General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. MDDN6/MDIN6 N-Channel MOSFET 6V,.9A,.5Ω Features V DS = 6V =.9A @ V GS = V R DS(ON).5Ω @ V GS = V Applications Power Supply PFC High Current, High Speed Switching D G D S I-PAK (TO-5) G Absolute Maximum Ratings (Ta = 5 o C) Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 6 V Gate-Source Voltage V GSS ± V Continuous Drain Current T C=5 o C.9 A T C= o C. A Pulsed Drain Current () M 7.6 A Power Dissipation T C=5 o C Derate above 5 o C Repetitive Avalanche Energy () E AR. mj Peak Diode Recovery dv/dt () dv/dt.5 V/ns Single Pulse Avalanche Energy () E AS 5 mj Junction and Storage Range T J, T stg -55~5 * Id limited by maximum junction temperature P D. S W W/ o C o C Thermal Characteristics Characteristics Symbol MDDN6/MDIN6 Unit Thermal Resistance, Junction-to-Ambient () R θja Thermal Resistance, Junction-to-Case () R θjc.98 o C/W
Ordering Information Part Number Temp. Range Package Packing RoHS Status MDDN6RH -55~5 o C D-pak Reel Halogen Free MDIN6TH -55~5 o C I-pak Tube Halogen Free Electrical Characteristics (Ta =5 o C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV DSS = 5µA, V GS = V 6 - - Gate Threshold Voltage V GS(th) V DS = V GS, = 5µA. - 5. Drain Cut-Off Current SS V DS = 6V, V GS = V - - µa Gate Leakage Current I GSS V GS = ±V, V DS = V - - na Drain-Source ON Resistance R DS(ON) V GS = V, =.95A.6.5 Ω Forward Transconductance g fs V DS = V, =.A -.5 - S Dynamic Characteristics Total Gate Charge Q g - 6.7 Gate-Source Charge Q gs V DS = 8V, =.A, V GS = V () -. Gate-Drain Charge -.5 Q gd Input Capacitance C iss - 75 6 Reverse Transfer Capacitance C rss V DS = 5V, V GS = V, f =.MHz -. Output Capacitance C oss - Turn-On Delay Time t d(on) -.6 Rise Time t r V GS = V, V DS = V, =.A, - 9.6 Turn-Off Delay Time t d(off) R G = 5Ω () -. Fall Time Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge t f - 8. I S -.6 - A V SD I S =.9A, V GS = V -. V I F =.A, dl/dt = A/µs () t rr - 6 ns -.76 µc Q rr V nc pf ns Note :. Pulse width is based on R θjc & R θja and the maximum allowed junction temperature of 5 C.. Pulse test: pulse width us, duty cycle %, pulse width limited by junction temperature T J(MAX)=5 C.. I SD.A, di/dt A/us, V DD=5V, R g =5Ω, Starting T J=5 C. L=5mH, I AS=.A, V DD=5V, R g =5Ω, Starting T J=5 C,
,Drain Current [A] V gs =5.5V =6.V =6.5V =7.V =8.V =.V =5.V 5 5 V DS,Drain-Source Voltage [V] Fig. On-Region Characteristics Notes. 5 μs Pulse Test. T C =5 R DS(ON) [Ω ] 8 7 6 5 V GS =.V V GS =V 6,Drain Current [A] Fig. On-Resistance Variation with Drain Current and Gate Voltage.. R DS(ON), (Normalized) Drain-Source On-Resistance.5..5..5. V GS = V. =.95A BV DSS, (Normalized) Drain-Source Breakdown Voltage...9. V GS = V. = 5 μa. -5 5 5 T J, Junction [ o C] Fig. On-Resistance Variation with.8-5 5 5 T J, Junction [ o C] Fig. Breakdown Voltage Variation vs. (A) * Notes ;. Vds=V 5 5-55 R Reverse Drain Current [A]. V GS = V.5µs Pulse test 5 5. 6 8 V GS [V] Fig.5 Transfer Characteristics.....6.8.. V SD, Source-Drain Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and
V GS, Gate-Source Voltage [V] 8 6 Note : I =.A D 6 8 Q G, Total Gate Charge [nc] Fig.7 Gate Charge Characteristics V V 8V Capacitance [pf] 5 C oss C iss C rss V DS, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Fig.8 Capacitance Characteristics Notes ;. V GS = V. f = MHz 5 Operation in This Area is Limited by R DS(on) single Pulse R thjc =.98 /W T C = 5, Drain Current [A] - ms ms DC ms µs Power (W) - Single Pulse T J =Max rated T C =5 - V DS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area E-5 E- E-.. Pulse Width (s) Fig. Single Pulse Maximum Power Dissipation D=.5 Z θ JC (t), Thermal Response -...5.. Duty Factor, D=t /t, Drain Current [A] single pulse PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JC =.98 /W - -5 - - - - t, Rectangular Pulse Duration [sec] Fig. Transient Thermal Response Curve 5 5 75 5 5 T C, Case [ ] Fig. Maximum Drain Current vs. Case
Physical Dimension TO-5 (DPAK) Dimensions are in millimeters, unless otherwise specified 5
Physical Dimension TO5 (IPAK) Dimensions are in millimeters, unless otherwise specified 6
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