switching Time Test Circuit and Waveforms VDS DUT RD VDS 90% RG VGS VDD tp % VGS td(on) tr td(off) tf 8
Disclaimer Sinopower Semiconductor, Inc. (hereinafter Sinopower ) has been making great efforts to development high quality and better performance products to satisfy all customers needs. However, a product may fail to meet customer s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. 9
Classification Profile
Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin ) Temperature max (T smax ) Time (T smin to T smax ) (t s ) 0 C 50 C 60-20 seconds 50 C 200 C 60-20 seconds Average ramp-up rate (T smax to T P ) 3 C/second max. 3 C/second max. Liquidous temperature (T L ) Time at liquidous (t L ) Peak package body Temperature (T p )* Time (t P )** within 5 C of the specified classification temperature (T c ) Table. SnPb Eutectic Process Classification Temperatures (Tc) Package Volume mm 3 Thickness <350 Table 2. Pb-free Process Classification Temperatures (Tc) Volume mm 3 350 <2.5 mm 235 C 220 C 2.5 mm 220 C 220 C Package Thickness Volume mm 3 <350 Volume mm 3 350-2000 Volume mm 3 >2000 <.6 mm 260 C 260 C 260 C.6 mm 2.5 mm 260 C 250 C 245 C 2.5 mm 250 C 245 C 245 C Reliability Test Program 83 C 60-50 seconds 27 C 60-50 seconds See Classification Temp in table See Classification Temp in table 2 20** seconds 30** seconds Average ramp-down rate (T p to T smax ) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p ) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. Test item Method Description SOLDERABILITY JESD-22, B2 5 Sec, 245 C HTRB JESD-22, A8 00 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A8 00 Hrs, 0% of VGS max @ Tjmax PCT JESD-22, A2 68 Hrs, 0%RH, 2atm, 2 C TCT JESD-22, A4 500 Cycles, -65 C~50 C Customer Service Sinopower Semiconductor, Inc. 5F, No. 6, Dusing St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: 886-3-563588 Fax: 886-3-5635080