TPCP87 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP87 Portable Equipment Applications Switching Applications Inverter Lighting Applications.±. 8. M A Unit: mm Small footprint due to small and thin package High DC current gain : hfe = to (IC =. A) Low collector-emitter saturation : VCE (sat) =. V (max) High-speed switching : tf = ns (typ.).7.6.9±. B.±. A.8±.. M B Maximum Ratings (Ta = C) S. S.7±..8±..8 +. -. Characteristics Symbol Rating Unit. +. -. Collector-base voltage V CBO V. +. -. Collector-emitter voltage V CEX 8 V V CEO V Emitter-base voltage V EBO 7 V Collector current DC (Note ) I C. Pulse (Note ) I CP. Base current I B ma Collector power dissipation (t = s) Collector power dissipation (DC) value at dual value at dual Pc (Note ) Pc (Note ).77.9.9. Junction temperature T j C Storage temperature range T stg to C Note : Please use devices on condition that the junction temperature is below C. Note : Mounted on FR board (glass epoxy,.6 mm thick, Cu area: 6 mm ) Note : on lower left on the marking indicates Pin. Weekly code: (Three digits) Week of manufacture ( for first week of year, continues up to or ) Year of manufacture (One low-order digits of calendar year) A W W.Emitter.Base.Emitter.Base JEDEC JEITA TOSHIBA.Collector 6.Collector 7.Collector 8.Collector Weight:.7 g (typ.) -VC Figure. Circuit configuration (Top View) 8 7 6 Figure. Marking (Note ) 8 7 6 87.8 +. -. Lot No. (Weekly code) Type --
TPCP87 Electrical Characteristics (Ta = C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I CBO V CB = V, I E = na Emitter cut-off current I EBO V EB = 7 V, I C = na Collector-emitter brakedown voltage V (BR) CEO I C = ma, I B = V DC current gain h FE () V CE = V, I C =. A h FE () V CE = V, I C = A Collector-emitter saturation voltage V CE (sat) I C = A, I B = ma. V Base-emitter saturation voltage V BE (sat) I C = A, I B = ma. V Collector output capacitance C ob V CB = V, I E =, f = MHz pf Rise time t r See Figure circuit diagram Switching time Storage time t stg V CC V, R L = Ω ns Fall time t f I B = I B =. ma Figure. Switching Time Test Circuit & Timing Chart µs VCC IB RL IB Input IB Output Duty cycle <% IB --
TPCP87 Ta = C 7 I C V CE 6 DC current gain hfe h FE I C VCE = V Ta = C C C IB = ma...6.8. Collector emitter voltage V CE (V)... Collector emitter saturation voltage VCE (sat) (V) V CE (sat) I C β =.... C Ta = C.. C Base-emitter saturation voltage VBE (sat) (V) V BE (sat) I C β =.. C Ta = C.. C I C V BE VCE = V Ta = C C C Collector power dissipation PC (W)..8.6.. () () P c Ta DC Operation Ta = C Mounted on an FR board glass epoxy,.6 mm thick, Cu area: 6 mm ) () () value at dual..8..6 6 8 6 Base emitter saturation voltage V BE (V) () Ambient temperature Ta ( C) --
TPCP87 r th t w Transient thermal resistance rth(j-a) ( C/W) Curves should be applied in thermal limited area. Ta = C Mounted on FR board (glass epoxy,.6 mm thick, Cu area: 6 mm ) () () value at dual... Pulse width t w (s) () () IC max (Pulsed) IC max (Continuous)* s * ms * DC Ta = C Safe operating area ms ms µs : Ta = C Note that the curves for ms, s and DC will be. different when the devices aren t mounted on an FR board (glass epoxy,.6 mm thick, Cu area: 6 mm ). These characteristic curves must be derated linearly with increase in temperature... Collector emitter voltage V CE (V) µs VCEO max Permissible power dissipation for Q PC (W)..8.6.. Permissible Power Dissipation for Simultaneous Operation DC Ta = C Mounted on an FR board glass epoxy,.6 mm thick, Cu area: 6 mm )...6.8. Permissible power dissipation for Q P C (W) Collector power dissipation at the single-device is.9w. Collector power dissipation at the single-device value at dual is.w. Collector power dissipation at the dual is set to.8w. --
TPCP87 RESTRICTIONS ON PRODUCT USE The information contained herein is subject to change without notice. 69EAA The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk. TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. --