STGFW20H65FB, STGW20H65FB, STGWT20H65FB

STGFW20H65FB, STGW20H65FB, STGWT20H65FB Trench gate field-stop IGBT, HB series 650 V, 20 A high speed Datasheet - production data TO-247 TAB 3 2 1 TO-3P 1 1 2 3 2 1 TO-3PF Figure 1. Internal schematic diagram C (2, TAB) 3 Features Maximum junction temperature: T J = 175 C High speed switching series Minimized tail current V CE(sat) = 1.55 V (typ.) @ I C = 20 A Tight parameters distribution Safe paralleling Low thermal resistance Lead free package Applications Photovoltaic inverters High frequency converters Description G (1) E (3) These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order codes Marking Package Packaging STGFW20H65FB GFW20H65FB TO-3PF Tube STGW20H65FB GW20H65FB TO-247 Tube STGWT20H65FB GWT20H65FB TO-3P Tube August 2014 DocID026826 Rev 1 1/20 This is information on a product in full production. www.st.com 20

Contents STGFW20H65FB, STGW20H65FB, STGWT20H65FB Contents 1 Electrical ratings............................................ 3 2 Electrical characteristics..................................... 4 2.1 Electrical characteristics (curve)................................. 6 3 Test circuits.............................................. 12 4 Package mechanical data.................................... 13 4.1 TO-3PF, STGFW20H65FB.................................... 13 4.2 TO-247, STGW20H65FB..................................... 15 4.3 TO-3P, STGWT20H65FB..................................... 17 5 Revision history........................................... 19 2/20 DocID026826 Rev 1

STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Unit Symbol Parameter TO-247 TO-3P TO-3PFP V CES Collector-emitter voltage (V GE = 0) 650 V I C Continuous collector current at T C = 25 C 40 A I C Continuous collector current at T C = 0 C 20 A (1) I CP Pulsed collector current 80 A V GE Gate-emitter voltage ±20 V P TOT Total dissipation at T C = 25 C 168 52 W T STG Storage temperature range - 55 to 150 C T J Operating junction temperature - 55 to 175 C 1. Pulse width limited by maximum junction temperature. Table 3. Thermal data Value Symbol Parameter TO-3PF TO-247 TO-3P Unit R thjc Thermal resistance junction-case 2.9 0.9 C/W R thja Thermal resistance junction-ambient 50 C/W DocID026826 Rev 1 3/20

Electrical characteristics STGFW20H65FB, STGW20H65FB, STGWT20H65FB 2 Electrical characteristics T J = 25 C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)CES Collector-emitter breakdown voltage (V GE = 0) I C = 2 ma 650 V V GE = 15 V, I C = 20 A 1.55 2 V CE(sat) Collector-emitter saturation voltage V GE = 15 V, I C = 20 A T J = 125 C V GE = 15 V, I C = 20 A T J = 175 C V GE(th) Gate threshold voltage V CE = V GE, I C = 1 ma 5 6 7 V I CES Collector cut-off current (V GE = 0) V CE = 650 V 25 µa I GES Gate-emitter leakage current (V CE = 0) 1.65 1.75 V GE = ± 20 V 250 na V Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit C ies Input capacitance - 2764 - pf C oes Output capacitance V CE = 25 V, f = 1 MHz, - 80 - pf C res V GE = 0 Reverse transfer capacitance - 60 - pf Q g Total gate charge - 120 - nc Q ge Gate-emitter charge V CC = 520 V, I C = 20 A, V GE = 15 V, see Figure 27-20 - nc Q gc Gate-collector charge - 50 - nc 4/20 DocID026826 Rev 1

STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical characteristics Table 6. Switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time - 30 - ns t r Current rise time - 11 - ns (di/dt) on Turn-on current slope - 1400 - A/µs t V CE = 400 V, I C = 20 A, d(off) Turn-off delay time 139 - ns R G = Ω, V GE = 15 V, t f Current fall time see Figure 26-20 - ns E (1) on Turn-on switching losses - 77 - µj (2) E off Turn-off switching losses - 170 - µj E ts Total switching losses - 247 - µj t d(on) Turn-on delay time - 29 - ns t r Current rise time - 12 - ns (di/dt) on Turn-on current slope - 1352 - A/µs t d(off) t f Turn-off delay time Current fall time V CE = 400 V, I C = 20 A, R G = Ω, V GE = 15 V, T J = 175 C, see Figure 26 - - 147 38 - - ns ns E (1) on Turn-on switching losses - 88 - µj E (2) off Turn-off switching losses - 353 - µj E ts Total switching losses - 441 - µj 1. Energy losses include reverse recovery of the external diode. Turn-on times and energy have been measured applying as freewheeling an external SiC diode STPSC206W 2. Turn-off losses include also the tail of the collector current. DocID026826 Rev 1 5/20

Electrical characteristics STGFW20H65FB, STGW20H65FB, STGWT20H65FB 2.1 Electrical characteristics (curve) Figure 2. Output characteristics (T J = 25 C) IC (A) VGE 70 =15 V 13V 11V 60 50 40 30 20 GIPG2608201418FSR 9V 7V 0 0 1 2 3 4 VCE(V) Figure 4. Transfer characteristics IC (A) 25 C 70 VCE = V 175 C 60 GIPG260820141127FSR Figure 3. Output characteristics (T J = 175 C) IC (A) 80 60 50 40 30 20 VGE =15 V 11V GIPG260820141120FSR 13V 9V 7V 0 0 1 2 3 4 VCE(V) Figure 5. Collector current vs. case temperature for TO-247 and TO-3P IC (A) 40 30 GIPG260820141136FSR 50 40 30 20 7 8 9 VGE(V) Figure 6. Collector current vs. case temperature for TO-3PF 20 VGE 15V, TJ 175 C 0 0 25 50 75 0 125 150 TC( C) Figure 7. V CE(sat) vs. junction temperature IC (A) 25 GIPG260820141147FSR VCE(sat) (V) 2.2 VGE= 15V GIPG260820141153FSR IC= 40A 20 2.0 15 1.8 IC= 20A 1.6 5 VGE 15V, TJ 175 C 0 0 25 50 75 0 125 150 TC( C) 1.4 IC= A 1.2-50 0 50 0 150 TJ( C) 6/20 DocID026826 Rev 1

STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical characteristics Figure 8. Power dissipation vs. case temperature for TO-247 and TO-3P Figure 9. Power dissipation vs. case temperature for TO-3PF Ptot (W) 160 140 GIPG280120141359FSR Ptot (W) 50 GIPG260820141204FSR 120 40 0 80 30 60 20 40 20 VGE 15V, TJ 175 C 0 0 25 50 75 0 125 150 175 TC( C) Figure. Forward bias safe operating area for TO-247 and TO-3P VGE 15V, TJ 175 C 0 0 25 50 75 0 125 150 175 TC( C) Figure 11. Forward bias safe operating area for TO-3PF IC (A) GIPG260820141333FSR IC (A) GIPG260820141339FSR μs μs 0 μs 0 μs 1 1 ms 1 1 ms (single pulse T C = 25 C, TJ 175 C; VGE=15V) (single pulse T C = 25 C, TJ 175 C; VGE=15V) 0.1 1 0 VCE(V) Figure 12. Collector current vs. switching frequency for TO-247 and TO-3P 0.1 1 0 VCE(V) Figure 13. Collector current vs. switching frequency for TO-3PF Ic [A] GIPG260820141342FSR Ic [A] GIPG260820141347FSR 60 Tc=80 C 20 Tc=80 C 50 40 Tc=0 C 15 Tc=0 C 30 20 rectangular current shape, (duty cycle=0.5, V CC = 400V, R G=4.7 Ω, V GE = 0/15 V, T J =175 C) 0 1 f [khz] 5 rectangular current shape, (duty cycle=0.5, V CC = 400V, R G=4.7 Ω, V GE = 0/15 V, T J =175 C) 0 1 f [khz] DocID026826 Rev 1 7/20

Electrical characteristics STGFW20H65FB, STGW20H65FB, STGWT20H65FB Figure 14. Normalized V GE(th) vs. junction temperature Figure 15. Normalized V (BR)CES vs. junction temperature VGE(th) (norm) 1.0 VCE= VGE IC= 1mA AM16060v1 V(BR)CES (norm) 1.1 IC= 1mA AM16059v1 0.9 0.8 1.0 0.7 0.6-50 0 50 0 150 TJ( C) Figure 16. Switching losses vs temperature 0.9-50 0 50 0 150 TJ( C) Figure 17. Switching losses vs gate resistance E (μj) GIPG260820141404FSR E (μj) GIPG260820141408FSR 350 VCC= 400V, VGE= 15V Rg= Ω, IC= 20A EOFF 550 450 VCC= 400V, VGE= 15V IC= 20A, TJ= 175 C EOFF 250 350 EON 150 EON 250 150 50 20 40 60 80 0 120 140 160 TJ( C) 50 3 17 24 31 38 45 RG(Ω) Figure 18. Switching losses vs collector current Figure 19. Switching losses vs collector emitter voltage E (μj) GIPG260820141358FSR E (μj) GIPG260820141413FSR 600 VCC= 400V, VGE= 15V Rg= Ω, TJ= 175 C) EOFF 400 TJ= 175 C, VGE= 15V Rg= Ω, IC= 20A EOFF 300 400 200 EON 200 EON 0 0 0 IC(A) 20 30 40 0 150 VCE(V) 250 350 450 8/20 DocID026826 Rev 1

STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical characteristics Figure 20. Switching times vs collector current Figure 21. Switching times vs gate resistance t(ns) 0 tdoff GIPG260820141417FSR t(ns) 0 TJ= 175 C, VGE= 15V IC= 20A, VCC= 400V tf tdoff GIPG260820141422FSR tdon tdon tf tr TJ= 175 C, VGE= 15V Rg= Ω, VCC= 400V tr 1 0 20 30 40 IC(A) Figure 22. Capacitance variations 0 20 30 40 Rg(Ω) Figure 23. Gate charge vs. gate-emitter voltage C(pF) 000 00 GIPG260820141434FSR Cies VGE (V) 16 14 12 VCC= 520V, IC= 20A IG= 1mA GIPG260820141445FSR 8 0 6 Coes Cres 4 2 0.1 VCE(V) 1 0 0 Qg(nC) 40 80 120 DocID026826 Rev 1 9/20

Electrical characteristics STGFW20H65FB, STGW20H65FB, STGWT20H65FB Figure 24. Thermal impedance for TO-247 and TO-3P K δ=0.5 ZthTO2T_B 0.2 0.1 0.05-1 0.01 0.02 Zth=k Rthj-c δ=tp/t Single pulse -2-5 -4-3 -2-1 tp(s) tp t /20 DocID026826 Rev 1

STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical characteristics K Figure 25. Thermal impedance for TO-3PF δ=0.5 ZthTOF3T_A 0.2 0.1 0.05-1 0.01 0.02 Zth=k Rthj-c δ=tp/t -2 Single pulse -5-4 -3-2 -1 0 tp(s) tp t DocID026826 Rev 1 11/20

Test circuits STGFW20H65FB, STGW20H65FB, STGWT20H65FB 3 Test circuits Figure 26. Test circuit for inductive load switching Figure 27. Gate charge test circuit AM01504v1 AM01505v1 Figure 28. Switching waveform 90% VG % 90% VCE Tr(Voff) % Tcross 90% IC Td(on) Ton Tr(Ion) Td(off) Toff Tf % AM01506v1 12/20 DocID026826 Rev 1

STGFW20H65FB, STGW20H65FB, STGWT20H65FB Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-3PF, STGFW20H65FB Figure 29. TO-3PF drawing 7627132_D DocID026826 Rev 1 13/20

Package mechanical data STGFW20H65FB, STGW20H65FB, STGWT20H65FB Table 7. TO-3PF mechanical data Dim. mm Min. Typ. Max. A 5.30 5.70 C 2.80 3.20 D 3. 3.50 D1 1.80 2.20 E 0.80 1. F 0.65 0.95 F2 1.80 2.20 G.30 11.50 G1 5.45 H 15.30 15.70 L 9.80.20 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15 N 1.80 2.20 R 3.80 4.20 Dia 3.40 3.80 14/20 DocID026826 Rev 1

STGFW20H65FB, STGW20H65FB, STGWT20H65FB Package mechanical data 4.2 TO-247, STGW20H65FB Figure 30. TO-247 drawing 0075325_G DocID026826 Rev 1 15/20

Package mechanical data STGFW20H65FB, STGW20H65FB, STGWT20H65FB Table 8. TO-247 mechanical data Dim. mm. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 L2 18.50 P 3.55 3.65 R 4.50 5.50 S 5.30 5.50 5.70 16/20 DocID026826 Rev 1

STGFW20H65FB, STGW20H65FB, STGWT20H65FB Package mechanical data 4.3 TO-3P, STGWT20H65FB Figure 31. TO-3P drawing 8045950_B DocID026826 Rev 1 17/20

Package mechanical data STGFW20H65FB, STGW20H65FB, STGWT20H65FB Table 9. TO-3P mechanical data Dim. mm Min. Typ. Max. A 4.60 4.80 5 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1.00 1.20 b1 1.80 2.00 2.20 b2 2.80 3.00 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20. D1 13.70 13.90 14. E 15.40 15.60 15.80 E1 13.40 13.60 13.80 E2 9.40 9.60 9.90 e 5.15 5.45 5.75 L 19.80 20 20.20 L1 3.30 3.50 3.70 L2 18.20 18.40 18.60 øp 3.30 3.40 3.50 øp1 3. 3.20 3.30 Q 4.80 5 5.20 Q1 3.60 3.80 4 18/20 DocID026826 Rev 1

STGFW20H65FB, STGW20H65FB, STGWT20H65FB Revision history 5 Revision history Table. Document revision history Date Revision Changes 28-Aug-2014 1 Initial release. DocID026826 Rev 1 19/20

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