Ultrafast Rectifier, 8 FRED Pt TO-263 (D 2 PK) ase cathode 2 TO-262 2 FETURES Ultrafast recovery time Low forward voltage drop Low leakage current 175 C operating junction temperature Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C EC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 3 1 3 N/C node N/C node VS-8ETU04SPbF VS-8ETU04-1PbF PRODUCT SUMMRY Package TO-263 (D 2 PK), TO-262 I F(V) 8 V R 400 V V F at I F 0.94 V t rr typ. 35 ns T J max. 175 C Diode variation Single die DESCRIPTION / PPLICTIONS FRED Pt series are the state of the art ultrafast recovery rectifiers specifically designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. SOLUTE MXIMUM RTINGS PRMETER SYMOL TEST CONDITIONS MX. UNITS Repetitive peak reverse voltage V RRM 400 V verage rectified forward current I F(V) T C = 155 C 8 Non-repetitive peak surge current I FSM T C = 25 C 100 Repetitive peak forward current I FRM 16 Operating junction and storage temperatures T J, T Stg -65 to +175 C ELECTRICL SPECIFICTIONS (T J = 25 C unless otherwise specified) PRMETER SYMOL TEST CONDITIONS MIN. TYP. MX. UNITS reakdown voltage, blocking voltage V R, V R I R = 100 μ 400 - - I F = 8-1.19 1.3 Forward voltage V F I F = 8, T J = 150 C - 0.94 1.0 V R = V R rated - 0.2 10 Reverse leakage current I R T J = 150 C, V R = V R rated - 20 500 μ Junction capacitance C T V R = 400 V - 14 - pf Series inductance L S Measured lead to lead 5 mm from package body - 8.0 - nh V Revision: 10-Jul-15 1 Document Number: 94031 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?91000
DYNMIC RECOVERY CHRCTERISTICS (T J = 25 C unless otherwise specified) PRMETER SYMOL TEST CONDITIONS MIN. TYP. MX. UNITS Reverse recovery time t rr T J = 25 C - 43 - ns I F = 1.0, di F /dt = 50 /μs, V R = 30 V - 35 60 T J = 125 C - 67 - Peak recovery current I RRM T I F = 8 J = 25 C - 2.8 - di F /dt = 200 /μs T J = 125 C V R = 200 V - 6.3 - T J = 25 C - 60 - Reverse recovery charge Q rr T J = 125 C - 210 - nc THERML - MECHNICL SPECIFICTIONS PRMETER SYMOL TEST CONDITIONS MIN. TYP. MX. UNITS Maximum junction and storage temperature range T J, T Stg -65-175 C Thermal resistance, junction to case R thjc - 1.8 2.0 Thermal resistance, junction to ambient R thj Typical socket mount - - 50 Mounting surface, flat, smooth Thermal resistance, case to heatsink R thcs - 0.5 - and greased Weight Mounting torque Marking device Case style TO-263 (D 2 PK) Case style TO-262 C/W - 2.0 - g - 0.07 - oz. 6.0 (5.0) - 12 (10) 8ETU04S 8ETU04-1 kgf cm (lbf in) Revision: 10-Jul-15 2 Document Number: 94031 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?91000
100 1000 I F - Instantaneous Forward Current () 10 1 T J = 175 C T J = 150 C T J = 25 C I R - Reverse Current (µ) 100 10 1 0.1 0.01 0.001 T J = 175 C T J = 150 C T J = 125 C T J = 100 C T J = 25 C 0.1 0 0.5 1.0 1.5 2.0 2.5 V F - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 0.0001 0 100 200 300 V R - Reverse Voltage (V) 400 Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 C T - Junction Capacitance (pf) 100 T J = 25 C 10 0 100 200 300 400 V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Impedance ( C/W) 10 1 D = 0.50 t 1 D = 0.20 0.1 D = 0.10 t 2 D = 0.05 Notes: Single pulse D = 0.02 1. Duty factor D = t 1 /t (thermal resistance) D = 0.01 2. 2. Peak T J = P DM x Z thjc + T C. 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics P DM Revision: 10-Jul-15 3 Document Number: 94031 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?91000
llowable Case Temperature ( C) 180 170 160 150 140 See note (1) 130 0 2 4 6 DC Square wave (D = 0.50) Rated V R applied 8 10 12 t rr (ns) 90 80 70 60 50 40 30 I F = 16 I F = 8 V R = 200 V T J = 125 C T J = 25 C 20 100 1000 I F(V) - verage Forward Current () di F /dt (/µs) Fig. 5 - Maximum llowable Case Temperature vs. verage Forward Current Fig. 7 - Typical Reverse Recovery Time vs. di F /dt verage Power Loss (W) 14 12 10 8 6 4 2 DC RMS limit D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 Q rr (nc) 500 450 400 350 300 250 200 150 100 50 V R = 200 V T J = 125 C T J = 25 C I F = 16 I F = 8 0 0 2 4 6 8 10 12 0 100 1000 I F(V) - verage Forward Current () di F /dt (/µs) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. di F /dt Note (1) Formula used: T C = T J - (Pd + Pd REV ) x R thjc ; Pd = Forward power loss = I F(V) x V FM at (I F(V) /D) (see fig. 6); Pd REV = Inverse power loss = V R1 x I R (1 - D); I R at V R1 = Rated V R Revision: 10-Jul-15 4 Document Number: 94031 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?91000
V R = 200 V L = 70 μh 0.01 Ω di F /dt adjust G D IRFP250 D.U.T. S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) t rr 0 I F t a tb (2) I RRM (4) Q rr 0.5 I RRM di (rec)m /dt (5) 0.75 I RRM (1) di F /dt (1) di F /dt - rate of change of current through zero crossing (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. (4) Q rr - area under curve defined by t rr and I RRM t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 10-Jul-15 5 Document Number: 94031 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?91000
ORDERING INFORMTION TLE Device code VS- 8 E T U 04 S TRL PbF 1 2 3 4 5 6 7 8 9 1 - product 2 - Current rating (8 ) 3 - E = single diode 4 - T = TO-220, D 2 PK 5 - U = ultrafast recovery 6 - Voltage rating (04 = 400 V) 7 - S = D 2 PK -1 = TO-262 8 - None = tube (50 pieces) TRL = tape and reel (left oriented, for D 2 PK package) TRR = tape and reel (right oriented, for D 2 PK package) 9 - PbF = lead (Pb)-free Dimensions Part marking information Packaging information LINKS TO RELTED DOCUMENTS www.vishay.com/doc?95014 www.vishay.com/doc?95008 www.vishay.com/doc?95032 Revision: 10-Jul-15 6 Document Number: 94031 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?91000
Outline Dimensions D 2 PK, TO-262 DIMENSIONS - D 2 PK in millimeters and inches Conforms to JEDEC outline D 2 PK (SMD-220) (3) L1 (2)(3) E 4 c2 (E) (D1) (3) Pad layout 11.00 MIN. (0.43) 9.65 MIN. (0.38) D L2 2 x e 1 2 3 H (2) 2 x b2 2 x b C Detail 0.010 M M c ± 0.004 M E1 View - H (3) 17.90 (0.70) 15.00 (0.625) 2.32 MIN. (0.08) Plating 2.64 (0.103) 2.41 (0.096) (4) b1, b3 3.81 MIN. (0.15) ase Metal Gauge plane Lead assignments Diodes 1. - node (two die)/open (one die) 2., 4. - Cathode 3. - node Lead tip 0 to 8 L3 L L4 Detail Rotated 90 CW Scale: 8:1 1 Seating plane (c) (b, b2) Section - and C - C Scale: None c1 (4) SYMOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3 b1 0.51 0.89 0.020 0.035 4 e 2.54 SC 0.100 SC b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 L1-1.65-0.066 3 c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070 c2 1.14 1.65 0.045 0.065 L3 0.25 SC 0.010 SC D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208 Notes (1) Dimensioning and tolerancing per SME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum and to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263 Document Number: 95014 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 31-Mar-09 Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com 1
Outline Dimensions D 2 PK, TO-262 DIMENSIONS - TO-262 in millimeters and inches Modified JEDEC outline TO-262 (Datum ) (2) (3) E (3) L1 c2 E D Seating plane D1(3) L2 1 2 C 3 C L (2) 2 x e 0.010 M M Lead tip 3 x b2 3 x b c Lead assignments 1 Diodes 1. - node (two die)/open (one die) 2., 4. - Cathode 3. - node Plating c E1 Section - (4) ase b1, b3 metal (b, b2) (3) c1 (4) Section - and C - C Scale: None SYMOL MILLIMETERS INCHES MIN. MX. MIN. MX. NOTES 4.06 4.83 0.160 0.190 1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 4 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 4 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 4 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 2 D1 6.86 8.00 0.270 0.315 3 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 e 2.54 SC 0.100 SC L 13.46 14.10 0.530 0.555 L1-1.65-0.065 3 L2 3.56 3.71 0.140 0.146 Notes (1) Dimensioning and tolerancing as per SME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Controlling dimension: inches (6) Outline conform to JEDEC TO-262 except 1 (maximum), b (minimum) and D1 (minimum) where dimensions derived the actual package outline www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 95014 2 Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com Revision: 31-Mar-09
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