BUH1015 BUH1015HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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BUH1015 BUH1015HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS DESCRIPTION The BUH1015 and BUH1015HI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. TO-218 1 2 3 ISOWATT218 1 2 3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 1500 V VCEO Collector-Emitter Voltage (IB = 0) 700 V V EBO Emitter-Base Voltage (I C =0) 10 V IC Collector Current 14 A ICM Collector Peak Current (tp <5ms) 18 A IB Base Current 8 A I BM Base Peak Current (t p <5ms) 11 A Ptot Total Dissipation at Tc =25 o C 160 70 W T stg Storage Temperature -65 to 150 Tj Max. Operating Junction Temperature 150 o C o C December 1999 1/8

THERMAL DATA TO-218 ISOWATT218 Rthj-case Thermal Resistance Junction-case Max 0.78 1.8 o C/W ELECTRICAL CHARACTERISTICS (T case =25 o C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CES IEBO V CEO(sus ) VEBO V CE(sat) Collector Cut-off Current (V BE =0) Emitter Cut-off Current (IC =0) Collector-Emitter Sustaining Voltage (I B =0) Emitter-Base Voltage (IC =0) Collector-Emitter Saturation Voltage V CE =1500V V CE =1500V T j = 125 o C VEB =5V 100 µa I C = 100 ma 700 V IE=10mA 10 V I C =10A I B =2A 1.5 V V BE(sat) Base-Emitter Saturation Voltage hfe DC Current Gain IC =10A VCE =5V I C =10A V CE =5V T j =100 o C t s t f ts tf RESISTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time I C =10A I B =2A 1.5 V V CC =400V I C =10A I B1 =2A I B2 =-6A 1.5 110 IC = 10 A f = 31250 Hz IB1 =2A IB2 =-6A V ceflyback = 1200 sin π 5 106 t V INDUCTIVE LOAD I C =6A f=64khz ts tf Storage Time Fall Time IB1 =1A Vbeoff =-2V V ceflyback = 1100 sin π 5 106 t V Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 7 5 0.2 2 10 14 4 220 3.7 200 ma ma µs ns µs ns µs ns Safe Operating Area For TO-218 Safe Operating Area For ISOWATT218 2/8

Thermal Impedance for TO-218 Thermal Impedance for ISOWATT218 Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/8

Power Losses at 64 KHz Switching Time Inductive Load at 64KHz (see figure 2) Reverse Biased SOA BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current IB1 has to be provided for the lowest gain hfe at T j = 100 o C (line scan phase). On the other hand, negative base current I B2 must be provided the transistor to turn off (retrace phase). Most of the dissipation, especially in the deflection application, occurs at switch-off so it is essential to determine the value of I B2 which minimizes power losses, fall time t f and, consequently, T j.a new set of curves have been defined to give total power losses, ts and tf as a function of IB1 at 64 KHz scanning frequencies for choosing the optimum drive. The test circuit is illustrated in figure 1. The values of L and C are calculated from the following equations: 1 2 L (I C) 2 = 1 2 C (V CEfly) 2 1 ω=2πf= L C Where I C = operating collector current, V CEfly = flyback voltage, f= frequency of oscillation during retrace. 4/8

Figure 1: Inductive Load Switching Test Circuits. Figure 2: Switching Waveforms in a Deflection Circuit 5/8

TO-218 (SOT-93) MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 4.7 4.9 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.5 0.098 E 0.5 0.78 0.019 0.030 F 1.1 1.3 0.043 0.051 G 10.8 11.1 0.425 0.437 H 14.7 15.2 0.578 0.598 L2 16.2 0.637 L3 18 0.708 L5 3.95 4.15 0.155 0.163 L6 31 1.220 R 12.2 0.480 Ø 4 4.1 0.157 0.161 F H G C D A E L5 L6 L3 L2 R 1 2 3 P025A 6/8

ISOWATT218 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 5.35 5.65 0.211 0.222 C 3.30 3.80 0.130 0.150 D 2.90 3.10 0.114 0.122 D1 1.88 2.08 0.074 0.082 E 0.75 0.95 0.030 0.037 F 1.05 1.25 0.041 0.049 F2 1.50 1.70 0.059 0.067 F3 1.90 2.10 0.075 0.083 G 10.80 11.20 0.425 0.441 H 15.80 16.20 0.622 0.638 L 9 0.354 L1 20.80 21.20 0.819 0.835 L2 19.10 19.90 0.752 0.783 L3 22.80 23.60 0.898 0.929 L4 40.50 42.50 1.594 1.673 L5 4.85 5.25 0.191 0.207 L6 20.25 20.75 0.797 0.817 N 2.1 2.3 0.083 0.091 R 4.6 0.181 DIA 3.5 3.7 0.138 0.146 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm P025C/A 7/8

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 8/8 http://www.st.com.