BU941ZP BU941ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON TRANSISTORS. Figure 1: Package

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Transcription:

BU941ZP BU941ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON TRANSISTORS n n n n VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING Figure 1: Package APPLICATION n HIGH RUGGEDNESS ELECTRONIC IGNITIONS DESCRIPTION The devices are bipolar Darlington transistors manufactured using Multi-Epitaxial Planar technology. They have been properly designed to be used in Automotive environment as electronic ignition power actuators. 3 2 2 1 1 TO-218 ISOWATT218 Figure 2: Internal Schematic Diagram 3 Table 1: Order Code Part Number Marking Package Packaging BU941ZP BU941ZP TO-218 TUBE BU941ZFI BU941ZPFI ISOWATT218 TUBE February 2005 Rev. 6 1/9

Table 2: Absolute Maximum Ratings Symbol Parameter Value Unit BU941ZP BU941ZPFI Unit V CEO Collector-Emitter Voltage (I B = 0) 350 V V EBO Emitter-Base Voltage (I C = 0) 5 V I C Collector Current 15 A I CM Collector Peak Current (t p < 5ms) 30 A I B Base Current 1 A I BM Base Peak Current (t p < 5 ms) 5 A P tot Total Dissipation at T C = 25 o C 155 65 W V isol Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink 2500 V T stg Storage Temperature -65 to 175-65 to 175 C T J Max. Operating Junction Temperature 175 175 C Table 3: Thermal Data TO-218 ISOWATT218 Unit R thj-case Thermal Resistance Junction-Case Max 0.97 2.3 o C/W Table 4: Electrical Characteristics (T case = 25 o C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CEO Collector Cut-off Current V CE = 300 V 100 µa (I B = 0) V CE = 300 V T j = 125 o C 0.5 ma I EBO Emitter Cut-off Current V EB = 5 V 20 ma (I C = 0 ) V CL * Clamping Voltage I C = 100 ma 350 500 V V CE(sat) * Collector-Emitter I C = 8 A I B =100 ma 1.8 V Saturation Voltage I C = 10 A I B = 250 ma 1.8 V I C = 12 A I B = 300 ma 2 V V BE(sat) * Base-Emitter I C = 8 A I B =100 ma 2.2 V Saturation Voltage I C = 10 A I B = 250 ma 2.5 V I C = 12 A I B = 300 ma 2.7 V h FE * DC Current Gain I C = 5 A V CE = 10 V 300 Functional Test V CC = 24 V L = 7 mh 10 A (see fig. 12) INDUCTIVE LOAD V CC = 12 V L = 7 mh t s Storage Time V BE(off) = 0 V R BE =47 W 15 µs t f Fall Time V Clamp = 300 V I C = 7 A 0.5 µs * Pulsed: Pulsed duration = 300 µs, duty cycle 1.5 %. I B = 70 ma (see fig. 14) V F Diode Forward Voltage I F = 10 V 2.5 V 2/9

Figure 3: Safe Operating Area Figure 6: Derating Curves Figure 4: DC Current Gain Figure 7: DC Current Gain Figure 5: Collector-Emitter Saturation Voltage Figure 8: Collector-Emitter Saturation Voltage 3/9

Figure 9: Base-Emitter Saturation Voltage Figure 11: Base-Emitter Saturation Voltage Figure 10: Collector-Emitter Saturation Voltage 4/9

Figure 12: Functional Test Circuit Figure 13: Functional Test Waveforms Figure 14: Switching Time Test Circuit 5/9

TO-218 (SOT-93) MECHANICAL DATA DIM. mm. MIN. TYP MAX. A 4.70 4.90 C 1.17 1.37 D 2.50 D1 1.27 E 0.50 0.78 F 1.10 1.30 F3 1.75 F4 2.10 G 10.80 11.10 H 14.70 15.20 H1 10.00 L 12.20 L2 16.20 L3 18.00 L4 2.40 L5 3.95 4.15 L6 31.00 Dia 4.00 4.10 0016087 D 6/9

ISOWATT218 (option B ) MECHANICAL DATA DIM. mm. MIN. TYP MAX. A 5.35 5.65 B 2.5 C 3.30 3.80 D 2.90 3.10 D1 1.88 2.08 E 0.75 0.95 F 0.75 0.95 F2 1.50 1.85 F3 1.90 2.20 F5 1.10 G 10.80 11.20 H 15.80 16.20 L 9 L1 20.80 21.20 L2 19.10 19.90 L3 22.80 23.60 L4 40.50 42.50 L5 4.85 5.25 L6 20.25 20.75 N 2.0 2.40 R 4.6 Dia 3.50 3.70 0016093B n 7/9

Table 5: Revision History Date Release Change Designator 22-Apr-2002 4 Fourth Release 09-Sep-2004 5 Fifth Release 03-Feb-2005 6 Mechanical Data has been updated 8/9

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9