AO443 NChannel Enhancement Mode Field Effect Transistor General Description The AO443/L uses advanced trench technology to provide excellent R DS(ON), shootthrough immunity, body diode characteristics and ultralow gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. AO443 and AO443L are electrically identical. RoHS Compliant AO443L is Halogen Free Features V DS (V) = 3V I D = 8A (V GS = V) R DS(ON) < 5.5mΩ (V GS = V) R DS(ON) < 7.5mΩ (V GS = 4.5V) % UIS Tested! % Rg Tested! SOIC8 D D S G G S Absolute Maximum Ratings unless otherwise noted Parameter Symbol DrainSource Voltage V DS GateSource Voltage Continuous Drain Current AF Pulsed Drain Current B Power Dissipation T A =7 C T A =7 C Avalanche Current B 3 V GS I DM I Repetitive avalanche energy.3mh B 35 mj Junction and Storage Temperature Range I D P D E T J, T STG Maximum 3 Units V Thermal Characteristics Parameter Symbol Typ Max Units Maximum JunctiontoAmbient A t s 3 4 R θja Maximum JunctiontoAmbient A SteadyState 59 75 Maximum JunctiontoLead C SteadyState R θjl 6 24 ±2 8 5 8 3 2. 55 to 5 V A W A C
AO443 Electrical Characteristics (T J = unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PAMETERS BV DSS DrainSource Breakdown Voltage I D =25µA, V GS =V 3 V V DS =3V, V GS =V I DSS Zero Gate Voltage Drain Current µa T J =55 C 5 I GSS GateBody leakage current V DS =V, V GS = ±2V na V GS(th) Gate Threshold Voltage V DS =V GS I D =25µA.8 2.5 V I D(ON) On state drain current V GS =4.5V, V DS =5V 8 A R DS(ON) Static DrainSource OnResistance V GS =V, I D =8A V GS =4.5V, I D =5A 4.7 5.5 T J = 6.5 8 6.2 7.5 mω g FS Forward Transconductance V DS =5V, I D =8A 82 S V SD Diode Forward Voltage I S =A,V GS =V.7 V I S Maximum BodyDiode Continuous Current 4.5 A DYNAMIC PAMETERS C iss Input Capacitance 466 66 727 pf C oss Output Capacitance V GS =V, V DS =5V, f=mhz 425 638 96 pf C rss Reverse Transfer Capacitance 24 355 53 pf R g Gate resistance V GS =V, V DS =V, f=mhz.2.45.9 Ω SWITCHING PAMETERS Q g (V) Total Gate Charge 8 3 24 nc Q g (4.5V) Total Gate Charge 37 48 58 nc V GS =V, V DS =5V, I D =8A Q gs Gate Source Charge 8 nc Q gd Gate Drain Charge 5 nc t D(on) TurnOn DelayTime 2 6 ns t r TurnOn Rise Time V GS =V, V DS =5V, R L =.83Ω, 8 2 ns t D(off) TurnOff DelayTime R GEN =3Ω 5.5 7 ns t f TurnOff Fall Time 8.8 4 ns t rr Body Diode Reverse Recovery Time I F =8A, di/dt=a/µs 33.5 44 ns Q rr Body Diode Reverse Recovery Charge I F =8A, di/dt=a/µs 22 3 nc A: The value of R θja is measured with the device mounted on in 2 FR4 board with 2oz. Copper, in a still air environment with. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures to 6 are obtained using <3 µs pulses, duty cycle.5% max. E. These tests are performed with the device mounted on in 2 FR4 board with 2oz. Copper, in a still air environment with. The SOA curve provides a single pulse rating. F. The current rating is based on the t s junction to ambient thermal resistance rating. Rev5: Nov 28 mω THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS E NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
AO443 TYPICAL ELECTRICAL AND THERMAL CHACTERISTICS 6 5 4 3 3.5V V 4.5V 3.V 6 5 4 3 V DS =5V 2 V GS =2.5V 2 3 4 5 Fig : OnRegion Characteristics 2.5 2 2.5 3 3.5 Figure 2: Transfer Characteristics 7..6 R DS(ON) (mω) 6.5 6. 5.5 5. 4.5 4. V GS =4.5V V GS =V Normalized OnResistance.4.2 I D =8A V GS =4.5V V GS =V 3.5 2 4 6 8 Figure 3: OnResistance vs. Drain Current and Gate Voltage.8 25 5 75 25 5 75 Temperature ( C) Figure 4: OnResistance vs. Junction Temperature 6.E2 2 I D =8A.E.E R DS(ON) (mω) 8 4 I S (A).E.E2.E3.E4 2 4 6 8 Figure 5: OnResistance vs. GateSource Voltage.E5..2.4.6.8. V SD (Volts) Figure 6: BodyDiode Characteristics
AO443 TYPICAL ELECTRICAL AND THERMAL CHACTERISTICS 8 6 4 2 V DS =5V I D =8A Capacitance (pf) 8 6 4 2 C rss C oss C iss 2 4 6 8 2 Q g (nc) Figure 7: GateCharge Characteristics 5 5 2 25 3 Figure 8: Capacitance Characteristics I D (Amps)... R DS(ON) limited T J(Max) =5 C s s DC ms.s µs ms µs Power (W) 8 6 4 2 T J(Max) =5 C.. Figure 9: Maximum Forward Biased Safe Operating Area (Note E)... Pulse Width (s) Figure : Single Pulse Power Rating Junctionto Ambient (Note E) Z θja Normalized Transient Thermal Resistance. D=T on /T T J,PK =T A P DM.Z θja.r θja R θja =75 Single Pulse In descending order D=.5,.3,.,.5,.2,., single pulse P D T on T...... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance
AO443 Gate Charge Test Circuit & Waveform Qg V Qgs Qgd Ig RL Resistive Switching Test Circuit & Waveforms Charge Rg 9% % t d(on) t r t d(off) t f t on t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L E = /2 LI 2 BV DSS Rg Id Id I Diode Recovery Test Circuit & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr