.7, Low On Resistance, + V, +5 V, +3 V, ± 5 V, SPST Switches DESCRIPTION The DG9E and DG9E are monolithic single-pole-single-throw (SPST) analog switches. The DG9E has a normally closed function. The DG9E has a normally open function. Processed with high density BiCMOS technology, the parts achieve low resistance, fast switching speed, low power dissipation, high -3dB bandwidth, and low voltage logic control threshold. The DG9E and DG9E operate on single and dual supplies. Single supply voltage ranges from +3 V to +6 V while dual supply operation is recommended with ± 3 V to ± 8 V. Each switch conducts equally well in both direction when on, and blocks input voltages up to the supply levels when off. The low and flat on resistance over the full input signal voltage range brings excellent linearity, reduces insertion loss and signal distortion, makes them ideal for data acquisition and programmable gain control applications. These switch characters also make them ideal fit for audio signal switch and reed relay replacement. Operation temperature is specified from - C to +85 C. The DG9E and DG9E are available in 6 lead TSSOP packages. BENEFITS Wide operation voltage range Low signal errors and distortion Fast switching time Simple interfacing FEATURES 3 V to 6 V single supply or ± 3 thru ± 8 V dual supply operation Available Low on resistance:.7 typical at V. V logic compatible for control Available Bi-directional rail to rail signal switching Fast switching speed High bandwidth: 6 MHz Control logic input can be over Material categorization: for definitions of compliance please see www.vishay.com/doc?999 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details APPLICATIONS Automatic test equipment Data acquisition systems Meters and instruments Medical and healthcare systems Communication systems Audio and video signal routing Relay replacement Battery powered systems Computer peripherals Audio and video signal routing FUNCTIONAL BLOCK DIAGRAM AND P CONFIGURATION TSOP-6 6 COM 5 3 Top View Device Marking: DG9EDV = Mxxx TSOP-6 6 COM 5 3 Top View Device Marking: DG9EDV = Nxxx NC GND NO GND TRUTH TABLE LOGIC DG9E DG9E On Off Off On Notes Logic.8 V Logic. V Switches shown for logic input ORDERG FORMATION TEMP. RANGE PACKAGE PART NUMBER - C to +85 C 6-pin TSOP DG9EDT-GE3 DG9EDT-GE3 S8-59-Rev. A, 5-Jun-8 Document Number: 75 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
ABSOLUTE MAXIMUM RATGS PARAMETER LIMIT UNIT reference to -.3 to +8 -.3 to +8 reference to GND -.3 to +8 V GND reference to -.3 to +8 COM, NC, NO a () -.3 V to () +.3 V or 5 ma, whichever occurs first - Continuous current (any terminal) 5 Peak current, NO, NC or COM (pulsed at ms, % duty cycle) ma Storage temperature -65 to +5 C Power dissipation (packages) b 6-pin TSOP c 57 mw ESD / HBM JS- ESD / CDM JS- V Latch up per JEDEC78 3 ma Notes a. Signals on NO, NC, COM exceeding or will be clamped by internal diodes. Limit forward diode current to maximum current ratings b. All leads welded or soldered to PC board c. Derate 7 mw/ C above 5 C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TEMP. b SPECIFICATIONS a (Single supply V) PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED LIMITS - C to +85 C UNIT = V, = V, V =. V,.8 V f M. d TYP. c MAX. d Analog Switch Analog signal range a V ANALOG Full - V Drain-source =.8 V, = V, Room -.7.7 R on-resistance DS(on), V COM = V / 9 V Full - - 3. Room - ±. I NO/NC(off) Switch off Full - ±.6 leakage current g V COM = V / V, V NO/NC = V / V Room - ±. I COM(off) na Full - ±.3 Channel-on Room - ±. leakage current g I COM(on) V NO/NC = V COM = V / V Full - ±.5 Digital Control Input current, V low I IL V under test =.8 V Full -. Input current, V high I IH V under test =. V Full -. Dynamic Characteristics Turn-on time e Room - 8 36 t ON Full - - R L = 3, C L = 35 pf, V S = 5 V Turn-off time e Room - t OFF Full - - ns Charge injection e Q V g = V, R g =, C L = nf Room - 9 - pc Bandwidth e BW R L = 5, C L = 5 pf Room - 6 - MHz Off-isolation e OIRR R L = 5, C L = 5 pf, f = MHz Room - -58 - db Source off capacitance e C NO/NC(off) Room - 3 - Drain off capacitance e C COM(off) f = MHz Room - 36 - pf Channel on capacitance e C COM(on) Room - 68 - Power Supplies Positive supply current I+ Room -. Full - - 5 Negative supply current I- V = V or V Room - -. - Full -5 - - Room - -. - Ground current I GND Full -5 - - S8-59-Rev. A, 5-Jun-8 Document Number: 75 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SPECIFICATIONS a (Dual supply ± 5 V) PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED = 5 V, = -5 V, V =. V,.8 V f TEMP. b LIMITS - C to +85 C UNIT M. d TYP. c MAX. d Analog Switch Analog signal range e V ANALOG Full -5-5 V Drain-source = 5 V, = 5 V Room -.9.9 R on-resistance DS(on), V COM = ± 3.5 V Full - - 3. Room - ±. I NO/NC(off) Switch off = 5.5 V, = 5.5 V Full - ±. leakage current g V COM = ±.5 V, V NO/NC =.5 V Room - ±.3 I COM(off) na Full - ±.88 Channel-on = 5.5 V, = -5.5 V Room - ±. leakage current g I COM(on) V NO/NC = V COM = ±.5 V Full - ±.5 Digital Control Input current, V low e I IL V under test =.8 V Full -. Input current, V high e I IH V under test =. V Full -. Dynamic Characteristics Room - 39 5 Turn-on time t ON Full - - 6 R L = 3, C L = 35 pf, V S = ± 3.5 V Room - 8 33 Turn-off time t OFF Full - - ns Charge injection e Q V g = V, R g =, C L = nf Room - 57 - pc Bandwidth e BW R L = 5, C L = 5 pf Room - 79 - MHz Off-isolation e OIRR R L = 5, C L = 5 pf, f = MHz Room - -58 - db Source off capacitance e C NO/NC(off) Room - 3 - Drain off capacitance e C COM(off) f = MHz Room - 36 - pf Channel on capacitance e C COM(on) Room - 68 - Power Supplies Positive supply current e I+ Room -. Full - - 5 Negative supply current e Room - -. - I- V = V or 5 V Full -5 - - Ground current e Room - -. - I GND Full -5 - - S8-59-Rev. A, 5-Jun-8 3 Document Number: 75 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SPECIFICATIONS a (Single supply 5 V) PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED = 5 V, = V, V =. V,.8 V f TEMP. b LIMITS - C to +85 C UNIT M. d TYP. c MAX. d Analog Switch Analog signal range e V ANALOG Full - 5 V Drain-source =.5 V, I R NO/NC = 5 ma, Room - 3. 5. on-resistance DS(on) V COM = V, 3.5 V Full - - 7 Dynamic Characteristics Turn-on time e Room - 57 8 t ON Hot - - 95 R L = 3, C L = 35 pf, V S = 3.5 V Turn-off time e Room - 3 t OFF Hot - - ns Charge injection e Q V g = V, R g =, C L = nf Room - - pc Power Supplies Positive supply current e I+ Room -. Hot - - 5 Negative supply current e Room - -. - I- V = V or 5 V Hot -5 - - Ground current e Room - -. - I GND Hot -5 - - S8-59-Rev. A, 5-Jun-8 Document Number: 75 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SPECIFICATIONS a (Single supply 3 V) PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED = 3 V, = V, V =. V,. V f TEMP. b LIMITS - C to +85 C UNIT M. d TYP. c MAX. d Analog Switch Analog signal range e V ANALOG Full - 3 V Drain-source =.7 V, = V Room - 7.3.5 R on-resistance DS(on), V COM =.5 V,. V Full - - 8 Room - ±.3 I NO/NC(off) Switch off = 3.3 V, = V Full - ±.9 leakage current g V NO/NC = V, V, V COM = V, V Room - ±.8 I COM(off) Full - ±. na Channel-on = 3.3 V, = V Room - ±. leakage current g I COM(on) V COM = V NO/NC = V, V Full - ±. Digital Control Input current, V low e I IL V under test =. V Full -. Input current, V high e I IH V under test =. V Full -. Dynamic Characteristics Room - 5 Turn-on time t ON Full - - R L = 3, C L = 35 pf, V S =.5 V Room - 58 Turn-off time t OFF Full - - 6 ns Charge injection e Q V g = V, R g =, C L = nf Room - 6 - pc Off-isolation e OIRR R L = 5, C L = 5 pf, f = MHz Room - -58 - db Source off capacitance e C NO/NC(off) Room - 36 - Drain off capacitance e C COM(off) f = MHz Room - 38 - pf Channel on capacitance e C COM(on) Room - 7 - Notes a. Refer to PROCESS OPTION FLOWCHART b. Room = 5 C, full = as determined by the operating temperature suffix c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet e. Guaranteed by design, not subject to production test f. V = input voltage to perform proper function g. Leakage parameters are guaranteed by worst case test conditions and not subject to test S8-59-Rev. A, 5-Jun-8 5 Document Number: 75 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) = +.7 V 3 +85 C 8 6 = +3. V = +3.3 V = +5. V = + V = +6 V 3 5 6 7 8 9 356 +5 C - C V± = ± 5 V -6-5 - -3 - - 3 5 6 R ON vs. V COM and Single Supply Voltage R DS(on) vs. Analog Voltage and Temperature.5 5.5 V± = ± 5 V V± = ± 8 V.5-9 -8-7 -6-5 - -3 - - 3 5 6 7 8 9 3 = +5 V +85 C +5 C 3 5 - C R ON vs. V COM and Dual Supply Voltage R DS(on) vs. Analog Voltage and Temperature 3 +85 C +5 C - C = + V 3 5 6 7 8 9 8 6 - C +85 C 3 = +3 V +5 C R DS(on) vs. Analog Voltage and Temperature R DS(on) vs. Analog Voltage and Temperature S8-59-Rev. A, 5-Jun-8 6 Document Number: 75 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) Leakage Current (pa) 5 5 I COM(ON),V COM = V I NO/NC(OFF),V COM = V, V NO/NC = V I NO/NC(OFF),V COM = V, V NO/NC = V I COM(ON),V COM = V I COM(OFF),V COM = V, V NO/NC = V = + V I COM(OFF),V COM = V, V NO/NC = V -5 - - 6 8 I+ - Supply Current (na) 8 6 8 6 = +5 V = or GND = + V = or GND = +3 V = or GND - - 6 8 Leakage Current vs. Temperature Supply Current vs. Temperature Leakage Current (pa) 5 5 I COM(ON),V COM =.5 V I NO/NC(OFF),V COM = -.5 V, V NO/NC = +.5 V I NO/NC(OFF),V COM =.5 V, V NO/NC = -.5 V I COM(ON),V COM = -.5 V I COM(OFF),V COM =.5 V, V NO/NC =-.5 V V± = ± 5.5 V I COM(OFF),V COM = -.5 V, V NO/NC =.5 V -5 - - 6 8 Loss, OIRR (db) - - -3 - -5-6 -7-8 -9 Loss OIRR - = + V - K M M M G Frequency (Hz) Leakage Current vs. Temperature Insertion Loss, Off-Isolation vs. Frequency Leakage Current (pa) 5 5 I COM(ON),V COM = V I NO/NC(OFF),V COM = V, V NO/NC = V I NO/NC(OFF),V COM = V, V NO/NC = V I COM(ON),V COM = V I COM(OFF),V COM = V, V NO/NC = V = 3.3 V I COM(OFF),V COM = V, V NO/NC = V -5 - - 6 8 Loss, OIRR (db) Loss - - -3 - -5-6 OIRR -7-8 -9 - V± = ±5 V - K M M M G Frequency (Hz) Leakage Current vs. Temperature Insertion Loss, Off-Isolation vs. Frequency S8-59-Rev. A, 5-Jun-8 7 Document Number: 75 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) I+ - Supply Current (µa).... = + V = +5 V = +3 V. K K M M Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency t ON, t OFF -Switching Time (ns) 5 3 = + V, t OFF V± = ± 5. V, t ON = + V, t ON V± = ± 5. V, t OFF -5 5 Switching Time vs. Temperature I CC - Supply Current (µa).... V± = ± 5 V I+ I GND. K M Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency I- V - Switching Threshold (V) 3..8.6....8.6....8.6.. - C to +85 C V H V L 3 5 6 7 8 9 35678 - Supply Voltage (V) Switching Threshold vs. Supply Voltage t ON, t OFF -Switching Time (ns) 8 6 = +3 V, t ON = +3 V, t OFF = +5 V, t ON = +5 V, t OFF I+ - Supply Current (µa).... = 5 V = 3. V = V -5 5. 5.. 5. V (V) Switching Time vs. Temperature Supply Current vs. Enable Input Voltage S8-59-Rev. A, 5-Jun-8 8 Document Number: 75 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
TYPICAL CHARACTERISTICS (5 C, unless otherwise noted). 8. V± = ± 5 V = V Q J - Charge Injection (pc) 6... -. -. = 3 V -6. = 5 V -8. - -5 5 5 V NO/NC - Analog Voltage (V) Charge Injection vs. Analog Voltage SCHEMATIC DIAGRAM (typical channel) NC/NO buffer Level shifter Body snatcher PCH Body snatcher GND COM V S8-59-Rev. A, 5-Jun-8 9 Document Number: 75 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
TEST CIRCUITS V S S GND D R L 3 C L (includes fixture and stray capacitance) C L 35 pf Logic input Switch input () Switch output Switch input () V NC/NO V V S V 5 % t ON 9 % t OFF t r < 5 ns t f < 5 ns 9 % - V S = V S R L R L + r DS(on) Note () Logic input waveform is inverted for switches that have the opposite logic sense control Fig. - Switching Time Δ R g S D X OFF ON OFF V g 3 V GND C L nf X OFF ON Q = Δ x C L OFF X dependent on switch configuration Input polarity determined by sense of switch. Fig. - Charge Injection V S R g = 5 V,. V C S D GND C R L 5 V,. V S D C Meter HP9A impedance analyzer or equivalent GND C V S Off isolation = log C = RF Bypass Fig. 3 - Off Isolation Fig. - Source/Drain Capacitances maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75. S8-59-Rev. A, 5-Jun-8 Document Number: 75 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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