BTA16-xxxSW BTB16-xxxSW HIGH PERFORMANCE LOGIC LEVEL TRIACS FEATURES IT(RMS) = 16A LOGIC LEVEL TRIGGERING: IGT ma HIGH SURGE CAPABILITY DESCRIPTION The BTA/BTB16-xxxSW triacs are using a high performance glass passivated technology. These triacs are designed for applications requiring high inrush current performances such as fridge motor control, magnetron supply of microwave ovens, halogen range cookers, etc...). The high gate sensitivity makes them perfectly suited for direct gate triggering by microcontrollers and other logic circuits. TO22AB G A2 A1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit I T(RMS) RMS on-state current BTA Tc = 8 C 16 A (36 conduction angle) BTB Tc = C I TSM Non repetitive surge peak on-state current tp = 8.3 ms 17 A ( Tj initial = 2 C ) tp = ms 16 I 2 t I 2 t value for fusing tp = ms 128 A 2 s di/dt Critical rate of rise of on-state current Repetitive A/µs Gate supply : I G = 2mA, tr ns F = Hz Tstg Tj Tl Storage and operating junction temperature range - 4 to + - 4 to + 12 Maximum lead temperature for soldering during s at 4.mm from case C C 26 C Symbol Parameter BTA / BTB16-xxxSW Unit 6 7 V DRM V RRM V DSM Repetitive peak off-state voltage Tj = 12 C Non repetitive surge peak off-state voltage Tj = 12 C Tp µs 6 7 V 7 8 V May 1999 - Ed: 4C 1/
THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-a) Junction to ambient 6 C/W Rth (j-c) DC Junction to case for DC BTA 2.8 C/W BTB 1.6 Rth (j-c) AC Junction to case for AC 36 conduction angle ( F= Hz) BTA 2.1 C/W BTB 1.2 GATE CHARACTERISTICS (maximum values) P G (AV) = 1W P GM = W (tp = 2 µs) I GM = 4A (tp = 2 µs). ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant BTA/BTB16-xxxSW Unit Value I GT VD=12V (DC) R L=33Ω Tj=2 C I-II-III MAX ma V GT VD =12V (DC) R L =33Ω Tj=2 C I-II-III MAX 1.3 V V GD VD =V DRM R L =3.3kΩ Tj=12 C I-II-III MIN.2 V I L IG =1.2 I GT Tj=2 C I-III MAX 3 ma II MAX 4 I H * I T= ma gate open Tj=2 C MAX ma V TM * I TM= 22.A tp= 38µs Tj=2 C MAX 1. V I DRM I RRM V D = V DRM Tj=2 C MAX µa V R = V RRM Tj=12 C MAX 2 ma dv/dt * V D=67%V DRM Tj=12 C MIN 2 V/µs gate open (di/dt)c * (dv/dt)c =.1V/µs Tj=12 C MIN 3. A/ms Without snubber Tj=12 C MIN 1 * For either polarity of electrode A2 voltage with reference to electrode A1. ORDERING INFORMATION BTB 16-6 S W TRIAC : BTB : UNINSULATED BTA : INSULATED CURRENT VOLTAGE SENSITIVITY 3 QUADRANTS 2/
Fig.1 : Maximum power dissipation versus RMS on-state current (resistive load). Fig.2-1 : Correlation between maximum power dissipation and maximum allowable temperatures (T amb and T case ) for different thermal resistances (BTA). 2 P(W) α = 18 P(W) Tcase ( C) 2 Rth=2 C/W Rth=1 C/W Rth= C/W 8 α = 12 Rth=4 C/W 9 α = 9 α = 6 α α = 3 α I T(RMS) (A) 2 4 6 8 12 14 16 18 1 α =18 Tamb( C) 12 2 4 6 8 12 14 Fig.2-2 : Correlation between maximum power dissipation and maximum allowable temperatures (T amb and T case ) for different thermal resistances heatsink + contact (BTB). P(W) 2 Rth=4 C/W Rth=2 C/W Rth=1 C/W Rth= C/W Tcase ( C) 1 α =18 Tamb( C) 12 2 4 6 8 12 14 Fig.3 : RMS on-state current versus case temperature. I T(RMS) (A) 18 16 14 12 α =18 BTB BTA 8 6 4 2 Tcase( C) 2 7 12 Fig.4 : Relative variation of thermal impedance versus pulse duration. Fig. : Relative variation of gate trigger current and holding current versus junction temperature (typical values). 1. K=[Zth/Rth] 2. I GT,I H [Tj]/I GT,I H [Tj=2 C] Zth(j-c) 2.. Zth(j-a) 1. 1. IH IGT tp(s).1 1E-3 1E-2 1E-1 1E+ 1E+1 1E+2 E+2. Tj( C). -4-2 2 4 6 8 12 14 3/
Fig.6 : Non Repetitive surge peak on-state current versus number of cycles. Fig 7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp ms, and corresponding value of I 2 t. I (A) 14 TSM 12 8 6 4 Tj initial=2 C F=Hz 2 I TSM(A),I²t(A²s) ITSM Tj initial=2 C 2 Number of cycles 1 I²t tp(ms) 1 2 Fig.8 : On-state characteristics (maximum values). 2 I TM(A) Tj=Tj max. Tj max.: Vto=.8V Rt=2m Ω Tj=2 C V TM(V) 1.. 1. 1. 2. 2. 3. 3. 4. 4.. 4/
PACKAGE MECHANICAL DATA TO22AB Plastic DIMENSIONS B b2 C REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A.2.9.98.62 I L F a1 3.7.147 a2 13. 14..11.1 B..4.393.49 A b1.61.88.24.34 b2 1.23 1.32.48.1 l4 C 4.4 4.6.173.181 c1.49.7.19.27 a1 c2 c2 2.4 2.72.94.7 e 2.4 2.7.94.6 l3 l2 a2 F 6.2 6.6.244.29 I 3.7 3.8.147.1 I4.8 16.4 16.8.622.646.661 L 2.6 2.9.4.116 b1 e M c1 l2 1.14 1.7.44.66 l3 1.14 1.7.44.66 M 2.6.2 MARKING Type BTA16-6SW BTA16-7SW BTB16-6SW BTB16-7SW Weight : 2.1g Marking BTA16 6SW BTA16 7SW BTB16 6SW BTB16 7SW Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com /