BC856ALT1 Series. PNP Silicon. Pb Free Packages are Available. Features. MAXIMUM RATINGS (T A = 25 C unless otherwise noted)

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Preferred Devices General Purpose Transistors PNP Silicon Features PbFree Packages are Available COLLECTOR MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit Collector-Emitter oltage BC856 BC857 CEO 65 45 BC858, BC859 Collector-Base oltage BC856 BC857 BC858, BC859 CBO 8 5 EmitterBase oltage EBO 5. Collector Current Continuous I C madc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board, (Note ) Derate above 25 C Thermal Resistance, JunctiontoAmbient Total Device Dissipation Alumina Substrate, (Note 2) Derate above 25 C Thermal Resistance, JunctiontoAmbient P D 225.8 mw mw/ C R JA 556 C/W P D 2.4 mw mw/ C R JA 47 C/W Junction and Storage Temperature T J, T stg 55 to +5 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.. FR5 = x.75 x.62 in. 2. Alumina =.4 x. x.24 in 99.5% alumina. BASE 2 EMITTER 2 SOT2 CASE 8 STYLE 6 MARKING DIAGRAM xx M xx = Device Code xx = (Refer to page 5) M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 25 September, 25 Rev. 9 Publication Order Number: BC856ALT/D

ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown oltage (BR)CEO 65 (I C = ma) BC857 Series 45 Collector Emitter Breakdown oltage (I C = A, EB = ) BC857A, BC857B Only Collector Base Breakdown oltage (I C = A) BC857 Series Emitter Base Breakdown oltage (I E = A) BC857 Series Collector Cutoff Current ( CB = ) Collector Cutoff Current ( CB =, T A = 5 C) ON CHARACTERISTICS DC Current Gain BC856A, BC857A, BC858A (I C = A, CE = 5. ) BC856B, BC857B, BC858B BC857C, BC858C (BR)CES (BR)CBO 8 5 8 5 (BR)EBO 5. 5. 5. I CBO h FE 9 5 27 5 4. na A (I C = ma, CE = 5. ) BC856A, BC857A, BC858A BC856B, BC857B, BC858B, BC859B BC857C, BC858C, BC859C 25 22 42 8 29 52 25 475 8 Collector Emitter Saturation oltage (I C = ma, I B =.5 ma) (I C = ma, I B = 5. ma) Base Emitter Saturation oltage (I C = ma, I B =.5 ma) (I C = ma, I B = 5. ma) Base Emitter On oltage (I C = ma, CE = 5. ) (I C = ma, CE = 5. ) SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (I C = ma, CE = 5. dc, f = MHz) Output Capacitance ( CB =, f = MHz) CE(sat) BE(sat) BE(on).6.7.9..65.75.82 f T MHz C ob 4.5 pf Noise Figure (I C = ma, CE = 5. dc, R S = k, f = khz, BW = 2 Hz) BC856, BC857, BC858 Series BC859 Series NF 4. db 2

BC857/BC858/BC859 hfe, NORMALIZED DC CURRENT GAIN.5.7.5. CE = I C, COLLECTOR CURRENT (madc), OLTAGE (OLTS).9.8.7.6.5.4.. BE(sat) @ I C /I B = BE(on) @ CE = CE(sat) @ I C /I B =.5 5. 2 5 2..5 5. 2 5 I C, COLLECTOR CURRENT (madc) Figure. Normalized DC Current Gain Figure 2. Saturation and On oltages CE, COLLECTOREMITTER OLTAGE ().6.2.8.4 I C = ma I C = 2 ma I C = 5 ma.2. I B, BASE CURRENT (ma) I C = 2 ma I C = ma 2, TEMPERATURE COEFFICIENT (m/ C) B θ.2.6 2.4 2.8 55 C to +25 C Figure. Collector Saturation Region Figure 4. BaseEmitter Temperature Coefficient C, CAPACITANCE (pf) 7. 5...4 C ib C ob.6 4. 6. 2 4 R, REERSE OLTAGE (OLTS) f, T CURRENTGAIN BANDWIDTH PRODUCT (MHz) 4 2 5 8 6 4 2.5 I C, COLLECTOR CURRENT (madc) CE =. 5. 2 5 Figure 5. Capacitances Figure 6. CurrentGain Bandwidth Product

BC856 h FE, DC CURRENT GAIN (NORMALIZED).5 CE = 5., OLTAGE (OLTS).8.6.4 BE(sat) @ I C /I B = BE @ CE = 5. CE(sat) @ I C /I B =. 5. 2 5 2 Figure 7. DC Current Gain.5 5. 2 5 2 Figure 8. On oltage CE, COLLECTOREMITTER OLTAGE (OLTS).6.2.8.4 I C = ma 2 ma 5 ma.2.5..5 5. I B, BASE CURRENT (ma) ma Figure 9. Collector Saturation Region 2 ma 2, TEMPERATURE COEFFICIENT (m/ C) B θ.4.8 2.2 2.6 B for BE 55 C to 25 C..5 5. 2 5 2 Figure. BaseEmitter Temperature Coefficient C, CAPACITANCE (pf) 4 2 C ib 8. 6. C ob 4...5 5. 2 5 R, REERSE OLTAGE (OLTS) f, T CURRENTGAIN BANDWIDTH PRODUCT 5 2 5 2 CE = 5. Figure. Capacitance Figure 2. CurrentGain Bandwidth Product 4

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED).7.5...7.5..2.. D =.5..5 SINGLE PULSE SINGLE PULSE.5 5. 2 5 2 5 k k 5. k k t, TIME (ms) P (pk) t t2 DUTY CYCLE, D = t /t 2 Z JC (t) = r(t) R JC R JC = 8. C/W MAX Z JA (t) = r(t) R JA R JA = 2 C/W MAX D CURES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T J(pk) T C = P (pk) R JC (t) Figure. Thermal Response 2 5 5. s BC558, BC559 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT ms 5. 45 65 CE, COLLECTOREMITTER OLTAGE () The safe operating area curves indicate I C CE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 4 is based upon T J(pk) = 5 C; T C or T A is variable depending upon conditions. Pulse curves are valid for duty cycles to % provided T J(pk) 5 C. T J(pk) may be calculated from the data in Figure. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. Figure 4. Active Region Safe Operating Area ORDERING INFORMATION BC856ALT BC856ALTG BC856ALT BC856ALTG Device Marking Package Shipping A SOT2 SOT2 (PbFree) SOT2 SOT2 (PbFree) BC856BLT SOT2 BC856BLTG BC856BLT B SOT2 (PbFree) SOT2 BC856BLTG SOT2 (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. 5

ORDERING INFORMATION BC857ALT BC857ALTG BC857BLT BC857BLTG BC857BLT BC857BLTG Device Marking Package Shipping E F SOT2 SOT2 (PbFree) SOT2 SOT2 (PbFree) SOT2 SOT2 (PbFree) BC857CLT SOT2 BC857CLTG G SOT2 (PbFree) BC858ALT SOT2 BC858ALTG J SOT2 (PbFree) BC858BLT SOT2 BC858BLTG K SOT2 (PbFree) BC858BLT SOT2 BC858BLTG SOT2 (PbFree) BC858CLT SOT2 BC858CLTG L SOT2 (PbFree) BC858CLT SOT2 BC858CLTG SOT2 (PbFree) BC859BLT SOT2 BC859BLTG BC859BLT 4B SOT2 (PbFree) SOT2 BC859BLTG SOT2 (PbFree) BC859CLT SOT2 BC859CLTG BC859CLT 4C SOT2 (PbFree) SOT2 BC859CLTG SOT2 (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. 6

PACKAGE DIMENSIONS SOT2 (TO26) CASE 88 ISSUE AM E D HE SEE IEW C NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: INCH.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 8 THRU 7 AND 9 OBSOLETE, NEW STANDARD 88. A A 2 e b L L IEW C 5 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A.89..5.4.44 A..6...2.4 b.7.44.5.5.8.2 c.9..8..5.7 D 2.8 2.9.4..4.2 E.2..4.47.5.55 e.78.9 4.7.75.8 L...4.8.2 L.5.54.69.4.2.29 HE 2. 2.4 2.64.8.94.4 STYLE 6: PIN. BASE 2. EMITTER. COLLECTOR SOLDERING FOOTPRINT*.95.7.95.7.79.9.5.8. SCALE : mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 62, Phoenix, Arizona 85822 USA Phone: 4882977 or 84486 Toll Free USA/Canada Fax: 48829779 or 844867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 29 Kamimeguro, Meguroku, Tokyo, Japan 55 Phone: 857785 7 ON Semiconductor Website: Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. BC856ALT/D