MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 6VCoolMOS P6PowerTransistor IPx6R6P6 DataSheet Rev.2.2 Final PowerManagement&Multimarket
6VCoolMOS P6PowerTransistor IPB6R6P6,IPP6R6P6,IPA6R6P6, 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.coolmos P6seriescombinesthe experienceoftheleadingsjmosfetsupplierwithhighclassinnovation. TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. D²PAK tab 2 1 3 DPAK tab TO22 tab TO22FP 1 2 Features IncreasedMOSFETdv/dtruggedness ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Veryhighcommutationruggedness Easytouse/drive Pbfreeplating,Halogenfreemoldcompound QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(JSTD2 andjesd22) Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.pcsilverbox,adapter,lcd&pdptv,lighting,server,telecom andups. 3 Gate Pin 1 Drain Pin 2, Tab Source Pin 3 Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 65 V RDS(on),max 6 mω Qg.typ 12 nc ID,pulse 18 A Eoss@4V 1.8 µj Body diode di/dt 5 A/µs Type/OrderingCode Package Marking RelatedLinks IPB6R6P6 PGTO 263 IPP6R6P6 PGTO 22 IPA6R6P6 PGTO 22 FullPAK 6R6P6 see Appendix A PGTO 252 2 Rev.2.2,21571
6VCoolMOS P6PowerTransistor IPB6R6P6,IPP6R6P6,IPA6R6P6, TableofContents Description............................................................................. 2 Maximum ratings........................................................................ 4 Thermal characteristics.................................................................... 5 Electrical characteristics................................................................... 6 Electrical characteristics diagrams........................................................... 8 Test Circuits........................................................................... 13 Package Outlines....................................................................... 14 Appendix A............................................................................ 18 Revision History........................................................................ 19 Disclaimer............................................................................ 19 3 Rev.2.2,21571
6VCoolMOS P6PowerTransistor IPB6R6P6,IPP6R6P6,IPA6R6P6, 2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID 7.3 4.6 A TC=25 C TC=1 C Pulsed drain current 2) ID,pulse 18 A TC=25 C Avalanche energy, single pulse EAS 133 mj ID=1.3A; VDD=5V; see table 12 Avalanche energy, repetitive EAR.2 mj ID=1.3A; VDD=5V; see table 12 Avalanche current, repetitive IAR 1.3 A MOSFET dv/dt ruggedness dv/dt 1 V/ns VDS=...4V Gate source voltage (static) VGS 2 2 V static; Gate source voltage (dynamic) VGS 3 3 V AC (f>1 Hz) Power dissipation (Non FullPAK) TO22, TO252, TO263 Power dissipation (FullPAK) TO22FP Ptot 63 W TC=25 C Ptot 28 W TC=25 C Storage temperature Tstg 55 15 C Operating junction temperature Tj 55 15 C Mounting torque (Non FullPAK) TO22 Mounting torque (FullPAK) TO22FP 6 Ncm M3 and M3.5 screws 5 Ncm M2.5 screws Continuous diode forward current IS 6.3 A TC=25 C Diode pulse current 2) IS,pulse 18 A TC=25 C Reverse diode dv/dt 3) dv/dt 15 V/ns VDS=...4V,ISD<=IS,Tj=25 C see table 1 Maximum diode commutation speed dif/dt 5 A/µs VDS=...4V,ISD<=IS,Tj=25 C see table 1 Insulation withstand voltage for TO22FP VISO 25 V Vrms,TC=25 C,t=1min 1) Limited by Tj max. Maximum duty cycle D=.75 2) Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 4 Rev.2.2,21571
6VCoolMOS P6PowerTransistor IPB6R6P6,IPP6R6P6,IPA6R6P6, 3Thermalcharacteristics Table3Thermalcharacteristics(NonFullPAK)TO22 Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 2 C/W Thermal resistance, junction ambient RthJA 62 C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold 26 C 1.6mm (.63 in.) from case for 1s Table4Thermalcharacteristics(FullPAK)TO22FP Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 4.5 C/W Thermal resistance, junction ambient RthJA 8 C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold 26 C 1.6mm (.63 in.) from case for 1s Table5ThermalcharacteristicsTO252,TO263 Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 2 C/W Thermal resistance, junction ambient RthJA 62 C/W device on PCB, minimal footprint Thermal resistance, junction ambient for SMD version Soldering temperature, wave & reflow soldering allowed RthJA 35 45 C/W Tsold 26 C reflow MSL1 Device on 4mm*4mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 7µm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. 5 Rev.2.2,21571
6VCoolMOS P6PowerTransistor IPB6R6P6,IPP6R6P6,IPA6R6P6, 4Electricalcharacteristics attj=25 C,unlessotherwisespecified Table6Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 6 V VGS=V,ID=1mA Gate threshold voltage V(GS)th 3.5 4. 4.5 V VDS=VGS,ID=.2mA Zero gate voltage drain current IDSS 1 1 µa VDS=6,VGS=V,Tj=25 C VDS=6,VGS=V,Tj=15 C Gatesource leakage current IGSS 1 na VGS=2V,VDS=V Drainsource onstate resistance RDS(on).54 1.44.6 Ω VGS=1V,ID=2.4A,Tj=25 C VGS=1V,ID=2.4A,Tj=15 C Gate resistance RG 11 Ω f=1mhz,opendrain Table7Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 557 pf VGS=V,VDS=1V,f=1MHz Output capacitance Coss 28 pf VGS=V,VDS=1V,f=1MHz Effective output capacitance, energy related 1) Co(er) 23 pf VGS=V,VDS=...4V Effective output capacitance, time related 2) Co(tr) 88 pf ID=constant,VGS=V,VDS=...4V Turnon delay time td(on) 11 ns Rise time tr 7 ns Turnoff delay time td(off) 33 ns Fall time tf 14 ns VDD=4V,VGS=13V,ID=3A, RG=6.8Ω;seetable11 VDD=4V,VGS=13V,ID=3A, RG=6.8Ω;seetable11 VDD=4V,VGS=13V,ID=3A, RG=6.8Ω;seetable11 VDD=4V,VGS=13V,ID=3A, RG=6.8Ω;seetable11 Table8Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 3 nc VDD=4V,ID=3A,VGS=to1V Gate to drain charge Qgd 5 nc VDD=4V,ID=3A,VGS=to1V Gate charge total Qg 12 nc VDD=4V,ID=3A,VGS=to1V Gate plateau voltage Vplateau 6.1 V VDD=4V,ID=3A,VGS=to1V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromto4V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfromto4V 6 Rev.2.2,21571
6VCoolMOS P6PowerTransistor IPB6R6P6,IPP6R6P6,IPA6R6P6, Table9Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD.9 V VGS=V,IF=3A,Tj=25 C Reverse recovery time trr 196 ns Reverse recovery charge Qrr 1.7 µc Peak reverse recovery current Irrm 17 A VR=4V,IF=3A,diF/dt=1A/µs; see table 1 VR=4V,IF=3A,diF/dt=1A/µs; see table 1 VR=4V,IF=3A,diF/dt=1A/µs; see table 1 7 Rev.2.2,21571
5Electricalcharacteristicsdiagrams 6VCoolMOS P6PowerTransistor IPB6R6P6,IPP6R6P6,IPA6R6P6, Diagram1:Powerdissipation(NonFullPAK) 7 Diagram2:Powerdissipation(FullPAK) 3 6 25 5 2 Ptot[W] 4 3 Ptot[W] 15 2 1 1 5 25 5 75 1 125 15 TC[ C] Ptot=f(TC) 25 5 75 1 125 15 TC[ C] Ptot=f(TC) Diagram3:Max.transientthermalimpedance(NonFullPAK) 1 1 Diagram4:Max.transientthermalimpedance(NonFullPAK) 1 1.5 ZthJC[K/W] 1 1 1.5.2.1.5.2 ZthJC[K/W] 1 1 1.2.1.5.2.1 single pulse.1 single pulse 1 2 1 5 1 4 1 3 1 2 1 1 tp[s] ZthJC=f(tP);parameter:D=tp/T 1 2 1 5 1 4 1 3 1 2 1 1 1 1 1 tp[s] ZthJC=f(tP);parameter:D=tp/T 8 Rev.2.2,21571
6VCoolMOS P6PowerTransistor IPB6R6P6,IPP6R6P6,IPA6R6P6, Diagram5:Safeoperatingarea(NonFullPAK) 1 2 Diagram6:Safeoperatingarea(FullPAK) 1 2 ID[A] 1 1 1 1 1 DC 1 µs 1 µs 1 µs 1 ms 1 ms ID[A] 1 1 1 1 1 DC 1 µs 1 µs 1 µs 1 ms 1 ms 1 2 1 2 1 3 1 3 1 1 1 1 2 1 3 VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp 1 4 1 1 1 1 2 1 3 VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp Diagram7:Safeoperatingarea(NonFullPAK) 1 2 Diagram8:Safeoperatingarea(FullPAK) 1 2 ID[A] 1 1 1 1 1 DC 1 µs 1 µs 1 ms 1 ms 1 µs ID[A] 1 1 1 1 1 DC 1 µs 1 µs 1 ms 1 ms 1 µs 1 2 1 2 1 3 1 3 1 1 1 1 2 1 3 VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp 1 4 1 1 1 1 2 1 3 VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp 9 Rev.2.2,21571
6VCoolMOS P6PowerTransistor IPB6R6P6,IPP6R6P6,IPA6R6P6, Diagram9:Typ.outputcharacteristics Diagram1:Typ.outputcharacteristics 2 12 1 V 2 V 2 V 1 V 8 V 15 8 V 9 7 V ID[A] 1 7 V ID[A] 6 6 V 5 6 V 3 5.5 V 5.5 V 4.5 V 5 V 5 1 15 2 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 5 V 4.5 V 5 1 15 2 VDS[V] ID=f(VDS);Tj=125 C;parameter:VGS Diagram11:Typ.drainsourceonstateresistance 5. 4.5 4. 3.5 Diagram12:Drainsourceonstateresistance 1.5 1.4 1.3 1.2 1.1 1. RDS(on)[Ω] 3. 2.5 5.5 V 6 V 6.5 V 7 V 1 V RDS(on)[Ω].9.8.7 98% typ 2. 2 V.6.5 1.5.4 1..3.2.5 5 1 15 ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS.1 5 25 25 5 75 1 125 15 Tj[ C] RDS(on)=f(Tj);ID=2.4A;VGS=1V 1 Rev.2.2,21571
6VCoolMOS P6PowerTransistor IPB6R6P6,IPP6R6P6,IPA6R6P6, Diagram13:Typ.transfercharacteristics 2 Diagram14:Typ.gatecharge 1 25 C 9 15 8 7 12 V 48 V 6 ID[A] 1 15 C VGS[V] 5 4 5 3 2 1 2 4 6 8 1 12 VGS[V] ID=f(VGS);VDS=2V;parameter:Tj 3 6 9 12 15 Qgate[nC] VGS=f(Qgate);ID=3.Apulsed;parameter:VDD Diagram15:Forwardcharacteristicsofreversediode 1 2 Diagram16:Avalancheenergy 14 12 1 1 1 IF[A] 125 C 25 C EAS[mJ] 8 6 1 4 2 1 1..5 1. 1.5 2. VSD[V] IF=f(VSD);parameter:Tj 25 5 75 1 125 15 Tj[ C] EAS=f(Tj);ID=1.3A;VDD=5V 11 Rev.2.2,21571
6V CoolMOS P6 Power Transistor IPB6R6P6, IPP6R6P6, IPA6R6P6, Diagram 17: Drainsource breakdown voltage Diagram 18: Typ. capacitances 14 7 68 66 13 Ciss 62 C [pf] VBR(DSS) [V] 64 6 12 Coss 58 11 56 54 Crss 52 75 5 25 25 5 75 1 125 15 175 1 1 Tj [ C] 2 3 4 5 VDS [V] VBR(DSS)=f(Tj); ID=1 ma C=f(VDS); VGS= V; f=1 MHz Diagram 19: Typ. Coss stored energy 3. 2.5 Eoss [µj] 2. 1.5 1..5. 1 2 3 4 5 VDS [V] Eoss=f(VDS) 12 Rev. 2.2, 21571
6V CoolMOS P6 Power Transistor IPB6R6P6, IPP6R6P6, IPA6R6P6, 6 Test Circuits Table 1 Diode characteristics Test circuit for diode characteristics Diode recovery waveform V,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tf ts dif / dt QF IF t dirr / dt trr =tf +ts Qrr = QF + QS Irrm Rg1 = Rg 2 IF 1 %Irrm QS Table 11 Switching times Switching times test circuit for inductive load Switching times waveform VDS 9% VDS VGS VGS 1% td(on) ton tr td(off) tf toff Table 12 Unclamped inductive load Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS 13 ID VDS Rev. 2.2, 21571
6V CoolMOS P6 Power Transistor IPB6R6P6, IPP6R6P6, IPA6R6P6, 7 Package Outlines Figure 1 Outline PGTO 263, dimensions in mm/inches 14 Rev. 2.2, 21571
6V CoolMOS P6 Power Transistor IPB6R6P6, IPP6R6P6, IPA6R6P6, Figure 2 Outline PGTO 22, dimensions in mm/inches 15 Rev. 2.2, 21571
6V CoolMOS P6 Power Transistor IPB6R6P6, IPP6R6P6, IPA6R6P6, DIM A A1 A2 b b1 b2 b3 b4 c D D1 E e e1 N H L L1 Q MILLIMETERS MIN MAX 4.5 4.9 2.34 2.85 2.86 2.42.65.9.95 1.38.95 1.51.65 1.38.65 1.51.4.63 15.67 16.15 8.97 9.83 1. 1.65 2.54 (BSC) INCHES MIN.177.92.95.26.37.37.26.26.16.617.353.394 DOCUMENT NO. Z8B3319 SCALE 2.5 2.5 5mm EUROPEAN PROJECTION.1 (BSC) 5.8 3 28.7 12.78 2.83 2.95 3.15 MAX.193.112.113.35.54.59.54.59.25.636.387.419.2 3 29.75 13.75 3.45 3.38 3.5 1.13.53.111.116.124 1.171.541.136.133.138 ISSUE DATE 55214 REVISION 4 Figure 3 Outline PGTO 22 FullPAK, dimensions in mm/inches 16 Rev. 2.2, 21571
6V CoolMOS P6 Power Transistor IPB6R6P6, IPP6R6P6, IPA6R6P6, Figure 4 Outline PGTO 252, dimensions in mm/inches 17 Rev. 2.2, 21571
6V CoolMOS P6 Power Transistor IPB6R6P6, IPP6R6P6, IPA6R6P6, 8 Appendix A Table 13 Related Links IFX CoolMOSTM P6 Webpage: www.infineon.com IFX CoolMOSTM P6 application note: www.infineon.com IFX CoolMOSTM P6 simulation model: www.infineon.com IFX Design tools: www.infineon.com 18 Rev. 2.2, 21571
6V CoolMOS P6 Power Transistor IPB6R6P6, IPP6R6P6, IPA6R6P6, Revision History IPB6R6P6, IPP6R6P6, IPA6R6P6, Revision: 21571, Rev. 2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2. 213125 Release of final version 2.1 213125 Release of multipackage datasheet 2.2 21571 PGTO 263 package added We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 München, Germany 215 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 19 Rev. 2.2, 21571