MDQ18N5 N-Channel MOFET 5V MDQ18N5 N-Channel MOFET 5V, 2.A,.27Ω. eneral Description These N-channel MOFET are produced using advanced MagnaChip s MOFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for MP, high peed switching and general purpose applications. Features V D = 5V = 2.A @ = 1V R D(ON).27Ω @ = 1V Applications Power upply HID Lighting D TO-247 D Absolute Maximum Ratings (Ta = 25 o C) Characteristics ymbol Rating Unit Drain-ource Voltage V D 5 V ate-ource Voltage ±3 V Continuous Drain Current T C=25 o C 2 A T C=1 o C 12.5 A Pulsed Drain Current (1) M 8 A Power Dissipation T C=25 o C P D 245 W Derate above 25 o C 1.96 W/ o C Repetitive Avalanche Energy (1) E AR 24.5 mj Peak Diode Recovery dv/dt (3) dv/dt 4.5 V/ns ingle Pulse Avalanche Energy (4) E A 95 mj Junction and torage Range T J, T stg -55~15 * limited by maximum junction temperature o C Thermal Characteristics Characteristics ymbol Rating Unit Thermal Resistance, Junction-to-Ambient (1) R θja 4 o C/W Thermal Resistance, Junction-to-Case (1) R θjc.51 1
MDQ18N5 N-Channel MOFET 5V Ordering Information Part Number Temp. Range Package Packing RoH tatus MDQ18N5TP -55~15 o C TO-247 Tube Pb Free MDQ18N5TH -55~15 o C TO-247 Tube Halogen Free Electrical Characteristics (Ta =25 o C) Characteristics ymbol Test Condition Min Typ Max Unit tatic Characteristics Drain-ource Breakdown Voltage BV D = 25μA, = V 5 - - ate Threshold Voltage (th) V D =, = 25μA 3. - 5. Drain Cut-Off Current V D = 5V, = V - - 1 μa ate Leakage Current I = ±3V, V D = V - - 1 na Drain-ource ON Resistance R D(ON) = 1V, = 1A -.22.27 Ω Forward Transconductance g fs V D = 3V, = 1A - 13 - Dynamic Characteristics Total ate Charge Q g - 48 - ate-ource Charge Q gs V D = 4V, = 18A, = 1V (3) - 12 - ate-drain Charge Q gd - 15 - Input Capacitance C iss - 243 - Reverse Transfer Capacitance C rss V D = 25V, = V, f = 1.MHz - 1 - Output Capacitance C oss - 32 - Turn-On Delay Time t d(on) - 87 - Rise Time t r = 1V, V D = 25V, = 18A, - 8 - Turn-Off Delay Time t d(off) R = 25Ω (3) - 174 - Fall Time t f - 45 - Drain-ource Body Diode Characteristics Maximum Continuos Drain to ource Diode Forward Current ource-drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes : I - - 2 A V D I = 2A, = V - - 1.4 V t rr - 375 - ns I F = 18A, dl/dt = 1A/μs (3) Q rr - 4.2 - μc 1. Pulse width is based on R θjc & R θja and the maximum allowed junction temperature of 15 C. 2. Pulse test: pulse width 3us, duty cycle 2%, pulse width limited by junction temperature T J(MAX)=15 C. 3. I D 18.A, di/dt 2A/us, V DD BVdss, R g =25Ω, tarting T J=25 C 4. L=4.28mH, I A=2A, V DD=5V, R g =25Ω, tarting T J=25 C V nc pf ns 2
[A] R D(ON), (Normalized) Drain-ource On-Resistance BV D, (Normalized) Drain-ource Breakdown Voltage,Drain Current [A] MDQ18N5 N-Channel MOFET 5V 6 Reverse Drain Current [A] R D(ON) [Ω ].4 4 V gs =5.5V =6.V =6.5V =7.V =8.V =1.V =15.V Notes 1. 25 μs Pulse Test 2. T C =25.3 =1.V 2.2 =2V 1 2 V D,Drain-ource Voltage [V] Fig.1 On-Region Characteristics.1 5 1 15 2 25 3 35 4 45 5 55 6,Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and ate Voltage 3. 1.2 2.5 1. = 1 V 2. = 1 A 1. = V 2. = 25 μa 1.1 2. 1.5 1. 1..9.5. -5 5 1 15 T J, Junction [ o C] Fig.3 On-Resistance Variation with.8-5 5 1 15 2 T J, Junction [ o C] Fig.4 Breakdown Voltage Variation vs. 1 * Notes ; 1. V D =3V 1 1. = V 2. 25 μs Pulse Test 1 R 1 15 25 1 3 4 5 6 7 8 9 1 [V] Fig.5 Transfer Characteristics 3 1..2.4.6.8 1. 1.2 V D, ource-drain Voltage [V] Fig.6 Body Diode Forward Voltage Variation with ource Current and
Z θ JC (t), Thermal Response Power (W), Drain Current [A], Drain Current [A], ate-ource Voltage [V] Capacitance [pf] MDQ18N5 N-Channel MOFET 5V 1 Note : = 18A 6 5 C oss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 8 1V 25V 4V 4 C iss 6 3 4 2 2 1 Notes ; 1. = V 2. f = 1 MHz C rss 1 2 3 4 5 Q, Total ate Charge [nc] Fig.7 ate Charge Characteristics.1 1 1 V D, Drain-ource Voltage [V] Fig.8 Capacitance Characteristics 1 2 Operation in This Area 1 s is Limited by R D(on) 1 s 1 1 1 1-1 ingle Pulse T J =Max rated T C =25 1 ms 1 ms 1 ms DC 1-1 1 1 1 1 2 V D, Drain-ource Voltage [V] 22 2 18 16 14 12 1 8 6 4 2 25 5 75 1 125 15 T C, Case [ ] Fig.9 Maximum afe Operating Area Fig.1 Maximum Drain Current vs. Case 1 24 D=.5 21 18 single Pulse R thjc =.51 /W T C = 25 1-1.2 15.1 12.5 9 1-2.2.1 single pulse Duty Factor, D=t 1 /t 2 PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JC =.51 /W 1-5 1-4 1-3 1-2 1-1 1 1 1 t 1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve 6 3 1E-5 1E-4 1E-3.1.1 1 Pulse Width (s) Fig.12 ingle Pulse Maximum Power Dissipation 4
L L1 D E2 D1 Q MDQ18N5 N-Channel MOFET 5V Physical Dimension TO-247 Dimensions are in millimeters, unless otherwise specified E A A2 ΦP b2 b1 b E1 e c A1 Dimension Min(mm) Max(mm) A 4.7 5.31 A1 2.2 2.6 A2 1.5 2.49 b.99 1.4 b1 2.59 3.43 b2 1.65 2.39 c.38.89 D 2.3 21.46 D1 13.8 - E 15.45 16.26 E1 13.6 14.2 E2 4.32 5.49 e 5.45BC L 19.81 2.57 L1-4.5 ΦP 3.5 3.7 Q 5.38 6.2 6.15BC 5
MDQ18N5 N-Channel MOFET 5V DICLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. eller s customers using or selling eller s products for use in such applications do so at their own risk and agree to fully defend and indemnify eller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip emiconductor Ltd. 6