BTA4 and BTA/BTB41 Series STANDARD 4A TRIACS MAIN FEATURES: Symbol Value Unit I T(RMS) 4 A G V DRM /V RRM 6 and 8 V A1 A1 I GT (Q1 ) 5 ma G DESCRIPTION Available in high power packages, the BTA/ BTB4-41 series is suitable for general purpose AC power switching. They can be used as an ON/ OFF function in applications such as static relays, heating regulation, water heaters, induction motor starting circuits, welding equipment... or for phase control operation in high power motor speed controllers, soft start circuits... Thanks to their clip assembly technique, they provide a superior performance in surge current handling capabilities. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 25 V RMS) complying with UL standards (File ref.: E81734). A1 G TOP3 Insulated (BTA41) RD91 (BTA4) A1 G TOP3 (BTB41) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit I T(RMS) I TSM RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25 C) RD91 A Tc = 8 C TOP3 4 TOP3 Ins. Tc = 95 C F = 6 Hz t = 16.7 ms 42 A F = 5 Hz t = 2 ms 4 I ² t I ² t Value for fusing tp = 1 ms 88 A ² s di/dt V DSM /V RSM Critical rate of rise of on-state current I G = 2 x I GT, tr 1 ns Non repetitive surge peak off-state voltage F = 12 Hz Tj = 125 C 5 A/µs tp = 1 ms Tj = 25 C V DRM /V RRM + 1 I GM Peak gate current tp = 2 µs Tj = 125 C 8 A P G(AV) Average gate power dissipation Tj = 125 C 1 W V T stg T j Storage junction temperature range Operating junction temperature range - 4 to + 15-4 to + 125 C September 23 - Ed: 5 1/6
ELECTRICAL CHARACTERISTICS (Tj = 25 C, unless otherwise specified) Symbol Test Conditions Quadrant Value Unit I GT (1) I - II - III 5 ma MAX. V D = 12 V R L = 33 Ω IV 1 V GT ALL MAX. 1.3 V V GD V D = V DRM R L = 3.3 kω Tj = 125 C ALL MIN..2 V I H (2) I T = 5 ma MAX. 8 ma I L I G = 1.2 I GT I - III - IV MAX. 7 ma II 16 dv/dt (2) V D = 67 % V DRM gate open Tj = 125 C MIN. 5 V/µs (dv/dt)c (2) (di/dt)c = 2 A/ms Tj = 125 C MIN. 1 V/µs STATIC CHARACTERISTICS Symbol Test Conditions Value Unit V TM (2) I TM = 6 A tp = 38 µs Tj = 25 C MAX. 1.55 V V to (2) Threshold voltage Tj = 125 C MAX..85 V R d (2) Dynamic resistance Tj = 125 C MAX. 1 mω I DRM V DRM = V RRM Tj = 25 C 5 µa MAX. I RRM Tj = 125 C 5 ma Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of referenced to A1 THERMAL RESISTANCES Symbol Parameter Value Unit R th(j-c) Junction to case (AC) RD91 TOP3 Insulated.9 TOP3.6 R th(j-a) Junction to ambient TOP3 TOP3 Insulated 5 C/W C/W PRODUCT SELECTOR Part Number Voltage (xxx) 6 V 8 V Sensitivity Type Package BTA4-xxxB X X 5 ma Standard RD91 BTA/BTB41-xxxB X X 5 ma Standard TOP3 BTB: Non insulated TOP3 package 2/6
ORDERING INFORMATION TRIAC SERIES INSULATION: A: insulated B: non insulated BT A 4 - CURRENT: 4: 4A in RD91 41: 4A in TOP3 VOLTAGE: 6: 6V 8: 8V 6 B SENSITIVITY: B: 5mA OTHER INFORMATION Part Number Marking Weight Base quantity Packing mode BTA4-xxxB BTA4xxxB 2. g 25 Bulk BTA/BTB41-xxxB BTA/BTB41xxxB 4.5 g 12 Bulk Note: xxx= voltage Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle). Fig. 2: RMS on-state current versus case temperature (full cycle). P (W) 5 4 3 2 α 1 α IT(RMS) (A) 5 1 15 2 25 3 35 4 18 IT(RMS) (A) 45 4 35 3 25 2 BTA4/BTB41 BTA41 α = 18 15 1 5 Tc( C) 25 5 75 1 125 3/6
Fig. 3: Relative variation of thermal impedance versus pulse duration. Fig. 4: On-state characteristics (maximum values). 1.E+ K=[Zth/Rth] Zth(j-c) ITM (A) 4 1.E-1 1 Tj max 1.E-2 Zth(j-a) BTA/BTB41 tp (s) 1.E-3 1.E-3 1.E-2 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 Fig. 5: Surge peak on-state current versus number of cycles. 1 Tj=25 C Tj max.: Vto =.85 V Rd = 1 mω VTM (V) 1.5 1. 1.5 2. 2.5 3. 3.5 4. 4.5 5. Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 1 ms, and corresponding value of I²t. 45 4 35 3 25 2 15 1 ITSM (A) Repetitive Tc=7 C Non repetitive Tj initial=25 C t=2ms One cycle 5 Number of cycles 1 1 1 1 ITSM (A), I²t (A²s) 1 1 di/dt limitation: 5A/µs tp (ms) Tj initial=25 C 1.1.1 1. 1. ITSM I²t Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). Fig. 8: Relative variation of critical rate of decrease of main current versus (dv/dt)c (typical values). IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25 C] 2.5 2. IGT 1.5 IH & IL 1..5 Tj( C). -4-2 2 4 6 8 1 12 14 (di/dt)c [(dv/dt)c] / Specified (di/dt)c 2. 1.8 1.6 1.4 1.2 1..8.6 (dv/dt)c (V/µs).4.1 1. 1. 1. 4/6
Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature. (di/dt)c [Tj] / (di/dt)c [Tj specified] 6 5 4 3 2 1 Tj ( C) 25 5 75 1 125 PACKAGE MECHANICAL DATA RD91 (Plastic) DIMENSIONS L2 L1 REF. Millimeters Inches Min. Max. Min. Max. B2 C C2 N2 E3 A1 A C1 N1 F I B1 B A 4. 1.575 A1 29.9 3.3 1.177 1.193 22..867 B 27. 1.63 B1 13.5 16.5.531.65 B2 24..945 C 14..551 C1 3.5.138 C2 1.95 3..77.118 E3.7.9.27.35 F 4. 4.5.157.177 I 11.2 13.6.441.535 L1 3.1 3.5.122.138 L2 1.7 1.9.67.75 N1 33 43 33 43 N2 28 38 28 38 5/6
PACKAGE MECHANICAL DATA TOP3 Ins.(Plastic) REF. Millimeters DIMENSIONS Inches Min. Typ. Max. Min. Typ. Max. A 4.4 4.6.173.181 B 1.45 1.55.57.61 C 14.35 15.6.565.614 D.5.7.2.28 E 2.7 2.9.16.114 F 15.8 16.5.622.65 G 2.4 21.1.815.831 H 15.1 15.5.594.61 J 5.4 5.65.213.222 K 3.4 3.65.134.144 L 4.8 4.17.161.164 P 1.2 1.4.47.55 R 4.6.181 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 6/6 The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners. 23 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States www.st.com