2SB740. Silicon PNP Epitaxial. Application. Outline. Absolute Maximum Ratings. REJ03G (Previous ADE ) Rev.2.00 Aug.10.

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Transcription:

Silicon PNP Epitaxial REJ03G0651-0200 (Previous ADE-208-1032) Rev.2.00 Aug.10.2005 Application Low frequency power amplifier Complementary pair with 2SD789 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage V CBO 70 V Collector to emitter voltage V CEO 50 V Emitter to base voltage V EBO 6 V Collector current I C 1 A Collector power dissipation P C 0.9 W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Rev.2.00 Aug 10, 2005 page 1 of 5

Electrical Characteristics Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V (BR)CBO 70 V I C = 10 µa, I E = 0 Collector to emitter breakdown voltage V (BR)CEO 50 V I C = 1 ma, R BE = Emitter to base breakdown voltage V (BR)EBO 6 V I E = 10 µa, I C = 0 Collector cutoff current I CBO 1 µa V CB = 55 V, I E = 0 Emitter cutoff current I EBO 0.2 µa V EB = 6 V, I C = 0 DC current transfer ratio h FE * 1 100 320 V CE = 2 V, I C = 0.1 A Collector to emitter saturation voltage V CE(sat) 0.6 V I C = 1 A, I B = 0.1 A Gain bandwidth product f T 150 MHz V CE = 2 V, I C = 10 ma Collector output capacitance Cob 35 pf V CB = 10 V, I E = 0, f = 1 MHz Note: 1. The 2SB740 is grouped by h FE as follows. B C 100 to 200 160 to 320 (Ta = 25 C) Rev.2.00 Aug 10, 2005 page 2 of 5

Main Characteristics Maximum Collector Dissipation Curve Typical Output Characteristics (1) Collector Power Dissipation P C (W) 1.2 0.8 0.4 100 80 60 40 20 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 ma I B = 0 0 50 100 150 0 2 4 6 8 10 Ambient Temperature Ta ( C) Collector to Emitter Voltage V CE (V) Typical Output Characteristics (2) Typical Transfer Characteristics 2.0 1,000 Collector Current I C (A) 1.6 1.2 0.8 0.4 50 40 30 20 10 ma P C = 0.9 W 300 100 30 10 3 V CE = 2 V 0 I B = 0 0.4 0.8 1.2 1.6 2.0 1 0 0.2 0.4 0.6 0.8 1.0 Collector to Emitter Voltage V CE (V) Base to Emitter Voltage V BE (V) DC Current Transfer Ratio vs. Collector Current Collector Output Capacitance vs. Collector to Base Voltage DC Current Transfer Ratio h FE 10,000 3,000 1,000 300 100 30 Pulse V CE = 2V 10 1 3 10 30 100 300 1,000 Collector Output Capacitance C ob (pf) 3,000 1,000 300 100 30 10 f = 1 MHz IE = 0 3 0.3 1.0 3 10 30 100 300 Collector to Base Voltage V CB (V) Rev.2.00 Aug 10, 2005 page 3 of 5

Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage V CE (sat) (V) Base to Emitter Saturation Voltage V BE (sat) (V) 1.0 0.3 0.1 0.03 V BE (sat) V CE (sat) Pulse I C = 10 I B 0.01 10 30 100 300 1,000 Rev.2.00 Aug 10, 2005 page 4 of 5

Package Dimensions JEITA Package Code SC-51 RENESAS Code PRSS0003DC-A Package Name TO-92 Mod / TO-92 ModV MASS[Typ.] 0.35g Unit: mm 4.8 ± 0.4 3.8 ± 0.4 8.0 ± 0.5 0.65 ± 0.1 0.75 Max 0.60 Max 0.55 Max 0.7 2.3 Max 10.1 Min 0.5 Max 1.27 2.54 Ordering Information Part Name Quantity Shipping Container 2SB740BTZ-E 2SB740CTZ-E 2500 Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5

Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. 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