X02xxxN SENSTE GTE SCR FETURES T(RMS) = 1.4 DRM = 200 t 800 Lw GT < 200 µ K G DESCRPTON The X02xxxN series f SCRs uses a high perfrmance TOP GLSS PNPN technlgy. These parts are intended fr general purpse high vlume applicatins using surface munt technlgy. SOT223 (Plastic) BSOLUTE RTNGS (limiting values) Symbl Parameter alue Unit T(RMS) * T() * TSM RMS n-state current (180 cnductin angle) Mean n-state current (180 cnductin angle) Nn repetitive surge peak n-state current (Tj initial = 25 C ) Ttab= 90 C 1.4 Ta=75 C Ttab= 90 C 0.9 Ta=75 C 4 tp = 8.3 ms 25 tp = ms 22.5 2 t 2 t alue fr fusing tp = ms 2.5 2 s d/dt Critical rate f rise f n-state current G = m dig /dt = 0.1 /µs. 30 /µs Tstg Tj Strage and perating junctin temperature range - 40, + 150-40, + 125 C Tl Maximum lead temperature fr sldering during s 260 C * : With 5cm2 cpper (e=35µm) surface under tab. Symbl Parameter ltage B D M N Unit DRM RRM Repetitive peak ff-state vltage Tj = 125 C RGK = 1KΩ 200 400 600 800 May 1998 Ed: 1 1/5
THERML RESSTNCES Symbl Parameter alue Unit Rth(j-a) Junctin t ambient * 60 C/W Rth(j-t) Junctin t tab fr DC 25 C/W * : With 5cm 2 cpper (e=35µm) surface under tab. GTE CHRCTERSTCS (maximum values) PG ()= W PGM = 3 W (tp = 20 µs) GM = (tp = 20 µs) ELECTRCL CHRCTERSTCS Symbl Test Cnditins Sensitivity 02 03 05 Unit GT D=12 (DC) RL=140Ω Tj= 25 C MN 20 20 µ MX 200 200 50 GT D=12 (DC) RL=140Ω Tj= 25 C MX GD D=DRM RL=3.3kΩ RGK = 1 KΩ Tj= 125 C MN 0.1 RGM RG =µ Tj= 25 C MN 8 tgd D=DRM TM= 3 x T() dg/dt = 0.1/µs G = m Tj= 25 C TYP 0.5 µs H T= 50m RGK = 1 KΩ Tj= 25 C MX 5 m L G=1m RGK = 1 KΩ Tj= 25 C MX 6 m TM TM= 2.8 tp= 380µs Tj= 25 C MX 1.5 DRM RRM D = DRM RGK = 1 KΩ R = RRM Tj= 25 C MX 5 µ Tj= 1 C MX 200 µ d/dt D=67%DRM RGK = 1 KΩ Tj= 1 C TYP 15 20 15 /µs tq TM= 3 x T() R=35 d/dt=/µs tp=0µs d/dt=2/µs D= 67%DRM RGK = 1 KΩ Tj= 1 C MX 0 µs ORDERNG NFORMTON SCR TOP GLSS CURRENT X 02 03 M N SENSTTY PCKGE : N = SOT223 OLTGE 2/5
Fig.1 : Maximum average pwer dissipatin versus average n-state current. Fig.2 : Crrelatin between maximum average pwer dissipatin and maximum allwable temperature (Tamb and Ttab). P(W) 1.4 360 O DC = 180 = 120 = 90 P(W) Ttab ( C) 1.4-85 Rth(j-a) Rth(j-t) -95-5 = 60 = 30 T() 1.4-115 Tamb ( C) 0 20 40 60 80 0 120-125 140 Fig.3 : verage n-state current versus tab temperature. Fig.4 : Relative variatin f thermal impedance junctin t ambient versus pulse duratin. T() 1.6 1.4 DC Zth(j-a)/Rth(j-a) 0 = 180 0. Standard ft print, e(cu)=35 m Ttab ( C) 0 20 30 40 50 60 70 80 90 0 1 120 130 tp(s) 1 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig.5 : Relative variatin f gate trigger current and hlding current versus junctin temperature. Fig.6 : Nn repetitive surge peak n-state current versus number f cycles. gt[tj] gt[tj=25 C] h[tj] h[tj=25 C] 1 9.0 8.0 7.0 6.0 5.0 gt 4.0 3.0 2.0 h -40-20 Tj( C) 0 20 40 60 80 0 120 140 TSM 25 20 15 5 Tj initial = 25 C Number f cycles 0 1 0 00 3/5
Fig.7 : Nn repetitive surge peak n-state current fr a sinusidal pulse with width : tp ms, and crrespnding value f 2 t. Fig.8 : On-state characteristics (maximum values). 0. 2 t( 2 s) TSM Tj initial = 25 C 0 TM TSM Tj initial 25 C Tj max 2 t 1 Tj max t =5 Rt =0.150 tp(ms) 1 1 TM () 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 4/5
PCKGE MECHNCL DT SOT223 (Plastic) 1 H E e e1 D B B1 S t 1 1 2 O C DMENSONS REF. Millimeters nches Min. Typ. Max. Min. Typ. Max. 1.50 1.70 59 67 1 2 0. 01 04 B 2.95 3.15 90 0.124 B1 5 5 26 33 C 5 0.35 14 D 6.30 6.70 48 64 e 2.3 91 e1 4.6 0.181 E 3.30 3.70 0.130 0.146 H 6.70 7.30 64 87 O 3 5 7 25 26 26 S 5 5 33 41 t 1. 1.30 43 51 max 1 min 16 max 2 min 16 max Weight : 0.11 g FOOT PRNT MRKNG Type X0202BN X0202DN X0202MN X0202NN X0203BN X0203DN X0203MN X0203NN X0205BN X0205DN X0205MN X0205NN Marking X2B X2D X2M X2N X3B X3D X3M X3N X5B X5D X5M X5N nfrmatin furnished is believed t be accurate and reliable. Hwever, STMicrelectrnics assumes n respnsibility fr the cnsequences f use f such infrmatin nr fr any infringement f patents r ther rights f third parties which may result frm its use. N license is granted by implicatin r therwise under any patent r patent rights f STMicrelectrnics. Specificatin mentined in this publicatin are subject t change withut ntice. This publicatin supersedes and replaces all infrmatin previusly supplied. STMicrelectrnics prducts are nt authrized fr use as critical cmpnents in life supprt devices r systems withut express written apprval f STMicrelectrnics. The ST lg is a trademark f STMicrelectrnics 1998 STMicrelectrnics Printed in taly ll Rights Reserved STMicrelectrnics GROUP OF COMPNES ustralia - Brazil - Canada - China - France - Germany - taly - Japan - Krea - Malaysia - Malta - Mrcc - The Netherlands - Singapre - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdm - U.S.. 5/5