3V NChannel MOFET General escription The AO4494 combines advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). This device is for PWM applications. Product ummary V (V) = 3V I = 18A (V G = 1V) R (ON) < 6.5mΩ (V G = 1V) R (ON) < 9.5mΩ (V G = 4.5V) 1% UI Tested 1% R g Tested Top View OIC8 Bottom View Absolute Maximum Ratings T A =5 C unless otherwise noted Parameter ymbol Maximum rainource Voltage 3 Gateource Voltage Continuous rain T C =5 C Current T C =7 C Pulsed rain Current C Avalanche Current C I AR Repetitive avalanche energy L=.1mH C E AR 51 Power issipation B G T C =5 C T C =7 C V V G I 18 14 I M P Junction and torage Temperature Range T J, T TG 55 to 15 C Thermal Characteristics Parameter ymbol Typ Max Units Maximum JunctiontoAmbient A t 1s 8 4 C/W Maximum JunctiontoAmbient A R θja teadytate 59 75 C/W Maximum JunctiontoLead teadytate R θjl 16 4 C/W ± 13 3 3.1 G Units V V A A mj W
Electrical Characteristics (T J =5 C unless otherwise noted) ymbol Parameter Conditions Min Typ Max Units TATIC PARAMETER BV rainource Breakdown Voltage I =5µA, V G =V 3 V V =3V, V G =V 1 I Zero Gate Voltage rain Current µa T J =15 C 5 I G GateBody leakage current V =V, V G = ±V ±1 na V G(th) Gate Threshold Voltage V =V G I =5µA 1.5.5 V I (ON) On state drain current V G =1V, V =5V 13 A R (ON) tatic rainource OnResistance V G =1V, I =18A V G =4.5V, I =16A 5.4 6.5 T J =15 C 8.4 1.1 7.5 9.5 mω g F Forward Transconductance V =5V, I =18A 7 V iode Forward Voltage I =1A,V G =V.75 1 V I Maximum Bodyiode Continuous Current 3 A YNAMIC PARAMETER C iss Input Capacitance 17 159 19 pf C oss Output Capacitance V G =V, V =15V, f=1mhz 17 4 31 pf C rss Reverse Transfer Capacitance 87 145 pf R g Gate resistance V G =V, V =V, f=1mhz.8 1.5.3 Ω WITCHING PARAMETER Q g (1V) Total Gate Charge 4 3 36 nc Q g (4.5V) Total Gate Charge 1 15 18 nc V G =1V, V =15V, I =18A Q gs Gate ource Charge 4. 5. 6. nc Q gd Gate rain Charge 4.7 7.8 11 nc t (on) TurnOn elaytime 6.7 ns t r TurnOn Rise Time V G =1V, V =15V, R L =.83Ω, 3.5 ns t (off) TurnOff elaytime R GEN =3Ω.5 ns t f TurnOff Fall Time 4 ns t rr Body iode Reverse Recovery Time I F =18A, di/dt=5a/µs 8 34 ns Q rr Body iode Reverse Recovery Charge I F =18A, di/dt=5a/µs 19 4 3 nc A. The value of R θja is measured with the device mounted on 1in FR4 board with oz. Copper, in a still air environment with T A =5 C. The Power dissipation P M is based on R θja and the maximum allowed junction temperature of 15 C. The value in any given application depends on the user's specific board design. B. The power dissipation P is based on T J(MAX) =15 C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =15 C. Ratings are based on low frequency and duty cycles to keep initial T J =5 C.. The R θja is the sum of the thermal impedence from junction to case R θjc and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <3µs pulses, duty cycle.5% max. F. These curves are based on the junctiontocase thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =15 C. The OA curve provides a single pulse ratin g. Rev1: Nov. 1 mω COMPONENT IN LIFE UPPORT EVICE OR YTEM ARE NOT AUTHORIZE. AO OE NOT AUME ANY LIABILITY ARIING OUT OF UCH APPLICATION OR UE OF IT PROUCT. AO REERVE THE RIGHT TO IMPROVE PROUCT EIGN, FUNCTION AN RELIABILITY WITHOUT NOTICE.
TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC I (A) 14 1 1 8 6 4 1V 6V 7V 5V 4V 3.5V V G =3V 4.5V 1 3 4 5 V (Volts) Fig 1: OnRegion Characteristics (Note E) I (A) 1 8 6 4 V =5V 15 C 5 C 1 3 4 5 6 V G (Volts) Figure : Transfer Characteristics (Note E) 1 1.8 R (ON) (mω) 1 8 6 4 V G =4.5V V G =1V Normalized OnResistance 1.6 1.4 1. 1 V G =1V I =18A 17 5 V G =4.5V I =16A 1 5 1 15 5 3 I (A) Figure 3: OnResistance vs. rain Current and Gate Voltage (Note E).8 5 5 75 1 15 15 175 Temperature ( C) Figure 4: OnResistance vs. Junction 18 Temperature (Note E) 5 I =18A 1.E 1.E1 4 1.E R (ON) (mω) 15 1 15 C I (A) 1.E1 1.E 1.E3 15 C 5 C 5 5 C 1.E4 4 6 8 1 V G (Volts) Figure 5: OnResistance vs. Gateource Voltage (Note E) 1.E5...4.6.8 1. 1. V (Volts) Figure 6: Bodyiode Characteristics (Note E)
TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC V G (Volts) 1 8 6 4 V =15V I =18A 5 1 15 5 3 Q g (nc) Figure 7: GateCharge Characteristics Capacitance (pf) 18 16 14 1 1 8 6 4 C rss C oss C iss 5 1 15 5 3 V (Volts) Figure 8: Capacitance Characteristics I (A), Peak Avalanche Current 9. 8. 7. 6. 5. 4. 3.. T A =15 C T A =5 C 1µs T A =1 C T A =15 C.1.1.1.1 Time in avalanche, t A (s) Figure 1: ingle Pulse Avalanche capability (Note C) I (Amps) 1. 1. 1. 1..1. R (ON) limited T J(Max) =15 C T A =5 C.1 1 1 1 V (Volts) Figure 9: Maximum Forward Biased afe Operating Area (Note F) 1µs 1µs 1ms 1ms 1ms 1s C 1 T A =5 C Power (W) 1 1 1.1.1.1.1.1 1 1 1 1 Pulse Width (s) Figure 15: ingle Pulse Power Rating JunctiontoAmbient (Note F)
TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC Z θja Normalized Transient Thermal Resistance 1 1.1.1.1 =T on /T T J,PK =T A P M.Z θja.r θja R θja =4 C/W ingle Pulse In descending order =.5,.3,.1,.5,.,.1, single pulse.1.1.1.1.1 1 1 1 1 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note F) 4 P T on T
Gate Charge Test Circuit & Waveform Qg VC UT VC 1V Qgs Qgd Ig RL Resistive witching Test Circuit & Waveforms Charge Rg UT VC 9% 1% td(on) t r t d(off) t f t on t off Unclamped Inductive witching (UI) Test Circuit & Waveforms L E = 1/ LI AR AR BV Rg Id VC Id I AR UT iode Recovery Test Circuit & Waveforms UT Q = Idt rr Ig Isd L VC Isd I F di/dt I RM t rr