MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE 5VCoolMOS CEPowerTransistor DataSheet Rev.2.2 Final PowerManagement&Multimarket
1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.coolmos CEisa priceperformanceoptimizedplatformenablingtotargetcostsensitive applicationsinconsumerandlightingmarketsbystillmeetinghighest efficiencystandards.thenewseriesprovidesallbenefitsofafast switchingsuperjunctionmosfetwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. 1 2 DPAK tab Features ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Veryhighcommutationruggedness Easytouse/drive Pbfreeplating,Halogenfreemoldcompound Qualifiedforstandardgradeapplications Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.pcsilverbox,adapter,lcd&pdptvandindoorlighting. 3 Gate Pin 1 Drain Pin 2 Source Pin 3 Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 55 V RDS(on),max.5 Ω Qg.typ 18.7 nc ID,pulse 24 A Eoss@4V 2.2 µj Body diode di/dt 5 A/µs Type/OrderingCode Package Marking RelatedLinks PGTO 252 5S5CE see Appendix A 2 Rev.2.2,2151117
TableofContents Description............................................................................. 2 Maximum ratings........................................................................ 4 Thermal characteristics.................................................................... 4 Electrical characteristics................................................................... 5 Electrical characteristics diagrams........................................................... 7 Test Circuits........................................................................... 11 Package Outlines....................................................................... 12 Appendix A............................................................................ 13 Revision History........................................................................ 14 Disclaimer............................................................................ 14 3 Rev.2.2,2151117
2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID 7.6 4.8 A TC = 25 C TC = 1 C Pulsed drain current 2) ID,pulse 24 A TC=25 C Avalanche energy, single pulse EAS 129 mj ID =2.9A; VDD = 5V Avalanche energy, repetitive EAR.2 mj ID =2.9A; VDD = 5V Avalanche current, repetitive IAR 2.9 A MOSFET dv/dt ruggedness dv/dt 5 V/ns VDS=...4V Gate source voltage Power dissipation (non FullPAK) TO252 VGS 2 3 2 3 V static; AC (f>1 Hz) Ptot 57 W TC=25 C Operating and storage temperature Tj,Tstg 55 15 C Continuous diode forward current IS 6.6 A TC=25 C Diode pulse current 2) IS,pulse 24. A TC = 25 C Reverse diode dv/dt 3) dv/dt 15 V/ns VDS=...4V,ISD<=IS,Tj=25 C, tcond<2µs Maximum diode commutation speed 3) dif/dt 5 A/µs VDS=...4V,ISD<=IS,Tj=25 C, tcond<2µs 3Thermalcharacteristics Table3ThermalcharacteristicsDPAK Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 2.19 C/W Thermal resistance, junction ambient 4) RthJA Soldering temperature, wave & reflowsoldering allowed 35 62 C/W Tsold 26 C reflow MSL 1 SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6cm 2 cooling area 4) 1) Limited by Tj max. Maximum duty cycle D=.75 2) Pulse width tp limited by Tj,max 3) VDClink=4V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG 4) Device on 4mm*4mm*1.5mm one layer epoxy PCB FR4 with 6cm 2 copper area (thickness 7µm) for drain connection. PCB is vertical without air stream cooling. 4 Rev.2.2,2151117
4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 5 V VGS=V,ID=1mA Gate threshold voltage V(GS)th 2.5 3 3.5 V VDS=VGS,ID=.2mA Zero gate voltage drain current IDSS 1 1 µa VDS=5V,VGS=V,Tj=25 C VDS=5V,VGS=V,Tj=15 C Gatesource leakage curent IGSS 1 na VGS=2V,VDS=V Drainsource onstate resistance RDS(on).45 1.18.5 Ω VGS=13V,ID=2.3A,Tj=25 C VGS=13V,ID=2.3A,Tj=15 C Gate resistance RG 3 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 433 pf VGS=V,VDS=1V,f=1MHz Output capacitance Coss 31 pf VGS=V,VDS=1V,f=1MHz Effective output capacitance, energy related 1) Co(er) 25 pf VGS=V,VDS=...4V Effective output capacitance, time related 2) Co(tr) 1 pf ID=constant,VGS=V,VDS=...4V Turnon delay time td(on) 6 ns Rise time tr 5 ns Turnoff delay time td(off) 3 ns Fall time tf 12 ns VDD=4V,VGS=13V,ID=2.9A, RG=3.4Ω VDD=4V,VGS=13V,ID=2.9A, RG=3.4Ω VDD=4V,VGS=13V,ID=2.9A, RG=3.4Ω VDD=4V,VGS=13V,ID=2.9A, RG=3.4Ω Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 2.3 nc VDD=4V,ID=2.9A,VGS=to1V Gate to drain charge Qgd 1 nc VDD=4V,ID=2.9A,VGS=to1V Gate charge total Qg 18.7 nc VDD=4V,ID=2.9A,VGS=to1V Gate plateau voltage Vplateau 5.3 V VDD=4V,ID=2.9A,VGS=to1V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromto8%V(BR)DSS 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfromto8%V(BR)DSS 5 Rev.2.2,2151117
Table7Reversediodecharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Diode forward voltage VSD.85 V VGS=V,IF=2.9A,Tf=25 C Reverse recovery time trr 18 ns VR=4V,IF=2.9A,diF/dt=1A/µs Reverse recovery charge Qrr 1.2 µc VR=4V,IF=2.9A,diF/dt=1A/µs Peak reverse recovery current Irrm 12 A VR=4V,IF=2.9A,diF/dt=1A/µs 6 Rev.2.2,2151117
5Electricalcharacteristicsdiagrams Powerdissipation(NonFullPAK) 7 Max.transientthermalimpedance(NonFullPAK) 1 1 6 5 1.5 Ptot[W] 4 3 ZthJC[K/W].2.1.5.2 2 1 1.1 single pulse 1 4 8 12 16 TC[ C] Ptot=f(TC) 1 2 1 5 1 4 1 3 1 2 1 1 tp[s] ZthJC=f(tP);parameter:D=tp/T Safeoperatingarea(NonFullPAK)Tj=25 C 1 2 Safeoperatingarea(NonFullPAK)Tj=8 C 1 2 1 1 1 µs 1 1 1 µs 1 µs 1 µs ID[A] 1 1 ms 1 µs 1 ms ID[A] 1 1 ms 1 µs 1 1 DC 1 1 DC 1 ms 1 2 1 1 1 1 2 1 3 VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp 1 2 1 1 1 1 2 1 3 VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp 7 Rev.2.2,2151117
Typ.outputcharacteristicsTj=25 C 3 Typ.outputcharacteristicsTj=125 C 18 25 2 2 V 1 V 8 V 16 14 12 2 V 1 V 8 V ID[A] 15 7 V ID[A] 1 8 7 V 6 V 1 6 V 5 5.5 V 5 V 4.5 V 5 1 15 2 VDS[V] 6 4 2 5.5 V 5 V 4.5 V 5 1 15 2 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS ID=f(VDS);Tj=125 C;parameter:VGS Typ.drainsourceonstateresistance 1.8 Drainsourceonstateresistance 1.4 1.6 1.2 5 V 5.5 V 6 V 6.5 V 7 V 1. RDS(on)[Ω] 1.4 1.2 1 V RDS(on)[Ω].8.6 98% typ.4 1..2.8 5 1 15 ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS. 5 25 25 5 75 1 125 15 175 Tj[ C] RDS(on)=f(Tj);ID=2.3A;VGS=13V 8 Rev.2.2,2151117
Typ.transfercharacteristics 3 Typ.gatecharge 1 9 25 25 C 8 12 V 2 7 6 4 V ID[A] 15 15 C VGS[V] 5 4 1 3 5 2 1 2 4 6 8 1 VGS[V] ID=f(VGS);VDS=2V;parameter:Tj 5 1 15 2 25 Qgate[nC] VGS=f(Qgate);ID=2.9Apulsed;parameter:VDD Avalancheenergy 14 Drainsourcebreakdownvoltage 58 12 56 1 54 EAS[mJ] 8 6 VBR(DSS)[V] 52 5 4 48 2 46 25 5 75 1 125 15 175 Tj[ C] EAS=f(Tj);ID=2.9A;VDD=5V 44 6 2 2 6 1 14 18 Tj[ C] VBR(DSS)=f(Tj);ID=1mA 9 Rev.2.2,2151117
Typ.capacitances 1 4 Typ.Cossstoredenergy 3. 2.5 1 3 Ciss 2. C[pF] 1 2 Coss Eoss[µJ] 1.5 1. 1 1 Crss.5 1 1 2 3 4 5 VDS[V] C=f(VDS);VGS=V;f=1MHz. 1 2 3 4 5 VDS[V] Eoss=f(VDS) Forwardcharacteristicsofreversediode 1 2 1 1 IF[A] 125 C 25 C 1 1 1.4.6.8 1. 1.2 1.4 VSD[V] IF=f(VSD);parameter:Tj 1 Rev.2.2,2151117
6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V,I (peak) R g 2 I F di F / dt t F t rr t S I F t I F R g 1 = R g 2 I rrm Q F Q S di rr / dt 1 %I rrm t rr =t F +t S Q rr = Q F +Q S Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform 9% V GS V GS 1% t d(on) t r t d(off) t f t on t off Table1Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D I D 11 Rev.2.2,2151117
12 5VCoolMOS CEPowerTransistor Rev.2.2,2151117 7PackageOutlines 2. ISSUE DATE EUROPEAN PROJECTION 4mm 2. SCALE REVISION 19215 5 DOCUMENT NO. Z8B3328 *) mold flash not included MILLIMETERS 4.57 (BSC) 2.29 (BSC) L4 D N H E1 e1 e E D1 L3 1.18.51.9 5.2 9.4 6.4 4.7 5.97 3 b3 A DIM b2 c b c2 A1 5. MIN 2.16.64.46.65.46..46.2.35.198.252.185.235.37 1.7 1. 5.6 5.84 6.22 6.73 1.25 1.48.18 (BSC).9 (BSC) 3.67.22.39.23.265.49.245.413.197.85.25.18.26.18. 5.5 MAX 2.41.15 1.15.6.89.98 INCHES MIN.217 MAX.6.95.35.24.45.39 L F6 F1 F2 F3 F4 F5 1.2 6.4 1.6 2.2 5.8 5.76.417.252.87.228.227.47 Figure1OutlinePGTO252,dimensionsinmm/inches
8AppendixA Table11RelatedLinks IFXCoolMOSWebpage:www.infineon.com IFXDesigntools:www.infineon.com 13 Rev.2.2,2151117
RevisionHistory Revision:2151117,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2. 212629 Release of final version 2.1 213716 update to Halogen free mold compound 2.2 2151117 Updated to qualified for standard grade & updated package drawing WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany 215InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 14 Rev.2.2,2151117