TC75S55F, TC75S55FU, TC75S55FE

Similar documents
TC75S56F, TC75S56FU, TC75S56FE

TA75W01FU TA75W01FU. Dual Operational Amplifier. Features Pin Connection (Top View)

TC75W57FU, TC75W57FK

TC4069UBP, TC4069UBF, TC4069UBFT

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7S14F, TC7S14FU

TC7W00FU, TC7W00FK TC7W00FU/FK. Dual 2-Input NAND Gate. Features. Marking. Pin Assignment (top view)

TC4001BP, TC4001BF, TC4001BFT

TC7W04FU, TC7W04FK TC7W04FU/FK. 3 Inverters. Features. Marking TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1829

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK mw

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240

TC7SB3157CFU TC7SB3157CFU. 1. Functional Description. 2. General. 3. Features. 4. Packaging and Pin Assignment. 5. Marking Rev.4.

TC7S04FU. Inverter. Features. Absolute Maximum Ratings (Ta = 25 C) TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213

TC7MBL3245AFT, TC7MBL3245AFK

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009

TCK106AF, TCK107AF, TCK108AF

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200

TC4011BP,TC4011BF,TC4011BFN,TC4011BFT

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK211. Characteristics Symbol Test Condition Min Typ. Max Unit

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK302

Ultra low quiescent current, Fast Load Transient 300 ma CMOS Low Drop-Out Regulator in ultra small package

HN1B01F HN1B01F. Audio-Frequency General-Purpose Amplifier Applications Q1: Q2: Marking. Q1 Absolute Maximum Ratings (Ta = 25 C)

RN4987 RN4987. Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Equivalent Circuit and Bias Resister Values

TC74VCX08FT, TC74VCX08FK

TC74AC04P, TC74AC04F, TC74AC04FT

TC74VHC08F, TC74VHC08FT, TC74VHC08FK

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TAR5S15U ~ TAR5S50U

TC7SBL66CFU, TC7SBL384CFU

TC7WH00FU, TC7WH00FK

TC4584BP, TC4584BF TC4584BP/BF. TC4584B Hex Schmitt Trigger. Pin Assignment. Logic Diagram. Input/Output Voltage Characteristic

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110MFV,RN1111MFV

HN1B04FU HN1B04FU. Audio Frequency General Purpose Amplifier Applications. Marking. Q1 Absolute Maximum Ratings (Ta = 25 C)

RN2101MFV, RN2102MFV, RN2103MFV RN2104MFV, RN2105MFV, RN2106MFV

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086. Characteristics Symbol Test Condition Min Typ. Max Unit

TC4093BP, TC4093BF TC4093BP/BF. TC4093B Quad 2-Input NAND Schmitt Triggers. Pin Assignment. Logic Diagram

TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR5SB15 ~ TCR5SB ma CMOS Low-Dropout Regulators (Point Regulators)

TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK292

3A, 8 mω Ultra Low On resistance Load Switch IC with Reverse Current Blocking and Thermal Shutdown function

TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR5SB15~TCR5SB ma CMOS Low-Dropout Regulators (Point Regulators)

TC74LCX08F, TC74LCX08FT, TC74LCX08FK

TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK294

TC7SB66CFU, TC7SB67CFU

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TAR5SB15 ~ TAR5SB50

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322

TC74HC00AP,TC74HC00AF,TC74HC00AFN

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2714

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3078A

TC7USB40FT TC7USB40FT. 1. Functional Description. 2. General. 3. Features. 4. Packaging and Pin Assignment Rev.2.0. Dual SPDT USB Switch

74LCX04FT 74LCX04FT. 1. Functional Description. 2. General. 3. Features. 4. Packaging Rev Toshiba Corporation

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU

TCK104G, TCK105G. Load Switch IC with Current Limit function TCK104G,TCK105G. Feature

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FU

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM12U7X

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2065

(Note 1), (Note 2) (Note 1) (Note 1) (Silicon limit) (T c = 25 ) (t = 1 ms) (t = 10 s) (t = 10 s) (Note 3) (Note 4) (Note 5)

SSM3K35CTC SSM3K35CTC. 1. Applications. 2. Features. 3. Packaging and Pin Assignment Rev.3.0. Silicon N-Channel MOS

TLP3924 TELECOMMUNICATION PROGRAMMABLE CONTROLLERS MOSFET GATE DRIVER. Features. Pin Configuration (top view)

SSM3J118TU SSM3J118TU. High-Speed Switching Applications. Absolute Maximum Ratings (Ta = 25 C) Electrical Characteristics (Ta = 25 C)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2705

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548A

TC74HC14AP,TC74HC14AF

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2 -π-mos V) 2SK2963

TLP3543 TLP Applications. 2. General. 3. Features. 4. Packaging and Pin Assignment Rev.3.0. Start of commercial production

TOSHIBA Original CMOS 16-Bit Microcontroller. TLCS-900/H Series TMP95C061BFG TMP95C061BDFG. Semiconductor Company

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3328. JEITA Storage temperature range T stg 55 to 150 C

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T. A Pulse. 3.4 (Note 2) 1250 mw

TLP206A TLP206A. Measurement Instrument Data Acquisition Programmable Control. Pin Configuration (top view) Internal Circuit

SSM6J507NU SSM6J507NU. 1. Applications. 2. Features. 3. Packaging and Pin Assignment Rev Toshiba Corporation

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225. JEITA Storage temperature range T stg 55 to 150 C

RN2101, RN2102, RN2103, RN2104, RN2105, RN2106

(Note 1,2) (Note 1,3) (Note 1) (Silicon limit) (t = 1 ms) (T c = 25 ) (Note 4)

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1428. JEITA Junction temperature T j 150 C

TC7MBL3257CFT,TC7MBL3257CFK,TC7MBL3257CFTG

TA78L005AP,TA78L006AP,TA78L007AP,TA78L075AP,TA78L008AP, TA78L009AP,TA78L010AP,TA78L012AP,TA78L132AP, TA78L015AP,TA78L018AP,TA78L020AP,TA78L024AP

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1736. mw 1000 (Note 1)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3303. TOSHIBA 2-7J1A temperature/current/voltage and the significant change in

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1244

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213. mw 1000 (Note 1)

SSM3K339R SSM3K339R. 1. Applications. 2. Features. 3. Packaging and Pin Assignment Rev.1.0. Silicon N-Channel MOS

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K37FS. JEDEC Storage temperature range T stg 55 to 150 C

TOSHIBA Schottky Barrier Diode CMS14

TLP206A TLP206A. Measurement Instrument Data Acquisition Programmable Control. Pin Configuration (top view) Internal Circuit

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3405

SSM3J356R SSM3J356R. 1. Applications. 2. Features. 3. Packaging and Pin Assignment Rev.3.0. Silicon P-Channel MOS (U-MOS )

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 ) Symbol V RRM I F(DC) I FP. I 2 t. T j T stg TOR

TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC5200

TPW1R005PL TPW1R005PL. 1. Applications. 2. Features. 3. Packaging and Internal Circuit Rev Toshiba Corporation

SSM6K202FE SSM6K202FE. High-Speed Switching Applications Power Management Switch Applications. Absolute Maximum Ratings (Ta = 25 C)

SSM6N55NU SSM6N55NU. 1. Applications. 2. Features. 3. Packaging and Pin Configuration Rev.2.0. Silicon N-Channel MOS

TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CMS (Note 1)

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142

TLP4227G, TLP4227G-2

TLP3902 TLP3902 SOLID STATE RELAY PROGRAMMABLE CONTROLLERS MOSFET GATE DRIVER. Features. Pin Configuration (top view)

TOSHIBA Schottky Barrier Diode CRS12

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198. JEITA Storage temperature range T stg 55 to 150 C

TPCC8103 TPCC8103. Notebook PC Applications Portable Equipment Applications. Absolute Maximum Ratings (Ta = 25 C) Circuit Configuration

Transcription:

TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC7SF/FU/FE TC7SF, TC7SFU, TC7SFE Single Operational Amplifier The TC7SF/TC7SFU/TC7SFE is a CMOS singleoperation amplifier which incorporates a phase compensation circuit. It is designed for use with a low-voltage, low-current power supply; this differentiates this device from conventional general-purpose bipolar op-amps. TC7SF Features Low-voltage operation : = ±.9 to. V or.8 to 7 V Low-current power supply : I DD ( = V) = μa (typ.) Built-in phase-compensated op-amp, obviating the need for any external device Ultra-compact package TC7SFU TC7SFE Absolute Maximum Ratings () Characteristics Symbol Rating Unit Supply voltage, V SS 7 V Differential input voltage DV IN ±7 V Input voltage V IN to V SS V Weight SSOP-P-.9 :. g (typ.) SSOP-P-.6A :.6 g (typ.) SON-P-. :. g (typ.) Power dissipation TC7SF/FU P D TC7SFE Operating temperature T opr to 8 C Storage temperature T stg to C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions / Derating Concept and Methods ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). mw Start of commercial production 99- --

Marking (top view) Pin Connection (top view) OUT S F IN (+) V SS IN ( ) Electrical Characteristics DC Characteristics ( =. V, V SS = GND, ) Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Input offset voltage V IO R S = kω mv Input offset current I IO pa Input bias current I I pa Common mode input voltage CMV IN.. V Voltage gain (open loop) G V 6 7 db Maximum output voltage V OH R L MΩ.9 V OL R L MΩ. V Common mode input signal Rejection Ratio CMRR V IN =. to. V 6 7 db Supply voltage rejection ratio SVRR =.8 to 7. V 6 7 db Supply current I DD μa Source current I source 6 μa Sink current I sink 7 μa DC Characteristics ( =.8 V, V SS = GND, ) Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Input offset voltage V IO R S = kω mv Input offset current I IO pa Input bias current I I pa Common mode input voltage CMV IN..9 V Voltage gain (open loop) G V 6 7 db Maximum output voltage V OH R L MΩ.7 V OL R L MΩ. V Supply current I DD 8 6 μa Source current I source 6 8 6 μa Sink current I sink 7 μa --

AC Characteristics ( =. V, V SS = GND, ) Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Slew rate SR.8 V/μs Unity gain cross frequency f T 6 khz AC Characteristics ( =.8 V, V SS = GND, ) Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Slew rate SR.6 V/μs Unity gain cross frequency f T khz Test Circuit. SVRR, V IO R S R F SVRR For each of the two values, measure the V OUT value, as indicated below, and calculate the value of SVRR using the equation shown. When =.8 V, = and V OUT = V OUT When = 7. V, = and V OUT = V OUT R S RF V OUT VOUT VOUT R SVRR og = λ S VDD VDD R F + R S / V IO Measure the value of V OUT and calculate the value of V IO using the following equation. VDD VIO = VOUT RS RF + RS. CMRR, CMV IN V IN R S R S RF R F V OUT CMRR Measure the V OUT value, as indicated below, and calculate the value of the CMRR using the equation shown. When V IN =. V, V IN = V IN and V OUT = V OUT When V IN =. V, V IN = V IN and V OUT = V OUT VOUT VOUT CMRR og = λ RS VIN VIN RF + RS / CMV IN Input range within which the CMRR specification guarantees V OUT value (as varied by the V IN value). --

. V OH V OH VDD VIN=. V V OH VDD VIN = +. V RL V IN V IN. V OL V OL VDD VIN = +. V RL V OL VDD VIN =. V V IN V IN. I DD M I DD / 6. I source 7. I sink M M --

Supply current IDD (μa) 6 8 I DD VIN = VDD/ Voltage gain GV (db) 8 G V f VDD = V 6 7 Supply voltage (V) k k k M M Frequency f (Hz) Sink current Isink (μa) 8 6 I sink Low-level output voltage VOL (V)..6..8. V OL I sink VDD =.8 V 6 7 Supply voltage (V) 6 8 Sink current I sink (μa) Low-level output voltage VOL (V) V OL I sink VDD =. V Low-level output voltage VOL (V) V OL I sink VDD =. V 6 8 6 8 Sink current I sink (μa) Sink current I sink (μa) --

Source current Isource (μa) I source..6..8. V OH I source VDD =.8 V 6 7 Supply voltage (V) 8 6 8 Source current I source (μa) V OH I source VDD =. V 8 6 8 V OH I source VDD =. V 8 6 8 Source current I source (μa) Source current I source (μa)..6..8. VDD =.8 V V OH R L VDD =. V V OH R L k k M M k k M M Load resistance R L (Ω) Load resistance R L (Ω) 6 --

V OH R L P D Ta VDD =. V Power dissipation PD (mw) This data was obtained from an unmounted standalone IC. If the IC is mounted on a PCB, its power dissipation will be greater. Note that, depending on the PCB s thermal characteristics, the curves may differ substantially from those shown. k k M M Load resistance R L (Ω) 8 Ambient temperature Ta ( C) 7 --

Package Dimensions Weight:. g (typ.) 8 --

Package Dimensions Weight:.6 g (typ.) 9 --

Package Dimensions Weight:. g (typ.) --

RESTRICTIONS ON PRODUCT USE Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your TOSHIBA sales representative. Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA () ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND () DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. --