UNION OPTRONICS CORP.

Similar documents
UNION OPTRONICS CORP.

U-LD-85E061Ap Features 1. Peak wavelength at 25 o C : 850 nm (typical) 2. Standard light output : 500mW (CW)

U-LD-80B051A-C Features 1. Peak wavelength at 25 o C:808 nm (typical) 2. Standard light output:200mw (CW)

U-LD Ap/62Ap Features 1. Peak wavelength at 25 o C:830 nm (typical) 2. Standard light output : 50mW (CW) 3. Type:

UNION OPTRONICS CORP.

UNION OPTRONICS CORP.

UNION OPTRONICS CORP.

U-LD83C061A-Ep Features 1. Peak wavelength at 25 o C:830 nm (typical) 2. Standard light output:300mw (CW)

UNION OPTRONICS CORP.

U-LD-98C041Ap Features 1. Peak wavelength at 25 o C:980 nm (typical) 2. Standard light output:300mw (CW)

UNION OPTRONICS CORP.

UNION OPTRONICS CORP.

U-LD A Features 1. Peak wavelength at 25 o C:635 nm (typical) 2. Standard light output:5mw (CW)

U-LD-98B043Ap Features 1. Peak wavelength at 25 o C:980 nm (typical) 2. Standard light output:200mw (CW)

U-SMD-65xx SERIES 5630 LASER DIODE

635nm Red Laser Diode. U-LD A-preliminary. U-LD A-preliminary

808nm IR Laser Diode. U-LD-80E041A-preliminary 友嘉科技股份有限公司桃園縣楊梅鎮 3 鄰高獅路 156 號. U-LD-80E041A-preliminary

650nm Laser Diode for DVD U-LD B

670nm Red Laser Diode. U-LD A-preliminary 友嘉科技股份有限公司桃園縣楊梅鎮 3 鄰高獅路 156 號. U-LD A-preliminary

HL6535MG. Visible High Power Laser Diode for Recordable-DVD

HL6714G. AlGaInP Laser Diode ODE C (Z) Rev.3 Jan Description. Features

HL8325G. GaAlAs Laser Diode

LNCT22PK01WW. Description. Package. Feature. Pin assignment. Application Optical disk drive Sensing Industrial use. Absolute Maximum Ratings 3)

GH04020B2A. Blue violet Laser Diode. Low Power Blue violet Laser Diode. Under development New product. Outline Dimensions.

Package Type HL6362MG/63MG: MG

Operating voltage Vop V Wavelength λ nm

LD Item Symbol Value Unit Condition 100 mw CW Output power

HL6323MG. AlGaInP Laser Diode

HL6312G/13G. AlGaInP Laser Diodes

GH04125A2A. Blue violet Laser Diode. High Power Blue violet Laser Diode. Under development New product. Outline Dimensions.

Item Symbol Min. Typ. Max. Unit Condition. Threshold current Ith ma. Operating current Iop ma

HL6312G/13G. AlGaInP Laser Diodes

HL6335G/36G. Circular Beam Low Operating Current. Description. Features. Absolute Maximum Ratings. Optical and Electrical Characteristics

LNCQ28PS01WW. Description. Package. Features. Pin assignment. Applications. Absolute Maximum Ratings. Electrical and Optical Characteristics

2014 USHIO OPTO SEMICONDUCTORS, INC. UOS-GC001

Laser diode. CW (Continuous Wave) drive At the position of 1.6mm or more from the lead base (3s)

Operating voltage Vop V Wavelength λ nm

Operating voltage Vop V Wavelength λ nm

L Epoxy Lens Type Infrared Illuminator

VCSEL SENSOR FLAT WINDOW TO CAN

SPECIFICATIONS. Laser Diode GH0832BA1K

850nm Multi-Mode VCSEL

DL Blue Laser Diode in TO38 ICut Package. PRELIMINARY Datasheet. Creative Technology Lasers (925) Tele.

Opto Devices Laser Diodes

SMT880 High Performance Infrared TOP IR LED

940nm Single-Mode VCSEL Part number code: 940S-0000-X001

High Power Multimode Laser Diodes 6W Output Power in CW Operation with Wavelengths from 1470nm to 1550nm

Blue Laser Diode in TO38 ICut Package, 80mW CW DL PRELIMINARY

680nm Quasi Single-Mode VCSEL Part number code: 680Q-0000-X002

SMT430R High Performance TOP LED

NEC's 1310 nm InGaAsP MQW-DFB LASER DIODE IN COAXIAL PACKAGE FOR FIBER OPTIC COMMUNICATIONS

940nm Single-Mode VCSEL Part number code: 940S-0000-X001

Green Laser Diode in TO56 Package Version 0.2 PLT5 520B. ATTENTION Observe Precautions For Handling Electrostatic Sensitive Device

CALY LC nm 10 Gbps DFB LC TOSA with Flex

EDC High Power Top LED

830nm single mode diode laser

Diode Lasers, Single- Mode 50 to 200 mw, 830/852 nm. 54xx Series

F6 Series Diode Lasers 6-Pin Fiber-Coupled Single-Stripe CW Devices

SMT47W/850D High Performance Bi-Color TOP LED

IRR60-48C/TR8. Description. Applications Sensor Oximeter. Device Selection Guide Device No. Chip Material Lens Color IRR60-48C/TR8

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE

SMD BT/BDGAR6S1-L40/10T

NEC's 1550 nm InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE for 622 Mb/s APPLICATION

Green Laser Diode in TO38 ICut Package Version 1.1 PL 520. ATTENTION Observe Precautions For Handling Electrostatic Sensitive Device

2.5GBPS 850NM VCSEL LC TOSA PACKAGE

EDC800D-1100-S5. Data Sheet. 800nm High Power TOP LED. Outline and Internal Circuit PRELIMINARY. (Unit : mm)

SMD REFLECTOR /RSGHB2W-S01/2D/MS

Technical Data Sheet 0603 Package Chip LED (0.6mm Height)

EDC S5. Data Sheet. 1050nm High Power TOP LED. Outline and Internal Circuit. (Unit : mm)

850NM SINGLE MODE VCSEL TO-46 PACKAGE

SMBB850D AnodeMark heatsink

NV4V31SF. Data Sheet R08DS0070EJ0100 Rev Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source DESCRIPTION FEATURES APPLICATIONS

SMD B/BDR6GAS1-R40/10T

SMD REFLECTOR 67-03A/R6GHBHW-A01/2T/MS

895nm Single-Mode VCSEL

Green Laser Diode in TO38 ICut Package Version 0.2

SMBB850DS Data Sheet. 850nm High Power TOP LED. Outline and Internal Circuit. (Unit : mm)

SMT660N/805/ High Performance Multi-Color TOP LED

L6990/750/800/850-40B59 Multi-Wavelength LED

High Powered 860nm VCSELs HVS

Technical Data Sheet 0603 Package Chip LED (0.4mm Height)

EVERLIGHT ELECTRONICS CO.,LTD.

Technical Data Sheet 0603 Package Infrared Chip LED SIR19-315/TR8

SMT430R. Data Sheet. 430nm High Performance TOP LED. Outline and Internal Circuit PRELIMINARY. (Unit : mm)

Opto-Device & Custom LED 5 STEM TYPE LED LAMP L660N-30K42N

10G GPON ONU BOSA(10G1270nmTX 10G1577nmRX) Features: Applications: Absolute Maximum Ratings: Electrical and Optical Characteristics Transmitter:

1.8mm Round Subminiature Infrared LED IR42-21C/TR8

EVERLIGHT ELECTRONICS CO., LTD.

EVERLIGHT ELECTRONICS CO.,LTD.

Opto-Device & Custom LED 5 Stem Type LED LAMP L M32

Technical Data Sheet Chip LED with Right Angle Lens

SPL PL90_3. Nanostack Pulsed Laser Diode in Plastic Package 75 W Peak Power Version 1.5

High Power Pulsed Laser Diodes 850-Series

The OPV300 / OPV310 have a flat lens while the OPV314 has a microbead lens. Refer to mechanical drawings for details.

A laser diode is mounted into a coaxial package integrated with a singe-mode fiber-stub, an isolator and an InGaAs monitor PD.

Technical Data Sheet Top View LEDs

EVERLIGHT ELECTRONICS CO.,LTD.

EVERLIGHT ELECTRONICS CO.,LTD.

10G GPON ONU BOSA(2.5G1270nmTX 10G1577nmRX) Features: Applications: Absolute Maximum Ratings: Coaxial Package. InGaAsP/InP MQW-DFB Laser Diode

EVERLIGHT ELECTRONICS CO.,LTD.

Transcription:

Features 1. Peak wavelength at 25 o C : 808 nm (typical) 2. Standard light output : 300mW (CW) 3. Package Type : TO-18 (ψ5.6mm) Pb free flat window cap with glass, no monitor PD. 4. Low operation current 5. Low divergence angle 6. High reliability Applications 1. Motion sensor 2. Medical application 3. Pumping source for solid state laser 4. Infrared illumination 5. Industrial application External dimensions(unit : mm) No.156, Gaoshih Rd., Yangmei Township, Taoyuan County 326, Taiwan (R.O.C.) TEL: 886-3-485-2687 FAX : 886-3-475-4378 E-mail: sales@uocnet.com Website:http://www.uocnet.com 1 / 5

Absolute Maximum Ratings(Tc=25 ) Parameter Symbol Rating Unit Optical Output Po 400 mw Reverse Voltage Vr 2 V Operating Temperature(Case) Top -10~+50 Storage Temperature Tstg -10~+85 Electrical and Optical Characteristics(Tc=25 ) Parameter Symbol Condition Min. Typ. Max. Unit Threshold Current Ith Po=300mW - 50 100 ma Operating Current Iop Po=300mW - 330 355 ma Operating Voltage Vop Po=300mW - 1.84 2.0 Volts Slope Efficiency η 225mW-75mW I 225 mw-i 75 mw - 1.0 - mw/ma Beam Divergence Parallel θ// Po=300mW - 7.5 - deg. (FWHM) Perpendicular θ Po=300mW - 30 - deg. Lasing Wavelength* λ Po=300mW 800 808 816 nm θ// and θ are defined as the angle within which the intensity is 50% of the peak value. Quality Notice This device is still under product development. Typical characteristic curves Optical Output Power (mw) 450 400 350 300 250 200 150 100 50 0 Optical Output Power v.s. Forward Current 25 o C 30 o C 40 o C 50 o C 25 50 75 100 125 150 175 200 225 250 275 300 325 350 375 400 425 450 475 Forward Current (ma) 2 / 5

Forward Voltage (V) 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 Forward Voltage v.s. Forward Current 25 o C 30 o C 40 o C 50 o C 0 50 100 150 200 250 300 350 400 450 500 Forward Current (ma) Peak Wavelength (nm) 820 815 810 805 800 Peak Wavelength v.s. Case Temperature Relative Intensity 1.0 0.8 0.6 0.4 0.2 Po=300mW Tc=25 o C Far-Field Pattern Perpendicular Parallel 0.0-60 -50-40 -30-20 -10 0 10 20 30 40 50 60 Angle (degree) 3 / 5

Slope Efficiency (mw/ma) 1.6 1.4 1.2 1.0 0.8 0.6 Slope Efficiency v.s. Case Temperature Threshold Current (ma) 100 10 Threshold Current v.s. Case Temperature Precautions QUALITY ASSURANCE After any processing of laser chip or laser diode TO-CAN (LD) by the customer, the performance, yield and reliability of the product, in which the chip or LD is applied, are subject to change due to customer s handling, assembly, testing, and processing. Because laser chip and LD are strongly affected by environmental conditions, physical stress, and chemical stresses imposed by customer that are not in Union Optronics Corp. (UOC) control and hence no guarantee on the characteristics and the reliability at all after the shipment. Also, UOC does not have any responsibility for field failures in a customer product. When attaching a heat sink to laser chip or LD, be careful not to apply excessive force to the device in the process. 4 / 5

SAFETY PRECAUTIONS Although Union Optronics Corp. (UOC) keeps improving quality and reliability of its laser chip and laser diode TO-CAN (LD), semiconductor devices in general can malfunction or fail due to their intrinsic characteristics. Hence, it is required that the customer s products are designed with full regard to safety by incorporating the redundancy, fire prevention, error prevention so that any problems or error with UOC laser chip or LD does not cause any accidents resulting in injury, death, fire, property damage, economic damage, or environmental damage. In case customer wants to use UOC laser chip or LD in the systems requiring high safety, customer is requested to confirm safety of entire systems with customer s own testing. SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. The information provided by Union Optronics Corp. (UOC), including but not limited to technical specifications, recommendations, and application notes relating to laser chip or laser diode TO-CAN (LD) is believed to be reliable and accurate and is subject to change without notice. UOC reserves the right to change its assembly, test, design, form, specification, control, or function without notice. 5 / 5