DISCRETE SEMICONDUCTORS DATA SHEET high commutation September 997
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a plastic envelope intended for use in circuits where high static and BTA5-5B 6B 8B dynamic dv/dt and high di/dt can V DRM Repetitive peak off-state 5 6 8 V occur loads. These devices will voltages commutate the full rated rms current I T(RMS) RMS on-state current 5 5 5 A at the imum rated junction I TSM Non-repetitive peak on-state 9 9 9 A temperature, without the aid of a snubber. current PINNING - TOAB PIN CONFIGURATION SYMBOL PIN DESCRIPTION main terminal main terminal tab T T 3 gate tab main terminal 3 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 34). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -5-6 -8 V DRM Repetitive peak off-state - 6 6 8 V voltages I T(RMS) RMS on-state current full sine wave; - 5 A T mb 9 C I TSM Non-repetitive peak full sine wave; on-state current T j = 5 C prior to surge t = ms - 9 A t = 6.7 ms - 9 A I t I t for fusing t = ms - 8 A s di T /dt Repetitive rate of rise of I TM = 3 A; I G =. A; A/µs on-state current after di G /dt =. A/µs triggering I GM Peak gate current - A V GM Peak gate voltage - 5 V P GM Peak gate power - 5 W P G(AV) Average gate power over any ms -.5 W period T stg Storage temperature -4 5 C T j Operating junction - 5 C temperature Although not recommended, off-state voltages up to 8V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 5 A/µs. September 997 Rev.
THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance full cycle - -. K/W junction to mounting base half cycle - -.4 K/W R th j-a Thermal resistance in free air - 6 - K/W junction to ambient STATIC CHARACTERISTICS T j = 5 C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I GT Gate trigger current V D = V; I T =. A T+ G+ 8 5 T+ G- T- G- 34 5 5 I L Latching current V D = V; I GT =. A T+ G+ T+ G- - - 3 34 6 9 T- G- - 3 6 I H Holding current V D = V; I GT =. A - 3 6 V T On-state voltage I T = 3 A -.3.55 V V GT Gate trigger voltage V D = V; I T =. A -.7.5 V I D Off-state leakage current V D = 4 V; I T =. A; T j = 5 C V D = V DRM() ; T j = 5 C.5 -.4. -.5 V DYNAMIC CHARACTERISTICS T j = 5 C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dv D /dt Critical rate of rise of V DM = 67% V DRM() ; T j = 5 C; 4 - V/µs off-state voltage exponential waveform; gate open circuit di com /dt Critical rate of change of commutating current V DM = 4 V; T j = 5 C; I T(RMS) = 5 A; without snubber; gate open circuit - 44 - A/ms t gt Gate controlled turn-on I TM = 3 A; V D = V DRM() ; I G =. A; - - µs time di G /dt = 5 A/µs Device does not trigger in the T-, G+ quadrant. September 997 3 Rev.
Philips Semiconductors Ptot / W 4 BTA4 Tmb() / C 85 IT(RMS) / A 3 BTA4 3 = 8 9 6 3 95 5 5 5 9 C 5 5 5 5 5 5 3 IT(RMS) / A Fig.. Maximum on-state dissipation, P tot, versus rms on-state current, I T(RMS), where α = conduction angle. -5 5 5 Tmb / C Fig.4. Maximum permissible rms current I T(RMS), versus mounting base temperature T mb. ITSM / A BTA5 IT(RMS) / A 5 BTA4 4 di /dt limit T 3 I T ITSM T time Tj initial = 5 C us us ms ms ms T / s Fig.. Maximum permissible non-repetitive peak on-state current I TSM, versus pulse width t p, for sinusoidal currents, t p ms... surge duration / s Fig.5. Maximum permissible repetitive rms on-state current I T(RMS), versus surge duration, for sinusoidal currents, f = 5 Hz; T mb 9 C. ITSM / A 5 BTA4 I T T I TSM time.6.4 VGT(Tj) VGT(5 C) BT36 Tj initial = 5 C. 5.8.6 Number of cycles at 5Hz Fig.3. Maximum permissible non-repetitive peak on-state current I TSM, versus number of cycles, for sinusoidal currents, f = 5 Hz..4-5 5 5 Fig.6. Normalised gate trigger voltage V GT (T j )/ V GT (5 C), versus junction temperature T j. September 997 4 Rev.
3.5 IGT(Tj) IGT(5 C) BTA6 T+ G+ T+ G- T- G- IT / A 8 Tj = 5 C Tj = 5 C 7 6 5 Vo =.73 V Rs =.5 ohms BTA4 typ.5 4 3.5-5 5 5 Fig.7. Normalised gate trigger current I GT (T j )/ I GT (5 C), versus junction temperature T j..5.5.5 3 VT / V Fig.. Typical and imum on-state characteristic. 3 IL(Tj) IL(5 C) TRIAC Zth j-mb (K/W) BTA4.5 unidirectional bidirectional.5.. P D t p.5 t -5 5 5 Fig.8. Normalised latching current I L (T j )/ I L (5 C), versus junction temperature T j.. us.ms ms ms.s s s tp / s Fig.. Transient thermal impedance Z th j-mb, versus pulse width t p. 3 IH(Tj) IH(5C) TRIAC dicom/dt (A/ms) BTA5.5.5.5-5 5 5 Fig.9. Normalised holding current I H (T j )/ I H (5 C), versus junction temperature T j. 4 6 8 4 Fig.. Typical, critical rate of change of commutating current di com /dt versus junction temperature. September 997 5 Rev.
MECHANICAL DATA Dimensions in mm Net Mass: g 4,5,3 3,7,3,8 5,9 min 5,8 3, not tinned,3 (x) 3,54,54 3, 3,5 min,9 (3x),6,4 Notes. Refer to mounting instructions for TO envelopes.. Epoxy meets UL94 V at /8". Fig.3. TOAB; pin connected to mounting base. September 997 6 Rev.
DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 997 7 Rev.
a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 4, Tel. +6 974 84, Fax. +6 974 839 Austria: Computerstr. 6, A- WIEN, P.O. Box 3, Tel. +43 6 48, Fax. +43 6 Belarus: Hotel Minsk Business Center, Bld. 3, r., Volodarski Str. 6, 5 MINSK, Tel. +375 7 733, Fax. +375 7 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 5th floor, 5 James Bourchier Blvd., 47 SOFIA, Tel. +359 68 9, Fax. +359 68 9 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. + 8 34 738, Fax. + 8 943 87 China/Hong Kong: 5 Hong Kong Industrial Technology Centre, 7 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +85 39 7888, Fax. +85 39 77 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 3, 78 COPENHAGEN V, Tel. +45 33 9 3333, Fax. +45 33 9 395 Finland: Sinikalliontie 3, FIN-63 ESPOO, Tel. +358 9 65 8, Fax. +358 9 658 9 France: 5 Rue Carnot, BP37, 956 SURESNES Cedex, Tel. +33 499 66, Fax. +33 499 647 Germany: Hammerbrookstraße 69, D-97 HAMBURG, Tel. +49 4 353 6, Fax. +49 4 353 63 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, nd floor, 54-D, Dr. Annie Besant Road, Worli, MUMBAI 4 5, Tel. +9 493 854, Fax. +9 493 966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-, JAKARTA 5, Tel. +6 794 4 ext. 5, Fax. +6 794 8 Ireland: Newstead, Clonskeagh, DUBLIN 4, Tel. +353 764, Fax. +353 764 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 853, TEL AVIV 68, Tel. +97 3 645 444, Fax. +97 3 649 7 Italy: PHILIPS SEMICONDUCTORS, Via Casati, 3-5 MONZA (MI), Tel. +39 39 3 6838, Fax +39 39 3 68 Japan: Philips Bldg 3-37, Kohnan -chome, Minato-ku, TOKYO 8-857, Tel. +8 3 374 53, Fax. +8 3 374 557 Korea: Philips House, 6-99 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +8 79 4, Fax. +8 79 45 Malaysia: No. 76 Jalan Universiti, 46 PETALING JAYA, SELANGOR, Tel. +6 3 75 54, Fax. +6 3 757 488 Mexico: 59 Gateway East, Suite, EL PASO, TEXAS 7995, Tel. +9-5 8 34 738, Fax +9-5 8 943 87 Middle East: see Italy Netherlands: Postbus 95, 56 PB EINDHOVEN, Bldg. VB, Tel. +3 4 7 8785, Fax. +3 4 7 88399 New Zealand: Wagener Place, C.P.O. Box 4, AUCKLAND, Tel. +64 9 849 46, Fax. +64 9 849 78 Norway: Box, Manglerud 6, OSLO, Tel. +47 74 8, Fax. +47 74 834 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 6 Valero St. Salcedo Village, P.O. Box 8 MCC, MAKATI, Metro MANILA, Tel. +63 86 638, Fax. +63 87 3474 Poland: Al.Jerozolimskie 95 B, - WARSAW, Tel. +48 57, Fax. +48 57 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 948 MOSCOW, Tel. +7 95 755 698, Fax. +7 95 755 699 Singapore: Lorong, Toa Payoh, SINGAPORE 3976, Tel. +65 35 538, Fax. +65 5 65 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 95-5 Main Road Martindale, 9 JOHANNESBURG, P.O. Box 5888 Newville 4, Tel. +7 47 54, Fax. +7 47 5398 South America: Al. Vicente Pinzon, 73, 6th floor, 4547-3 SÃO PAULO, SP, Brazil, Tel. +55 8 333, Fax. +55 8 38 Spain: Balmes, 87 BARCELONA, Tel. +34 93 3 63, Fax. +34 93 3 47 Sweden: Kottbygatan 7, Akalla, S-6485 STOCKHOLM, Tel. +46 8 5985, Fax. +46 8 5985 745 Switzerland: Allmendstrasse 4, CH-87 ZÜRICH, Tel. +4 488 74 Fax. +4 488 363 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec., TAIPEI, Taiwan Tel. +886 34 886, Fax. +886 34 874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 9/ Sanpavuth-Bangna Road Prakanong, BANGKOK 6, Tel. +66 745 49, Fax. +66 398 793 Turkey: Yukari Dudullu, Org. San. Blg.,.Cad. Nr. 8 86 Umraniye, ISTANBUL, Tel. +9 6 5 5, Fax. +9 6 5 83 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 54 KIEV, Tel. +38 44 64 776, Fax. +38 44 68 46 United Kingdom: Philips Semiconductors Ltd., 76 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 8 73 5, Fax. +44 8 754 84 United States: 8 East Arques Avenue, SUNNYVALE, CA 9488-349, Tel. + 8 34 738, Fax. + 8 943 87 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, BEOGRAD, Tel. +38 6 5344, Fax.+38 63 5777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 8, 56 MD EINDHOVEN, The Netherlands, Fax. +3 4 7 485 Internet: http://www.semiconductors.philips.com Philips Electronics N.V. 999 SCA68 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 35/6//pp8 Date of release: September 997 Document order number: 9397 75 664