VS-HF06TB20-M3 HEXFRED, Ultrafast Soft Recovery Diode, 6 2 FETURES Ultrafast and ultrasoft recovery 3 2L TO-220C Very low I RRM and Q rr Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 Base cathode 2 3 Cathode node BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count PRIMRY CHRCTERISTICS I F(V) 6 V R 200 V V F at I F 3.0 V t rr typ. 26 ns T J max. 50 C Package 2L TO-220C Circuit configuration Single DESCRIPTION VS-HF06TB20 is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 200 V and 6 continuous current, the VS-HF06TB20 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED product line features extremely low values of peak recovery current (I RRM ) and does not exhibit any tendency to snap-off during the t b portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HF06TB20 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Cathode to anode voltage V R 200 V Maximum continuous forward current I F T C = 0 C 6 Single pulse forward current I FSM 80 Maximum repetitive forward current I FRM 24 T C = 25 C 62.5 Maximum power dissipation P D T C = 0 C 25 W Operating junction and storage temperature range T J, T Stg -55 to +50 C Revision: 23-Nov-7 Document Number: 9688 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEuropa@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
VS-HF06TB20-M3 ELECTRICL SPECIFICTIONS ( unless otherwise specified) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Cathode to anode breakdown voltage V BR I R = 0 μ 200 - - Maximum forward voltage V FM I F = 2-3.5 3.9 I F = 6.0-2.7 3.0 V I F = 6.0, - 2.4 2.8 Maximum reverse V R = V R rated - 0.26 5.0 I leakage current RM, V R = 0.8 x V R rated - 500 μ Junction capacitance C T - 9.0 4 pf Series inductance L S Measured lead to lead 5 mm from package body - 8.0 - nh DYNMIC RECOVERY CHRCTERISTICS ( unless otherwise specified) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS t rr I F =.0, di F /dt = 200 /μs, V R = 30 V - 26 - Reverse recovery time t rr - 53 80 ns t rr2-87 30 I RRM - 4.4 8.0 Peak recovery current I F = 6.0 I RRM2-5.0 9.0 di F /dt = 200 /μs Q rr Reverse recovery charge - 6 320 nc Q rr2-233 585 Peak rate of recovery current di (rec)m /dt - 80 - during t b di (rec)m /dt2-0 - /μs THERML - MECHNICL SPECIFICTIONS PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Lead temperature T lead 0.063" from case (.6 mm) for s - - 300 C Thermal resistance, junction to case R thjc - - 2.0 Thermal resistance, junction to ambient R thj Typical socket mount - - 80 K/W Thermal resistance, case to heatsink R thcs Mounting surface, flat, smooth, and greased - 0.5 - Weight Mounting torque - 2.0 - g - 0.07 - oz. Marking device Case style 2L TO-220C HF06TB20 6.0 (5.0) - 2 () kgf cm (lbf in) Revision: 23-Nov-7 2 Document Number: 9688 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEuropa@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
VS-HF06TB20-M3 I F - Instantaneous Forward Current () 0 T J = 50 C 0. 0 2 3 4 5 6 I R - Reverse Current (µ) 00 0 0. T J = 50 C T J = 0 C 0.0 0 200 400 600 800 00 200 400 V F - Forward Voltage Drop (V) V R - Reverse Voltage (V) Fig. - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Reverse Current vs. Reverse Voltage 0 C T - Junction Capacitance (pf) 0 00 V R - Reverse Voltage (V) 000 Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Response 0. Single pulse (thermal resistance) D = 0.50 D = 0.20 D = 0. D = 0.05 D = 0.02 D = 0.0 0.0 0.0000 0.000 0.00 0.0 0. t - Rectangular Pulse Duration (s) P DM Notes:. Duty factor D = t /t 2 2. Peak T J = P DM x Z thjc + T C t t 2 0 Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics Revision: 23-Nov-7 3 Document Number: 9688 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEuropa@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
VS-HF06TB20-M3 t rr (ns) 0 90 80 70 60 50 I F = 6 I F = 4 Q rr (nc) 00 800 600 400 I F = 6 I F = 4 40 30 20 0 00 di F /dt (/µs) Fig. 5 - Typical Reverse Recovery Time vs. di F /dt 200 0 0 00 di F /dt (/µs) Fig. 7 - Typical Stored Charge vs. di F /dt 25 20 000 I F = 6 I F = 4 I rr () 5 I F = 6 I F = 4 di (rec)m /dt (/µs) 00 0 5 0 0 00 di F /dt (/µs) Fig. 6 - Typical Recovery Current vs. di F /dt 0 00 di F /dt (/µs) Fig. 8 - Typical di (rec)m /dt vs. di F /dt (3) t rr 0 I F t a tb (2) I RRM (4) Q rr 0.5 I RRM di (rec)m /dt (5) 0.75 I RRM () di F /dt () di F /dt - rate of change of current through zero crossing (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. (4) Q rr - area under curve defined by t rr and I RRM t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 23-Nov-7 4 Document Number: 9688 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEuropa@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
VS-HF06TB20-M3 ORDERING INFORMTION TBLE Device code VS- HF 06 TB 20 -M3 2 3 4 5 6 7 - product 2 - HEXFRED family 3 - Electron irradiated 4 - Current rating (06 = 6 ) 45 - Package: 4 TB = 2L TO-220C 6 7 - - Voltage rating (20 = 200 V) Environmental digit: -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PCKGING DESCRIPTION VS-HF06TB20-M3 50 00 ntistatic plastic tube Dimensions Part marking information LINKS TO RELTED DOCUMENTS www.vishay.com/doc?9656 www.vishay.com/doc?9539 Revision: 23-Nov-7 5 Document Number: 9688 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEuropa@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
DIMENSIONS in millimeters and inches 2L TO-220C Outline Dimensions Q (6) E Ø P 0.04 M B M (6) H (7) B (H) (E) Thermal pad 2 D C C D L (2) (6) D c D2 (6) D 2 x b 2 x b2 Detail B 2 Detail B L C E (6) Base metal (b, b2) Plating 0.05 M B M 2 x e e View - c c (4) (4) b, b3 Section C - C and D - D Lead tip Conforms to JEDEC outline TO-220C SYMBOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.25 4.65 0.67 0.83 D2.68 2.88 0.460 0.507 6.4.40 0.045 0.055 E..5 0.398 0.44 3, 6 2 2.50 2.92 0.098 0.5 E 6.86 8.89 0.270 0.350 6 b 0.69.0 0.027 0.040 e 2.4 2.67 0.095 0.5 b 0.38 0.97 0.05 0.038 4 e 4.88 5.28 0.92 0.208 b2.20.73 0.047 0.068 H 6.09 6.48 0.240 0.255 6, 7 b3.4.73 0.045 0.068 4 L 3.52 4.02 0.532 0.552 c 0.36 0.6 0.04 0.024 L 3.32 3.82 0.3 0.50 2 c 0.36 0.56 0.04 0.022 4 Ø P 3.54 3.9 0.39 0.54 D 4.85 5.35 0.585 0.604 3 Q 2.60 3.00 0.2 0.8 D 8.38 9.02 0.330 0.355 Notes () Dimensioning and tolerancing as per SME Y4.5M-994 (2) Lead dimension and finish uncontrolled in L (3) Dimension D, D, and E do not include mold flash. Mold flash shall not exceed 0.27 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b, b3, and c apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H, D2, and E (7) Outline conforms to JEDEC TO-220, except D2 (minimum) Revision: 06-Dec-7 Document Number: 9656 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
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