J39, Preferred Device JFET VHF/UHF Amplifiers NChannel Depletion Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage V DS 25 Vdc Gate Source Voltage V GS 25 Vdc Forward Gate Current I GF madc Total Device Dissipation @ Derate above = 25 C P D 35 2.8 mw mw/ C Junction Temperature Range T J 65 to +125 C Storage Temperature Range T stg 65 to +15 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 3 GATE 1 2 3 1 DRAIN 2 SOURCE TO92 CASE 2911 STYLE 5 MARKING DIAGRAM J3xx AYWW J3xx = Device Code xx = 9 or A = Assembly Location Y = Year WW = Work Week = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 26 March, 26 Rev. 1 1 Publication Order Number: J39/D
J39, ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate Source Breakdown Voltage (I G = 1. Adc, V DS = ) V (BR)GSS 25 Vdc Gate Reverse Current (V GS = 15 Vdc, V DS =, ) (V GS = 15 Vdc, V DS =, T A = +125 C) Gate Source Cutoff Voltage (dc, I D = 1. nadc) J39 ON CHARACTERISTICS ZeroGate Voltage Drain Current (1) (dc, V GS = ) J39 GateSource Forward Voltage (V DS =, I G = 1. madc) I GSS V GS(off) 1. 2. I DSS 12 24 1. 1. 4. 6.5 3 6 nadc Adc Vdc madc V GS(f) 1. Vdc SMALLSIGNAL CHARACTERISTICS CommonSource Input Conductance (dc, I D = madc, f = MHz) J39 CommonSource Output Conductance (dc, I D = madc, f = MHz) CommonGate Power Gain (dc, I D = madc, f = MHz) CommonSource Forward Transconductance (dc, I D = madc, f = MHz) CommonGate Input Conductance (dc, I D = madc, f = MHz) CommonSource Forward Transconductance (dc, I D = madc, f = 1. khz) J39 CommonSource Output Conductance (dc, I D = madc, f = 1. khz) CommonGate Forward Transconductance (dc, I D = madc, f = 1. khz) J39 CommonGate Output Conductance (dc, I D = madc, f = 1. khz) J39 GateDrain Capacitance (V DS =, V GS = Vdc, f = 1. MHz) GateSource Capacitance (V DS =, V GS = Vdc, f = 1. MHz) Re(y is ).7.5 mmhos Re(y os ).25 mmhos G pg 16 db Re(y fs ) 12 mmhos Re(y ig ) 12 mmhos g fs 8 2 18 mhos g os 25 mhos g fg g og 13 12 15 mhos mhos C gd 1.8 2.5 pf C gs 4.3 5. pf FUNCTIONAL CHARACTERISTICS Equivalent ShortCircuit Input Noise Voltage (dc, I D = madc, f = Hz) 1. Pulse Test: Pulse Width 3 s, Duty Cycle 3.%. e n nv Hz 2
J39, ORDERING INFORMATION J39 J39G Device Package Shipping TO92 TO92 (PbFree) Units / Bulk G RLRP RLRPG TO92 TO92 (PbFree) TO92 TO92 (PbFree) Units / Bulk 2 Units / Tape & Ammo Box ZL1 ZL1G TO92 TO92 (PbFree) 2 Units / Tape & Ammo Box For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. I D, DRAIN CURRENT (ma) 7 6 5 4 3 2 I DSS T A = 55 C 55 C +15 C +15 C 5. 4. 3. 2. 1. I D V GS, GATESOURCE VOLTAGE (VOLTS) I DSS V GS, GATESOURCE CUTOFF VOLTAGE (VOLTS) 7 6 5 4 3 2, SATURATION DRAIN CURRENT (ma) I DSS, FORWARD TRANSCONDUCTANCE (mmhos) 35 3 25 2 15 5. f = 1. MHz T A = 55 C +15 C 55 C 5. 4. 3. 2. 1. V GS, GATESOURCE VOLTAGE (VOLTS) +15 C Figure 1. Drain Current and Transfer Characteristics versus GateSource Voltage Figure 2. Forward Transconductance versus GateSource Voltage 3
J39,, FORWARD TRANSCONDUCTANCE ( mhos) μ k k 1. k Y os V GS(off) = 2.3 V = V GS(off) = 5.7 V = 1..1.1.2.3.5 1. 2. 3. 5. 2 3 5 I D, DRAIN CURRENT (ma) 1. k, OUTPUT ADMITTANCE ( mhos) Y os μ CAPACITANCE (pf) 7. 4. 1. 9. R DS C gs C gd 8. 7. 6. 5. 4. 3. 2. 1. V GS, GATE SOURCE VOLTAGE (VOLTS) 12 96 72 48 24 R DS, ON RESISTANCE (OHMS) Figure 3. CommonSource Output Admittance and Forward Transconductance versus Drain Current 3 3. S 21, S 11.85.45 Figure 4. On Resistance and Junction Capacitance versus GateSource Voltage S 12, S 22.6 1. Y 11, Y 21, Y 22 (mmhos) 24 18 12 6. I D = ma Y 11 Y 21 Y 22 2.4 1.8 1.2.6 Y 12 (mmhos).79.73.67.61.39.33.27.21 I D = ma S 21 S 11 S 22.48.36.24.12.98.96.94.92 Y 12 2 3 5 7.55 S 12.15 2 3 5 7.9 Figure 5. CommonGate Y Parameter Magnitude versus Frequency Figure 6. CommonGate S Parameter Magnitude versus Frequency 21, 11 18 5 22 12, 22 2 87 2 11, 12 2 12 11 21, 22 17 4 21 4 6 86 4 21 22 2 16 3 8 85 6 8 4 15 14 13 12 2 11 I D = ma 2 3 5 7 12 14 16 18 2 84 83 82 8 12 6 21 12 4 11 I D = ma 2 2 3 5 7 6 8 Figure 7. CommonGate Y Parameter PhaseAngle versus Frequency Figure 8. S Parameter PhaseAngle versus Frequency 4
J39, PACKAGE DIMENSIONS TO92 (TO226) CASE 2911 ISSUE AL SEATING PLANE R A X X H V 1 N G P N B L K C D J SECTION XX NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.175.25 4.45 5.2 B.17.2 4.32 5.33 C.125.165 3.18 4.19 D.16.21.47.533 G.45.55 1.15 1.39 H.95.5 2.42 2.66 J.15.2.39.5 K.5 12.7 L.25 6.35 N.8.5 2.4 2.66 P. 2.54 R.115 2.93 V.135 3.43 STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85821312 USA Phone: 4882977 or 8344386 Toll Free USA/Canada Fax: 48829779 or 83443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 291 Kamimeguro, Meguroku, Tokyo, Japan 15351 Phone: 8135773385 5 ON Semiconductor Website: Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. J39/D
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