BU941Z/BU941ZP BU941ZPFI

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Transcription:

BU941Z/BU941ZP BU941ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON TRANSISTOR VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING APPLICATIONS HIGH RUGGEDNESS ELECTRONIC IGNITIONS 1 2 TO-3 DESCRIPTION The devices are bipolar Darlington transistors manufactured using Multiepitaxial Planar technology. They have been properly designed to be used in Automotive environment as electronic ignition power actuators. 3 2 2 TO-218 1 ISOWATT218 1 INTERNAL SCHEMATIC DIAGRAM 3 for TO-3 Emitter: pin 2 Base: pin1 Collector: tab ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BU941Z BU941ZP BU941ZPFI VCEO Collector-Emitter Voltage (IB = 0) 350 V V EBO Emitter-Base Voltage (I C =0) 5 V IC Collector Current 15 A I CM Collector Peak Current 30 A I B Base Current 1 A I BM Base Peak Current 5 A Ptot Total Dissipation at Tc =25 o C 180 155 65 W Visol Insulation Withstand Voltage (RMS) from All Three Leads to Exernal Heatsink 2500 V T stg Storage Temperature -65 to 200-65 to 175-65 to 175 T j Max. Operating Junction Temperature 200 175 175 o C o C April 2002 1/8

THERMAL DATA TO-3 TO-218 ISOWATT218 Rthj-case Thermal Resistance Junction-case Max 0.97 0.97 2.3 o C/W ELECTRICAL CHARACTERISTICS (T case =25 o C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICEO IEBO Collector Cut-off Current (IB =0) Emitter Cut-off Current (I C =0) VCE =300V VCE =300V TC =125 o C 100 0.5 µa ma VEB =5V 20 ma V CL Clamping Voltage I C = 100 ma 350 500 V V CE(sat) Collector-Emitter I C =8A I B =100mA 1.8 V Saturation Voltage IC =10A IB=250mA 1.8 V I C =12A I B =300mA 2 V Base-Emitter IC =8A IB=100mA 2.2 V Saturation Voltage IC =10A IB=250mA 2.5 V I C =12A I B =300mA 2.7 V h FE DC Current Gain I C =5A V CE = 10 V 300 V F Diode Forward Voltage I F =10A 2.5 V Functional Test VCC =24V L=7mH 10 A (see fig. 1) VBE(sat) INDUCTIVE LOAD VCC =12V L=7mH t s Storage Time V BE =0 R BE =47Ω tf Fall Time Vclamp =300V IC =7A I B =70mA (seefig.3) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 15 0.5 µs µs Safe Operating Areas Derating Curves (TO-3) 2/8

Derating Curves (TO-218/ISOWATT218) DC Current Gain DC Current Gain Collector-emitter Saturation Voltage Collector-emitter Saturation Voltage Base-emitter Saturation Voltage 3/8

Base-emitter Saturation Voltage Collector-emitter Saturation Voltage FIGURE 1: Functional Test Circuit FIGURE 2: Functional Test Waveforms FIGURE 3: Switching Time Test Circuit 4/8

TO-3 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 11.00 13.10 0.433 0.516 B 0.97 1.15 0.038 0.045 C 1.50 1.65 0.059 0.065 D 8.32 8.92 0.327 0.351 E 19.00 20.00 0.748 0.787 G 10.70 11.10 0.421 0.437 N 16.50 17.20 0.649 0.677 P 25.00 26.00 0.984 1.023 R 4.00 4.09 0.157 0.161 U 38.50 39.30 1.515 1.547 V 30.00 30.30 1.187 1.193 P A D G C N O U V B E R P003F 5/8

TO-218 (SOT-93) MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 4.7 4.9 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.5 0.098 E 0.5 0.78 0.019 0.030 F 1.1 1.3 0.043 0.051 G 10.8 11.1 0.425 0.437 H 14.7 15.2 0.578 0.598 L2 16.2 0.637 L3 18 0.708 L5 3.95 4.15 0.155 0.163 L6 31 1.220 R 12.2 0.480 Ø 4 4.1 0.157 0.161 F H G C D A E L5 L6 L3 L2 R 1 2 3 P025A 6/8

ISOWATT218 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 5.35 5.65 0.211 0.222 C 3.30 3.80 0.130 0.150 D 2.90 3.10 0.114 0.122 D1 1.88 2.08 0.074 0.082 E 0.75 0.95 0.030 0.037 F 1.05 1.25 0.041 0.049 F2 1.50 1.70 0.059 0.067 F3 1.90 2.10 0.075 0.083 G 10.80 11.20 0.425 0.441 H 15.80 16.20 0.622 0.638 L 9 0.354 L1 20.80 21.20 0.819 0.835 L2 19.10 19.90 0.752 0.783 L3 22.80 23.60 0.898 0.929 L4 40.50 42.50 1.594 1.673 L5 4.85 5.25 0.191 0.207 L6 20.25 20.75 0.797 0.817 N 2.1 2.3 0.083 0.091 R 4.6 0.181 DIA 3.5 3.7 0.138 0.146 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm P025C/A 7/8

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2002 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8