NTJS3151P. Trench Power MOSFET. 12 V, 3.3 A, Single P Channel, ESD Protected SC 88

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NTJS5P Trench Power MOSFET V,. A, Single P Channel, ES Protected SC 88 Features Leading Trench Technology for Low R S(ON) Extending Battery Life SC 88 Small Outline (x mm, SC7 Equivalent) Gate iodes for ES Protection Pb Free Packages are Available Applications High Side Load Switch Cell Phones, Computing, igital Cameras, MPs and PAs V (BR)SS R S(on) Typ I Max 5 m @.5 V V 7 m @.5 V. A m @.8 V SC 88 (SOT ) MAXIMUM RATINGS ( unless otherwise stated) Parameter Symbol Value Units rain to Source Voltage V SS V Gate to Source Voltage V GS ± V 5 Continuous rain Current (Note ) Steady State T A = 5 C I.7 A T A = 85 C. G S Power issipation (Note ) t 5 s T A = 5 C. Steady State T A = 5 C P.5 W Top View Pulsed rain Current t p = s I M 8. A Operating Junction and Storage Temperature T J, T STG 55 to 5 C G k Source Current (Body iode) I S.8 A Lead Temperature for Soldering Purposes (/8 from case for s) T L C S THERMAL RESISTANCE RATINGS (Note ) Parameter Symbol Max Units Junction to Ambient Steady State R JA C/W Junction to Ambient t 5 s R JA Junction to Lead Steady State R JL Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Surface mounted on FR board using in sq pad size (Cu area =.7 in sq [ oz] including traces). SC 88/SOT CASE 9B STYLE 8 TJ M MARKING IAGRAM & PIN ASSIGNMENT S TJ M G = evice Code = ate Code = Pb Free Package (Note: Microdot may be in either location) ORERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, March, Rev. Publication Order Number: NTJS5/

NTJS5P ELECTRICAL CHARACTERISTICS (T J =5 C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS rain to Source Breakdown Voltage V (BR)SS V GS = V, I = 5 A V rain to Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage rain Current I SS VGS = 9. V, V S = V V (BR)SS /T J mv/ C. A.5 Gate to Source Leakage Current I GSS V S = V, V GS = ±.5 V ±.5 A V S = V, V GS = ± V ± ma ON CHARACTERISTICS (Note ) Gate Threshold Voltage V GS(TH) V GS = V S, I = A. V Negative Threshold Temperature Coefficient V GS(TH) /T J. mv/ C rain to Source On Resistance R S(on) V GS =.5 V, I =. A 5 m V GS =.5 V, I =.9 A 7 9 V GS =.8 V, I =. A Forward Transconductance g FS V GS = V, I =. A 5 S Input Capacitance C ISS CHARGES AN CAPACITANCES 85 pf Output Capacitance C OSS V GS = V, f =. MHz, V S = V 7 Reverse Transfer Capacitance C RSS Total Gate Charge Q G(TOT) 8. nc Gate to Source Charge Q GS V GS =.5 V, V S = 5. V, I =. A. Gate to rain Charge Q G. Gate Resistance R G SWITCHING CHARACTERISTICS (Note ) Turn On elay Time t d(on) Rise Time t r V GS =.5 V, V =. V,.5 Turn Off elay Time t d(off) I =. A, R G =..5 Fall Time t f.9 RAIN SOURCE IOE CHARACTERISTICS (Note ) Forward iode Voltage V S VGS = V, I S =. A. Pulse Test: pulse width s, duty cycle %.. Switching characteristics are independent of operating junction temperatures..8 s.85. V.7

NTJS5P TYPICAL PERFORMANCE CURVES ( unless otherwise noted) 8 V GS =.5 V 8 V S V I, RAIN CURRENT (AMPS) V GS =. V V. V. V. V. V 5 V S, RAIN TO SOURCE VOLTAGE (VOLTS) I, RAIN CURRENT (AMPS) 5 C 5 C T J = 55 C.5.5.5.5 V GS, GATE TO SOURCE VOLTAGE (VOLTS).5 Figure. On Region Characteristics Figure. Transfer Characteristics R S(on), RAIN TO SOURCE RESISTANCE ( ). V GS =.5 V.75.5.5 T J = 55 C V GS =.5 V.5.5.5.5.5 5.5.5 7.5.5.5.5.5.5 5.5.5 7.5 I, RAIN CURRENT (AMPS) R S(on), RAIN TO SOURCE RESISTANCE ( ).5 V GS =.8 V.... V GS =.5 V I, RAIN CURRENT (AMPS) Figure. On Resistance vs. rain Current and Temperature Figure. On Resistance vs. rain Current and Gate Voltage R S(on), RAIN TO SOURCE RESISTANCE (NORMALIZE)..8.....8.. I =. A V GS =.5 V. 5 5 5 5 75 5 5 T J, JUNCTION TEMPERATURE ( C) I SS, LEAKAGE CURRENT (na) V GS = V T J = 5 C 8 V S, RAIN TO SOURCE VOLTAGE (VOLTS) Figure 5. On Resistance Variation with Temperature Figure. rain to Source Leakage Current vs. Voltage

NTJS5P TYPICAL PERFORMANCE CURVES ( unless otherwise noted) C, CAPACITANCE (pf) V GS = V C iss.5 8 Q Q.5 C oss.5 I =. A C rss 8 8 GATE TO SOURCE OR RAIN TO SOURCE VOLTAGE (VOLTS) Q g, TOTAL GATE CHARGE (nc) V GS, GATE TO SOURCE VOLTAGE (VOLTS).5.5 QT Figure 7. Capacitance Variation Figure 8. Gate to Source Voltage vs. Total Gate Charge t, TIME (ns) t f t d(off) t r t d(on) R G, GATE RESISTANCE (OHMS) V =. V I =. A V GS =.5 V I S, SOURCE CURRENT (AMPS) V GS = V.....5..7.8.9 V S, SOURCE TO RAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure. iode Forward Voltage vs. Current

NTJS5P ORERING INFORMATION evice Package Shipping NTJS5PT SC 88 Tape & Reel NTJS5PTG SC 88 (Pb Free) Tape & Reel NTJS5PT SC 88 Tape & Reel NTJS5PTG SC 88 (Pb Free) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BR8/. 5

NTJS5P PACKAGE IMENSIONS SC 88/SC7 /SOT CASE 9B ISSUE W e NOTES:. IMENSIONING AN TOLERANCING PER ANSI Y.5M, 98.. CONTROLLING IMENSION: INCH.. 9B OBSOLETE, NEW STANAR 9B. H E 5 E A b PL. (.8) M E M A L C MILLIMETERS IM MIN NOM MAX A.8.95. A..5. A b... C...5.8.. E.5.5.5 e.5 BSC L... H E... STYLE 8: PIN. RAIN. RAIN. GATE. SOURCE 5. RAIN. RAIN INCHES MIN NOM MAX..7..... REF.8 REF..8...5..7.78.8.5.9.5. BSC..8..78.8.8 A SOLERING FOOTPRINT*.5.97.5.5..57.5.5.9.78 SCALE : mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLERRM/. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORERING INFORMATION LITERATURE FULFILLMENT: Literature istribution Center for ON Semiconductor P.O. Box, Phoenix, Arizona 858 USA Phone: 8 89 77 or 8 8 Toll Free USA/Canada Fax: 8 89 779 or 8 87 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8 8 9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 9 Kamimeguro, Meguro ku, Tokyo, Japan 5 5 Phone: 8 577 85 ON Semiconductor Website: Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTJS5P/

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