TC74AC04P, TC74AC04F, TC74AC04FT

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TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74AC04P, TC74AC04F, TC74AC04FT TC74AC04P/F/FT Hex Inverter The TC74AC04 is an advanced high speed CMOS INVERTER fabricated with silicon gate and double-layer metal wiring C 2 MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against satic discharge or transient excess voltage. Features High speed: t pd = 3.2 ns (typ.) at V CC = 5 V Low power dissipation: I CC = 4 μa (max) at Ta = 25 C High noise immunity: V NIH = V NIL = 28% V CC (min) Symmetrical output impedance: I OH = I OL = 24 ma (min) Capability of driving 50 Ω transmission lines. Balanced propagation delays: t plh t phl Wide operating voltage range: V CC (opr) = 2 to 5.5 V Pin and function compatible with 74F04 TC74AC04P TC74AC04F TC74AC04FT Weight DIP14-P-300-2.54 SOP14-P-300-1.27A TSSOP14-P-0044-0.65A : 0.96 g (typ.) : 8 g (typ.) : 0.06 g (typ.) Start of commercial production 1986-05 1

Pin Assignment IEC Logic Symbol 1A 1 1Y 2 2A 3 2Y 4 14 13 12 11 V CC 6A 6Y 5A 1A 2A 3A 4A 5A 6A (1) (3) (5) (9) (11) (13) 1 (2) (4) (6) (8) (10) (12) 1Y 2Y 3Y 4Y 5Y 6Y 3A 5 10 5Y 3Y 6 9 4A GND 7 8 4Y (top view) Truth Table A L H Y H L Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Supply voltage range V CC 0.5 to 7.0 V DC input voltage V IN 0.5 to V CC + 0.5 V DC output voltage V OUT 0.5 to V CC + 0.5 V Input diode current I IK ±20 ma Output diode current I OK ±50 ma DC output current I OUT ±50 ma DC V CC /ground current I CC ±150 ma Power dissipation P D 500 (DIP) (Note 2)/180 (SOP/TSSOP) mw Storage temperature T stg 65 to 150 C Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions /Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: 500 mw in the range of Ta = 40 to 65 C. From Ta = 65 to 85 C a derating factor of 10 mw/ C should be applied up to 300 mw. 2

Operating Ranges (Note) Characteristics Symbol Rating Unit Supply voltage V CC to 5.5 V Input voltage V IN 0 to V CC V Output voltage V OUT 0 to V CC V Operating temperature T opr 40 to 85 C Input rise and fall time dt/dv 0 to 100 (V CC = 3.3 ± 0.3 V) 0 to 20 (V CC = 5 ± 0.5 V) ns/v Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either V CC or GND. Electrical Characteristics DC Characteristics Characteristics High-level input voltage Low-level input voltage High-level output voltage Low-level output voltage Input leakage current Quiescent supply current Symbol V IH V IL V OH V OL V IN = V IL V IN = V IH Test Condition Ta = 25 C I OH = 50 μa I OH = 4 ma I OH = 24 ma I OH = 75 ma I OL = 50 μa I OL = 12 ma I OL = 24 ma I OL = 75 ma (Note) (Note) V CC (V) 5.5 5.5 5.5 5.5 Ta = 40 to 85 C Min Typ. Max Min Max 1.50 2.10 3.85 1.9 2.9 4.4 2.58 3.94 0.0 0.0 0.0 0.50 0.90 1.65 0.36 0.36 1.50 2.10 3.85 1.9 2.9 4.4 2.48 3.80 3.85 0.50 0.90 1.65 0.44 0.44 1.65 I IN V IN = V CC or GND 5.5 ± ±1.0 μa I CC V IN = V CC or GND 5.5 4.0 40.0 μa Unit V V V V Note: This spec indicates the capability of driving 50 Ω transmission lines. One output should be tested at a time for a 10 ms maximum duration. 3

AC Characteristics (C L = 50 pf, R L = 500 Ω, input: t r = t f = 3 ns) Characteristics Symbol Test Condition Ta = 25 C Ta = 40 to 85 C V CC (V) Min Typ. Max Min Max Unit Propagation delay t plh 3.3 ± 0.3 5.7 9.8 1.0 11.2 ns time t phl 5.0 ± 0.5 4.3 6.6 1.0 7.5 Input capacitance C IN 5 10 10 pf Power dissipation capacitance C PD (Note) 20 pf Note: C PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: I CC (opr) = C PD V CC f IN + I CC /6 (per gate) 4

Package Dimensions Weight: 0.96 g (typ.) 5

Package Dimensions Weight: 8 g (typ.) 6

Package Dimensions Weight: 0.06 g (typ.) 7

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Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). 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