BTA8X series B GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a full pack, plastic envelope intended for use in motor control BTA8X- 5B 6B 8B circuits where high static and dynamic V DRM Repetitive peak off-state 5 6 8 V dv/dt and high di/dt can occur. These voltages devices will commutate the full rated I T(RMS) RMS on-state current 8 8 8 A rms current at the imum rated I TSM Non-repetitive peak 65 65 65 A junction temperature, without the aid of a snubber. on-state current PINNING - SOT86A PIN CONFIGURATION SYMBOL PIN DESCRIPTION main terminal main terminal case T T gate case isolated G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 4). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -6-6 -8 V DRM Repetitive peak off-state voltages - 6 6 8 V I T(RMS) RMS on-state current full sine wave; T hs 7 C - 8 A I TSM Non-repetitive peak full sine wave; on-state current T j = 5 C prior to surge t = ms t = 6.7 ms - - 65 7 A A I t I t for fusing t = ms - A s di T /dt Repetitive rate of rise of I TM = A; I G =. A; A/µs on-state current after di G /dt =. A/µs triggering I GM Peak gate current - A V GM Peak gate voltage - 5 V P GM Peak gate power - 5 W P G(AV) Average gate power over any ms period -.5 W T stg Storage temperature -4 5 C T j Operating junction temperature - 5 C Although not recommended, off-state voltages up to 8V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/µs. September 997 Rev.
BTA8X series B ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 5 C unless otherwise specified V isol R.M.S. isolation voltage from all three terminals to external f = 5-6 Hz; sinusoidal waveform; - 5 V heatsink R.H. 65% ; clean and dustfree C isol Capacitance from T to external heatsink f = MHz - - pf THERMAL RESISTANCES R th j-hs Thermal resistance full or half cycle junction to heatsink with heatsink compound - - 4.5 K/W without heatsink compound - - 6.5 K/W R th j-a Thermal resistance in free air - 55 - K/W junction to ambient STATIC CHARACTERISTICS T j = 5 C unless otherwise stated I GT Gate trigger current V D = V; I T =. A T+ G+ T+ G- 8 5 5 ma ma T- G- 4 5 ma I L Latching current V D = V; I GT =. A T+ G+ - 6 ma T+ G- - 4 9 ma T- G- - 6 ma I H Holding current V D = V; I GT =. A - 6 ma V T On-state voltage I T = A -..65 V V GT Gate trigger voltage V D = V; I T =. A -.7.5 V V D = 4 V; I T =. A; T j = 5 C.5.4 - V I D Off-state leakage current V D = V DRM() ; T j = 5 C -..5 ma DYNAMIC CHARACTERISTICS T j = 5 C unless otherwise stated dv D /dt Critical rate of rise of V DM = 67% V DRM() ; T j = 5 C; 4 - V/µs di com /dt off-state voltage exponential waveform; gate open circuit Critical rate of change of V DM = 4 V; T j = 5 C; I T(RMS) = 8 A; commutating current without snubber; gate open circuit - 4 - A/ms t gt Gate controlled turn-on time I TM = A; V D = V DRM() ; I G =. A; di G /dt = 5 A/µs - - µs Device does not trigger in the T-, G+ quadrant. September 997 Rev.
Philips Semiconductors BTA8X series B Ptot / W BT7 Ths() / C 7 = 8 IT(RMS) / A BT7X 8 6 9 6 8 89 98 8 6 7 C 4 7 4 6 5 4 6 8 IT(RMS) / A Fig.. Maximum on-state dissipation, P tot, versus rms on-state current, I T(RMS), where α = conduction angle. -5 5 5 Ths / C Fig.4. Maximum permissible rms current I T(RMS), versus heatsink temperature T hs. ITSM / A BTA8 IT(RMS) / A 5 BT7 di /dt limit T 5 I T I TSM T time 5 Tj initial = 5 C us us ms ms ms T / s Fig.. Maximum permissible non-repetitive peak on-state current I TSM, versus pulse width t p, for sinusoidal currents, t p ms... surge duration / s Fig.5. Maximum permissible repetitive rms on-state current I T(RMS), versus surge duration, for sinusoidal currents, f = 5 Hz; T hs 7 C. ITSM / A 8 7 6 BT7 IT T ITSM time.6.4 VGT(Tj) VGT(5 C) BT6 5 Tj initial = 5 C. 4.8.6 Number of cycles at 5Hz Fig.. Maximum permissible non-repetitive peak on-state current I TSM, versus number of cycles, for sinusoidal currents, f = 5 Hz..4-5 5 5 Fig.6. Normalised gate trigger voltage V GT (T j )/ V GT (5 C), versus junction temperature T j. September 997 Rev.
BTA8X series B.5 IGT(Tj) IGT(5 C) BTA T+ G+ T+ G- T- G- IT / A 5 Tj = 5 C Tj = 5 C Vo =.64 V Rs =.78 Ohms BT7 typ 5.5.5 5-5 5 5 Fig.7. Normalised gate trigger current I GT (T j )/ I GT (5 C), versus junction temperature T j..5.5.5 VT / V Fig.. Typical and imum on-state characteristic..5.5 IL(Tj) IL(5 C) TRIAC Zth j-hs (K/W) BT7 with heatsink compound without heatsink compound unidirectional bidirectional. P D t p.5-5 5 5 Fig.8. Normalised latching current I L (T j )/ I L (5 C), versus junction temperature T j.. us.ms ms ms.s s s tp / s Fig.. Transient thermal impedance Z th j-hs, versus pulse width t p. t IH(Tj) IH(5C) TRIAC dicom/dt (A/ms) BTA8.5.5.5-5 5 5 Fig.9. Normalised holding current I H (T j )/ I H (5 C), versus junction temperature T j. 4 6 8 4 Fig.. Typical, critical rate of change of commutating current di com /dt versus junction temperature. September 997 4 Rev.
BTA8X series B MECHANICAL DATA Dimensions in mm Net Mass: g... 4.6.9 Recesses (x).5.8. depth. not tinned.8 5.8. 9. seating plane 6.4 5.8.5.5 min..4 M 5.8.54.5.6.5.. (x).9.7 Notes. Refer to mounting instructions for F-pack envelopes.. Epoxy meets UL94 V at /8". Fig.. SOT86A; The seating plane is electrically isolated from all terminals. September 997 5 Rev.
BTA8X series B DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 4). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 997 6 Rev.