SCHOTTKY ECTIFIE 5MQ040N 3 Amp I F(AV) = 3 Amp V = 40V Major atings and Characteristics Characteristics 5MQ040N Units I F DC 3 A V M 40 V I FSM @ tp = 5 µs sine 330 A V F @ 2Apk, T =25 C 0.43 V J range - 40 to 50 C Description/ Features The 5MQ040N Schottky rectifier is designed to be used for low-power applications where a reverse voltage of 40 volts is ancountered and surface mountable is required. Applications Switching power supplies Meter protection everse protection for power input to PC board circuits Battery isolation and charging Low threshold voltage diode Free-wheeling or by-pass diode Low voltage clamp Features Surface mountable Extremely low forward voltage Improved reverse blocking voltage capability relative to other similar size Schottky Compact size Case Styles 5MQ040N SMA www.irf.com
Voltage atings V Part number Max. DC everse Voltage (V) V WM Max. Working Peak everse Voltage (V) 5MQ040N 40 Absolute Maximum atings Parameters 5MQ Units Conditions I F(AV) Max. Average Forward Current 2. A 50% duty cycle @ T L = 05 C, rectangular wave form. * See Fig. 4 On PC board 9mm 2 island(.03mm thick copper pad area) I FSM Max. Peak One Cycle Non-epetitive 330 5µs Sine or 3µs ect. pulse Following any rated A load condition and Surge Current * See Fig. 6 40 0ms Sine or 6ms ect. pulse with rated V M applied E AS Non-epetitive Avalanche Energy 6.0 mj = 25 C, I AS = A, L = 2mH I A epetitive Avalanche Current.0 A Electrical Specifications Parameters 5MQ Units Conditions V FM Max. Forward Voltage Drop () 0.42 V @ A * See Fig. 0.49 V @ 2A = 25 C 0.34 I M V Max. everse Leakage Current () @ A 0.5 ma = 25 C 0.43 V * See Fig. 2 @ 2A 20 ma = 25 C = 25 C V = rated V V F(TO) Threshold Voltage 0.26 V = max. r t Forward Slope esistance 64.6 mω C T Typical Junction Capacitance 34 pf V = 0V DC, = 25 C, test signal = Mhz L S Typical Series Inductance 2.0 nh Measured lead to lead 5mm from package body dv/dt Max. Voltage ate of Change 0000 V/µs (ated V ) () Pulse Width < 300µs, Duty Cycle < 2% Thermal-Mechanical Specifications Parameters 5MQ Units Conditions Max. Junction Temperature ange (*) -40 to 50 C T stg Max. Storage Temperature ange -40 to 50 C thja Max. Thermal esistance Junction 80 C/W DC operation to Ambient wt Approximate Weight 0.07(0.002) g (oz.) Case Style SMA Similar D-64 Device Marking I3F < thermal runaway condition for a diode on its own heatsink (*) dptot dtj th( j-a) 2 www.irf.com
00 0 everse Current - I (ma) 0 0. 0.0 = 50 C 25 C 00 C 75 C 50 C 25 C Instantaneous Forward Current - I F (A) = 50 C = 25 C = 25 C 0.00 0 5 0 5 20 25 30 35 40 000 everse Voltage - V (V) Fig. 2 - Typical Peak everse Current Vs. everse Voltage 0. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Forward Voltage Drop - V FM (V) Fig. - Maximum Forward Voltage Drop Characteristics Junction Capacitance - C T (pf) 00 T = 25 C J 0 0 5 0 5 20 25 30 35 40 45 everse Voltage - V (V) Fig. 3 - Typical Junction Capacitance Vs. everse Voltage www.irf.com 3
Allowable Case Temperature - ( C) 50 40 30 DC 20 0 00 D = 0.20 90 D = 0.25 80 D = 0.33 D = 0.50 70 D = 0.75 60 Square wave (D = 0.50) 50 80% ated V applied 40 see note (2) 30 0 0.5.5 2 2.5 3 Average Power Loss - (Watts).6.4.2 0.8 0.6 0.4 0.2 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 MS Limit DC 0 0 0.5.5 2 2.5 3 Average Forward Current - I F(AV) (A) Fig. 4 - Maximum Average Forward Current Vs. Allowable Lead Temperature Average Forward Current - I F(AV) (A) Fig. 5 - Maximum Average Forward Dissipation Vs. Average Forward Current 000 Non-epetitive Surge Current - I FSM (A) At Any ated Load Condition And With ated V M Applied Following Surge 00 0 00 000 0000 Square Wave Pulse Duration - t p (microsec) Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration (2) Formula used: T C = - (Pd + Pd EV ) x thjc ; Pd = Forward Power Loss = I F(AV) x V FM @ (I F(AV) / D) (see Fig. 6); Pd EV = Inverse Power Loss = V x I ( - D); I @ V = 80% rated V 4 www.irf.com
Outline Table Device Marking: I3F CATHODE ANODE.40 (.055).60 (.062) 2.50 (.098) 2.90 (.4) 2 4.00 (.57) POLAITY 2 PAT NUMBE 4.60 (.8) 2.00 (.078) 2.44 (.096).52 (.006).305 (.02) 2.0 MAX. (.085 MAX. ).47 MIN. (.058 MIN.) 0.76 (.030).52 (.060) 4.80 (.88) 5.28 (.208).03 (.004).203 (.008).27 MIN. (.050 MIN.) 5.53 (.28) SOLDEING PAD Outline SMA Dimensions in millimeters and (inches) For recommended footprint and soldering techniques refer to application note #AN-994 Marking & Identification Each device has 2 rows for identification. The first row designates the device as manufactured by International ectifier, indicated by the letters "I", and the Part Number (indicates the current, the voltage rating and Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID. I3F VOLTAGE CUENT I LOGO YYWWX SITE ID WEEK 2nd digit of the YEA "Y" = st digit of the YEA "standard product" "P" = "Lead-Free" www.irf.com 5
Tape & eel Information Dimensions in millimetres and (inches) Ordering Information Table Device Code 5 M Q 040 N T - 2 3 4 5 6 7 - Current ating 2 - M = SMA 3 - Q = Schottky Q Series 4 - Voltage ating (040 = 40V) 5 - N = New SMA 6 - none= Box (000 pieces) T = Tape & eel (7500 pieces) 7 none= Standard Production PbF = Lead-Free Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on I's Web site. I WOLD HEADQUATES: 233 Kansas St., El Segundo, California 90245, USA Tel: (30) 252-705 TAC Fax: (30) 252-7309 Visit us at www.irf.com for sales contact information. 07/04 6 www.irf.com