General Description The MDF9N6 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N6 is suitable device for SMPS, high Speed switching and general purpose applications. MDF9N6 N-Channel MOSFET 6V, 9A,.75Ω Features V DS = 6V V DS = 66V @ T jmax = 9.A @ V GS = V R DS(ON).75Ω @ V GS = V Applications Power Supply PFC High Current, High Speed Switching G D S Absolute Maximum Ratings (Ta = 25 o C) Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 6 V Drain-Source Voltage @ Tjmax V DSS @ T jmax 66 V Gate-Source Voltage V GSS ±3 V Continuous Drain Current ( ) T C=25 o C 9. A T C= o C 5.7 A Pulsed Drain Current (1) M 32 A Power Dissipation Repetitive Avalanche Energy E AR (1) T C=25 o C 48 Derate above 25 o C P D.38 W W/ o C E AR 4.8 mj Peak Diode Recovery dv/dt (3) Dv/dt 4.5 V/ns Single Pulse Avalanche Energy (4) E AS 48 mj Junction and Storage Range T J, T stg -55~15 Id limited by maximum junction temperature o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (1) R θja 62.5 Thermal Resistance, Junction-to-Case (1) R θjc 2.62 o C/W 1
Ordering Information Part Number Temp. Range Package Packing RoHS Status MDF9N6TH -55~15 o C TO-22F Tube Halogen Free Electrical Characteristics (Ta =25 o C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV DSS = 25µA, V GS = V 6 - - Gate Threshold Voltage V GS(th) V DS = V GS, = 25µA 3. - 5. Drain Cut-Off Current SS V DS = 6V, V GS = V - - 1 µa Gate Leakage Current I GSS V GS = ±3V, V DS = V - - na Drain-Source ON Resistance R DS(ON) V GS = V, = 4.5A.65.75 Ω Forward Transconductance g fs V DS = 3V, = 4.5A - 7. - S Dynamic Characteristics Total Gate Charge Q g - 27 - Gate-Source Charge Q gs V DS = 48V, = 9.A, V GS = V (3) - 8.2 - Gate-Drain Charge -.7 - Q gd Input Capacitance C iss - 116 Reverse Transfer Capacitance C rss V DS = 25V, V GS = V, f = 1.MHz - 6.2 Output Capacitance C oss - 134 Turn-On Delay Time t d(on) - 31 Rise Time t r V GS = V, V DS = 3V, = 9.A, - 59 Turn-Off Delay Time t d(off) R G = 25Ω (3) - 48 Fall Time Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge t f - 3 I S - 11 - A V SD I S = 9.A, V GS = V - 1.4 V I F = 9.A, dl/dt = A/µs (3) t rr - 36 ns - 3.9 µc Q rr V nc pf ns Note : 1. Pulse width is based on R θjc & R θja and the maximum allowed junction temperature of 15 C. 2. Pulse test: pulse width 3us, duty cycle 2%, pulse width limited by junction temperature T J(MAX)=15 C. 3. I SD 9.A, di/dt 2A/us, V DD=5V, R g =25Ω, Starting T J=25 C 4. L=.8mH, I AS=9.A, V DD=5V, R g =25Ω, Starting T J=25 C 2
,Drain Current [A] 2 15 5 V gs =5.5V =6.V =6.5V =7.V =8.V =.V =15.V Notes 1. 25 μs Pulse Test 2. T C =25 5 15 2 V DS,Drain-Source Voltage [V] Fig.1 On-Region Characteristics R DS(ON) [Ω ] 1.5 1. V GS =.V V GS =2V.5 5 15 2 25,Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage 3. 1.2 R DS(ON), (Normalized) Drain-Source On-Resistance 2.5 2. 1.5 1..5 1. V GS = V 2. = 4.5 A BV DSS, (Normalized) Drain-Source Breakdown Voltage 1.1 1..9 1. V GS = V 2. 25 µs Pulse Test. - -5 5 15 2 T J, Junction [ o C] Fig.3 On-Resistance Variation with.8-5 5 15 2 T J, Junction [ o C] Fig.4 Breakdown Voltage Variation vs. [A] 1 * Notes ; 1. V DS =3V 15 25-55 R Reverse Drain Current [A] 1 1. V GS = V 2. = 25 μa 15 25.1 2 4 6 8 V GS [V] Fig.5 Transfer Characteristics.1..2.4.6.8 1. 1.2 1.4 V SD, Source-Drain Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and 3
V GS, Gate-Source Voltage [V] 8 6 4 2 Note : I = 9A D 2 4 6 8 12 14 16 18 2 22 24 26 28 3 Q G, Total Gate Charge [nc] 12V 3V 48V Capacitance [pf] 2 15 5 C oss C iss C rss 1 V DS, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Notes ; 1. V GS = V 2. f = 1 MHz Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics 2 Operation in This Area is Limited by R DS(on) µs, Drain Current [A] 1-1 Single Pulse T J =Max rated T C =25 DC µs 1 ms ms ms 1s, Drain Current [A] 8 6 4 2-2 -1 1 2 V DS, Drain-Source Voltage [V] 25 5 75 125 15 T C, Case [ ] Fig.9 Maximum Safe Operating Area Fig. Maximum Drain Current vs. Case 16 D=.5.2 14 12 single Pulse R thjc = 2.62 /W T C = 25 Z θ JC (t), Thermal Response -1-2.1.5.2.1 single pulse Duty Factor, D=t 1 /t 2 PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JC =2.62 /W -5-4 -3-2 -1 1 t 1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Power (W) 8 6 4 2 1E-5 1E-4 1E-3.1.1 1 Pulse Width (s) Fig.12 Single Pulse Maximum Power Dissipation 4
Physical Dimensions 3 Leads, TO-22F Dimensions are in millimeters unless otherwise specified Symbol Min Nom Max A 4.5 4.93 b.63.91 b1 1.15 1.47 C.33.63 D 15.47 16.13 E 9.6.71 e 2.54 F 2.34 2.84 G 6.48 6.9 L 12.24 13.72 L1 2.79 3.67 Q 2.52 2.96 Q 1 3. 3.5 R 3. 3.55 5
Worldwide Sales Support Locations U.S.A Sunnyvale Office 787 N. Mary Ave. Sunnyvale CA 9485 U.S.A Tel : 1-48-636-52 Fax : 1-48-213-245 E-Mail : usasales@magnachip.com U.K Knyvett House The Causeway, Staines Middx, TW18 3BA,U.K. Tel : +44 () 1784-895- Fax : +44 () 1784-895-115 E-Mail : uksales@magnachip.com China Hong Kong Office Suite 24, Ocean Centre 5 Canton Road, Tsim Sha Tsui Kowloon, Hong Kong Tel : 852-2828-97 Fax : 852-282-8183 E-Mail : chinasales@magnachip.com Shenzhen Office Room 183, 18/F International Chamber of Commerce Tower Fuhua Road3 CBD, Futian District, China Tel : 86-755-8831-5561 Fax : 86-755-8831-5565 E-Mail : chinasales@magnachip.com Japan Osaka Office 3F, Shin-Osaka MT-2 Bldg 3-5-36 Miyahara Yodogawa-Ku Osaka, 532-3 Japan Tel : 81-6-6394-916 Fax : 81-6-6394-915 E-Mail : osakasales@magnachip.com Taiwan R.O.C 2F, No.61, Chowize Street, Nei Hu Taipei,114 Taiwan R.O.C Tel : 886-2-2657-7898 Fax : 886-2-2657-8751 E-Mail : taiwansales@magnachip.com Shanghai Office Room E, 8/F, Liaoshen International Building 68 Wuzhong Road, (C) 213 Shanghai, China Tel : 86-21-645-1521 Fax : 86-21-655-1523 E-Mail : chinasales@magnachip.com Korea 891, Daechi-Dong, Kangnam-Gu Seoul, 135-738 Korea Tel : 82-2-693-3451 Fax : 82-2-693-3668 ~9 Email : koreasales@magnachip.com DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller s customers using or selling Seller s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. \ MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. 6