N-Channel 6 V (D-S) Super Junction Power MOSFET DTP63SJ PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.35 at V GS = V 3 6.4 at V GS = 4.5 V FEATURES 75 C Junction Temperature TrenchFET II Power MOSFET Material categorization: TO-AB D G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T C = 5 C, unless otherwise noted) Parameter Symbol Limit Unit Gate-Source Voltage V GS ± V T Continuous Drain Current (T J = 75 C) b C = 5 C 3 I D T C = C a Pulsed Drain Current I DM 48 Continuous Source Current (Diode Conduction) I S a Avalanche Current I AS Single Avalanche Energy (Duty Cycle %) L =. mh E AS 5 mj T C = 5 C 8 Maximum Power Dissipation P D W T A = 5 C 3 b, 8.5 b, c Operating Junction and Storage Temperature Range T J, T stg - 55 to 75 C A THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient a t sec 5 8 R thja Steady State 4 5 C/W Maximum Junction-to-Case R thjc.85. Notes: a. Package limited. b. Surface mounted on " x " FR4 board. c. t s.
SPECIFICATIONS (T J = 5 C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. a Max. Unit Static Drain-Source Breakdown Voltage V DS V GS = V, I D = 5 µa 6 Gate Threshold Voltage V GS(th) V DS = V GS, I D = 5 µa Gate-Body Leakage I GSS V DS = V, V GS = ± V ± na Zero Gate Voltage Drain Current I DSS V DS = 48 V, V GS = V, T J = 5 C 5 V DS = 48 V, V GS = V Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width 3 µs, duty cycle %. c. Independent of operating temperature. V DS = 48 V, V GS = V, T J = 75 C 5 On-State Drain Current b I D(on) V DS = 5 V, V GS = V 3 A Drain-Source On-State Resistance b R DS(on) V GS = V, I D = A.35.4 V GS = V, I D = A, T J = 5 C.4.5 V GS = V, I D = A, T J = 75 C.45.55 V GS = 4.5 V, I D = 5 A.4.5 Forward Transconductance b g fs V DS = 48 V, I D = A 5 S Dynamic Input Capacitance C iss Output Capacitance C oss V GS = V, V DS = 48 V, f = MHz 67 Reverse Transfer Capacitance C rss 3 Total Gate Charge c Q g V DS = 48 V, V GS = V, I D = A 67 78 Gate-Source Charge c Q gs Gate-Drain Charge c Q gd 8.5 Turn-On Delay Time c t d(on) Rise Time c t r V DD = 48 V, R L =.6 5 5 Turn-Off Delay Time c t d(off) I D A, V GEN = V, R g =.5 55 7 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 395 Fall Time c t f Source-Drain Diode Ratings and Characteristics (T C = 5 C) DTP63SJ Pulsed Current I SM 3 A Diode Forward Voltage V SD I F = A, V GS = V. V Reverse Recovery Time t rr I F = A, di/dt = A/µs 45 ns.5 V µa pf nc ns
TYPICAL CHARACTERISTICS (5 C unless noted) DTP63SJ 8 V GS = thru 5 V 8 6 4 4 V V, 3 V 4 6 8 V DS - Drain-to-Source Voltage (V) 6 4 T C = 5 C 5 C - 55 C 3 4 5 V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics. - Transconductance (S) g fs 8 6 4 T C = - 55 C 5 C 5 C R DS(on) -.8.6.4. V GS = 4.5 V V GS = V 3 4 5 Transconductance 4 6 8 On-Resistance vs. Drain Current 6 C - Capacitance (pf) 5 4 3 5 5 C iss C oss C rss 3 4 5 6 V DS - Drain-to-Source Voltage (V) Capacitance - Gate-to-Source Voltage (V) V GS 8 6 4 V DS = 3 V I D = A 5 3 45 6 75 Q g - Total Gate Charge (nc) Gate Charge 3
TYPICAL CHARACTERISTICS (5 C unless noted) DTP63SJ.5 R DS(on) - On-Resistance (Normalized)..5..5 V GS = V I D = A - Source Current (A) I S T J = 5 C T J = 5 C. - 5-5 5 5 75 5 5 75 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature.3.6.9..5 V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 4
THERMAL RATINGS DTP63SJ 5 5 75 5 Limited by R DS(on)* µs µs ms ms ms DC 5. T C = 5 C Single Pulse 5 5 75 5 5 75 T A - Ambient Temperature ( C) Maximum Drain Current vs. Ambient Temperature.. V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area Duty Cycle =.5 Normalized Effective Transient Thermal Impedance....5. Single Pulse. - 4-3 - - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 5
Package Information TO-AB D L H() Q L() E 3 M * b() Ø P A F MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 4.5 4.65.67.83 b.69..7.4 b()..73.47.68 c.36.6.4.4 D 4.85 5.49.585.6 E.4.5.395.44 e.4.67.95.5 e() 4.88 5.8.9.8 F.4.4.45.55 H() 6.9 6.48.4.55 J().4.9.95.5 L 3.35 4..56.55 L() 3.3 3.8.3.5 Ø P 3.54 3.94.39.55 Q.6 3...8 ECN: X-8-Rev. N, 8-Oct- DWG: 547 Notes * M =.3 mm to.6 mm (dimension including protrusion) Heatsink hole for HVM e b C e() J()
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