Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT

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Basestation pplications Broadband, Low-Noise Gain Blocks IF or RF Buffer mplifiers Driver Stage for Power mplifiers Final P for Low-Power pplications High Reliability pplications RF3396General Purpose mplifier RF3396 GENERL PURPOSE MPLIFIER RoHS Compliant & Pb-Free Product Package Style: QFN, 12-Pin, 3 x 3 Features DC to >6000MHz Operation Internally Matched Input and Output 22dB Small Signal Gain +2.0dB Noise Figure +11.5dBm Output P1dB Footprint Compatible with Micro- X pplications Product Description 12 11 10 4 5 6 Functional Block Diagram NC RF IN NC Ordering Information RF3396 General Purpose mplifier RF3396PCB-41X Fully ssembled Evaluation Board 1 2 3 9 8 7 NC RF OUT The RF3396 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium rsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 gain block. pplications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50 input and output impedances and requires only two external DCbiasing elements to operate as specified. The device is designed for cost effective high reliability in a plastic package. The 3mmx3mm footprint is compatible with standard ceramic and plastic Micro-X packages. NC Gas HBT Gas MESFET InGaP HBT Optimum Technology Matching pplied SiGe BiCMOS Si BiCMOS SiGe HBT Gas phemt Si CMOS Si BJT GaN HEMT Rev 8 DS130401 RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLRIS TOTL RDIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.. and licensed for use by RFMD. ll other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 1 of 10

bsolute Maximum Ratings Parameter Rating Unit Input RF Power +3 dbm Operating mbient Temperature -40 to +85 C Storage Temperature -60 to +150 C I CC 40 m Caution! ESD sensitive device. Specification Parameter Unit Condition Min. Max. Overall T=25 C, I CC =35m (See Note 1.) Frequency Range DC to >6000 MHz 3dB Bandwidth 2 GHz Gain 21.0 22.7 db Freq=500MHz 20.2 22.2 24.2 db Freq=850MHz 17.8 19.8 21.8 db Freq=2000MHz 17.4 db Freq=3000MHz 16.0 Freq=4000MHz 12.9 Freq=6000MHz Noise Figure 2.0 db Freq=2000MHz Input VSWR <1.9:1 In a 50 system, DC to 6000MHz Output VSWR <1.9:1 In a 50 system, DC to 3000MHz <1.4:1 In a 50 system, 3000MHz to 6000MHz Output IP 3 +21.5 +23.5 dbm Freq=850MHz +22.0 +24.0 dbm Freq=2000MHz Output P 1dB +9.5 +11.5 dbm Freq=850MHz +9.5 +11.5 dbm Freq=2000MHz Reverse Isolation 22.5 db Freq=2000MHz Thermal I CC =35m, P DISS =110mW. (See Note 3.) Theta JC 335 C/W Maximum Measured Junction Temperature at DC Bias Conditions 122 C T MB = Mean Time To Failures 17,635 years T MB = Exceeding any one or a combination of the bsolute Maximum Rating conditions may cause permanent damage to the device. Extended application of bsolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under bsolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Power Supply With 22 bias resistor Device Operating Voltage 3.3 3.4 3.5 V t pin 8 with I CC =35m 3.9 4.2 4.5 v t evaluation board connector, I CC =35m Operating Current 35 40 m See Note 2. Note 1: ll specification and characterization data has been gathered on standard FR-4 evaluation boards. These evaluation boards are not optimized for frequencies above 2.5GHz. Performance above 2.5GHz may improve if a high performance PCB is used. Note 2: The RF3396 must be operated at or below 40m in order to achieve the thermal performance listed above. While the RF3396 may be operated at higher bias currents, 35m is the recommended bias to ensure the highest possible reliability and electrical performance. Note 3: Because of process variations from part to part, the current resulting from a fixed bias voltage will vary. s a result, caution should be used in designing fixed voltage bias circuits to ensure the worst case bias current does not exceed 40m over all intended operating conditions. 2 of 10 Rev 8 DS130401

Pin Function Description Interface Schematic 1 NC No internal connections. It is not necessary to ground this pin. 2 RF IN RF input pin. This pin is NOT internally DC blocked. DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. 3 NC No internal connections. It is not necessary to ground this pin. 4 Ground connection. 5 Ground connection. 6 Ground connection. 7 NC No internal connections. It is not necessary to ground this pin. 8 RF OUT RF output and bias pin. Biasing is accomplished with an external series resistor and choke inductor to V CC. The resistor is selected to set the DC current into this pin to a desired level. The resistor value is determined by the following equation: R = V SUPPLY V DEVICE ------------------------------------------------------ RF IN Care should also be taken in the resistor selection to ensure that the current into the part never exceeds 40m over the planned operating temperature. This means that a resistor between the supply and this pin is always required, even if a supply near 3.4V is available, to provide DC feedback to prevent thermal runaway. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed. 9 NC No internal connections. It is not necessary to ground this pin. 10 Ground connection. 11 Ground connection. 12 Ground connection. Die Flag I CC Ground connection. To ensure best performance, avoid placing ground vias directly beneath the part. 3 3.00 Package Drawing 0.10 C B 2 PLCS 1 0.10 C 2 PLCS 2.75 SQ 2 PLCS 0.10 C 3.00 0.60 0.24 TYP 2 PLCS 0.10 C B 0.35 0.30 0.20 REF. 12 MX 0.10 M C B PIN 1 ID R0.20 -B- -- -C- 0.05 C 0.90 0.85 0.05 0.00 SETING PLNE RF OUT 1.90 1.60 Dimensions in mm. Shaded lead is pin 1. 0.45 0.35 1.15 0.85 0.375 0.275 0.65 Rev 8 DS130401 3 of 10

pplication Schematic V CC 10 nf 22 pf J1 RF IN RF IN P1 P1-1 1 VCC 2 22 pf 1 2 3 12 11 10 4 5 6 Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) P1-3 3 NC CON3 12 11 10 9 8 7 R1 22 47 nh 22 pf RF OUT R BIS C3 100 pf C4 1 F C1 1 9 L1 C2 50 strip 100 pf 100 nh 100 pf 50 strip 2 8 3 4 5 6 NOTE: Evaluation board optimized for frequencies above 300 MHz and below 2.5 GHz. For operation below 300 MHz the value of inductor L1 and capcitors C1 and C2 should be increased. 7 VCC P1-1 J2 RF OUT 4 of 10 Rev 8 DS130401

Evaluation Board Layout Board Size 1.195" x 1.000" Board Thickness 0.033, Board Material FR-4 Note: small amount of ground inductance is required to achieve datasheet performance. The necessary inductance may be generated by ensuring that no ground vias are placed directly below the footprint of the part. Overlay of Suggested Micro-X and 3mmx3mm Layouts Showing Compatibility Rev 8 DS130401 5 of 10

PCB Design Requirements PCB Surface Finish The PCB surface finish used for RFMD s qualification process is Electroless Nickel, immersion Gold. Typical thickness is 3 inch to 8 inch Gold over 180 inch Nickel. PCB Land Pattern Recommendation PCB land patterns are based on IPC-SM-782 standards when possible. The pad pattern shown has been developed and tested for optimized assembly at RFMD; however, it may require some modifications to address company specific assembly processes. The PCB land pattern has been developed to accommodate lead and package tolerances. PCB Metal Land Mask Pattern 3.20 (mm) Pin 1 0.30 (mm) 0.65 (mm) = 0.59 x 0.32 (mm) 0.80 (mm) 1.00 (mm) 0.40 (mm) 0.65 (mm) 0.95 (mm) Figure 1. PCB Metal Land Pattern (Top View) 1.30 (mm) 2.60 (mm) 0.70 (mm) 1.00 (mm) 2.20 (mm) 6 of 10 Rev 8 DS130401

24.0 Gain versus Frequency cross Temperature I CC=35m 14.0 Output P1dB versus Frequency cross Temperature I CC=35m 22.0 12.0 20.0 10.0 Gain (db) OIP3 (dbm) 18.0 16.0 14.0 12.0 10.0 28.0 26.0 24.0 22.0 20.0 18.0 16.0 14.0 12.0 10.0 5.0 4.5 4.0 100.0 1100.0 2100.0 3100.0 4100.0 5100.0 6100.0 Output IP3 versus Frequency cross Temperature I CC=35m 100.0 600.0 1100.0 1600.0 2100.0 2600.0 3100.0 3600.0 4100.0 Input VSWR versus Frequency cross Temperature I CC=35m Output P1dB (dbm) Noise Figure (db) 8.0 6.0 4.0 2.0 0.0 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 5.0 4.5 4.0 100.0 600.0 1100.0 1600.0 2100.0 2600.0 3100.0 3600.0 4100.0 Noise Figure versus Frequency cross Temperature I CC=35m 100.0 600.0 1100.0 1600.0 2100.0 2600.0 3100.0 Output VSWR versus Frequency cross Temperature I CC=35m 3.5 3.5 VSWR 3.0 VSWR 3.0 2.5 2.5 2.0 2.0 1.5 1.5 1.0 1.0 100.0 1100.0 2100.0 3100.0 4100.0 5100.0 6100.0 100.0 1100.0 2100.0 3100.0 4100.0 5100.0 6100.0 Rev 8 DS130401 7 of 10

27.0 Reverse Isolation versus Frequency cross Temperature I CC=35m 60.0 Current versus Voltage (t Evaluation Board Connector, R BIS=22 ) 25.0 50.0 Reverse Isolation (db) ICC (m) Junction Temperature ( C) 23.0 21.0 19.0 17.0 15.0 55.00 50.00 45.00 40.00 35.00 30.00 25.00 20.00 15.00 10.00 135.00 130.00 125.00 120.00 115.00 100.0 1100.0 2100.0 3100.0 4100.0 5100.0 6100.0 Current versus Voltage (t Pin 8 of the RF3396) Vcc=4.2V 3.20 3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 V PIN (V) Junction Temperature versus Power Dissipated (T MB=) ICC (m) Power Dissipated (W) 40.0 30.0 20.0 10.0 0.0 0.140 0.130 0.120 0.110 0.100 0.090 0.080 0.070 0.060 3.5 3.7 3.9 4.1 4.3 4.5 4.7 V CC (V) Power Dissipated versus Voltage at Pin 8 (T MB=) 3.195 3.200 3.205 3.210 3.215 3.220 3.225 3.230 3.235 V PIN (V) 110.00 105.00 0.07 0.08 0.09 0.10 0.11 0.12 0.13 Power Dissipated (Watts) 8 of 10 Rev 8 DS130401

PCB Solder Mask Pattern Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown for the PCB metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all pads. The center-grounding pad shall also have a solder mask clearance. Expansion of the pads to create solder mask clearance can be provided in the master data or requested from the PCB fabrication supplier. = 0.72 x 0.45 (mm) 3.32 (mm) 0.65 (mm) 1.01 (mm) Figure 2. PCB Solder Mask (Top View) 0.72 (mm) 1.15 (mm) 0.41 (mm) Pin 1 0.45 (mm) 0.65 (mm) 1.30 (mm) 2.60 (mm) Thermal Pad and Via Design The PCB metal land pattern has been designed with a thermal pad that matches the exposed die paddle size on the bottom of the device. Thermal vias are required in the PCB layout to effectively conduct heat away from the package. The via pattern has been designed to address thermal, power dissipation and electrical requirements of the device as well as accommodating routing strategies. The via pattern used for the RFMD qualification is based on thru-hole vias with 0.203mm to 0.330mm finished hole size on a 0.5mm to 1.2mm grid pattern with 0.025mm plating on via walls. If micro vias are used in a design, it is suggested that the quantity of vias be increased by a 4:1 ratio to achieve similar results. NOTE: small amount of ground inductance is required to achieve data sheet performance. The necessary inductance may be generated by ensuring that no ground vias are placed directly below the footprint of the part. 0.75 (mm) 1.05 (mm) 2.27 (mm) Rev 8 DS130401 9 of 10

10 of 10 Rev 8 DS130401