High Directivity Monolithic Amplifier 50Ω 0.5 to 2.5 GHz The Big Deal Integrated matching, DC Blocks and bias circuits Excellent Active Directivity Operates over 2.8-5V CASE STYLE: DQ849 Product Overview is a wideband PHEMT based MMIC amplifier with high active Directivity. MNA integrates the entire matching network and majority of the bias circuit inside the package, reducing the need for complicated external circuits. This approach makes the MNA amplifier extremely straightforward to use. This design operates on a single 2.8 to 5V supply, is well matched for 50Ω and comes in a tiny, low profile 3x3mm 8-lead MCLP package accommodating dense circuit board layouts. Key Features Feature Excellent Active Directivity (Isolation- Gain) 21-36 db Integrates DC blocks and RF choke Advantages Ideal for use as a buffer amplifier minimizing interaction of adjacent circuits Minimizes external components, component count and circuit area. Single +2.8 to +5V operation 3 x 3mm 8-lead MCLP package Amplifier can be used at low voltage such as +3V or standard +5V. +5V operation results in higher P1dB and OIP3. Tiny footprint saves space in dense layouts while providing low inductance, repeatable transitions, and excellent thermal contact to the PCB. Page 1 of 5
High Directivity Monolithic Amplifier Product Features Choice of supply voltage, +2.8V to +5V Micro-miniature size.120 X.120 Internal DC blocking at RF input and output High directivity, +22 db typ. at 2 GHz and 5V Output power, +17.9 dbm typ. at 2 GHz and 5V Aqueous washable Typical Applications Buffer amplifier Cellular infrastructure Communications satellite Defense 0.5-2.5 GHz CASE STYLE: DQ849 +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications General Description is a wideband PHEMT based MMIC amplifier with high active Directivity. MNA integrates the entire matching network and majority of the bias circuit inside the package, reducing the need for complicated external circuits. This approach makes the MNA amplifier extremely straightforward to use. This design operates on a single +2.8 to +5V supply, is well matched for 50Ω and comes in a tiny, low profile 3x3mm 8-lead MCLP package accommodating dense circuit board layouts. simplified schematic and pad description Function Pad Number RF IN 2 RF input pin RF-OUT 5 RF output pin Description (See Fig 1) DC 7,8 DC Bias pads 7,8. Pad 7 connected to ground via 1000 pf. Pad 8 connected to pad 7 via 33 ohms. NC 1,3,4,6 Not Connected, connect pad 3 and 4 to ground externally GND Paddle Ground OPTIONAL 1,6 No internal connection; recommended use: per PCB Layout PL-078 REV. OR M152175 151203 Page 2 of 5
Electrical Specifications 1 at 25 C Parameter Condition (GHz) Vs=5V Vs=2.8V Min. Typ. Max. Typ. Units Frequency Range 0.5 2.5 0.5-2.5 GHz Gain 0.5 14.1 12.4 db 0.75 14.8 12.9 1.0 15.0 13.0 1.5 15.2 13.0 2.0 13.5 15.0 16.5 12.6 2.5 14.7 12.3 Input Return Loss 0.5 8 8 db 0.75 13 13 1.0 16 17 1.5 20 23 2.0 19 22 2.5 17 19 Output Return Loss 0.5 14 13 db 0.75 21 17 1.0 21 18 1.5 18 18 2.0 15 18 2.5 14 17 Output Power at P1dB 0.5 19.2 10.3 dbm 0.75 19.3 11.1 1.0 19.1 11.4 1.5 18.6 11.5 2.0 17.9 11.8 2.5 17.5 11.8 Output IP3 0.5 32 22 dbm 0.75 32 23 1.0 31 23 1.5 31 23 2.0 29 23 2.5 29 23 Noise Figure (db) 0.5 5.6 5.8 db 0.75 5.5 5.6 1.0 5.3 5.4 1.5 5.4 5.5 2.0 5.3 5.5 2.5 5.4 5.6 Directivity 0.5 33 36 db (Isolation-Gain) 0.75 33 32 1.0 29 28 1.5 24 24 2.0 22 22 2.5 21 21 DC Current 84 104 79 ma Device Current Variation vs. Temperature (2) 32 15 μa/ C Device Current Variation vs Voltage 0.001 3 0.003 4 ma/mv Thermal resistance at 85 C (Junction to Lead) 54 54 C/W (1) Measured on Mini-Circuits Characterization test board TB-186+. See Characterization Test Circuit (Fig. 1) (2) (Current at 85 C -Current at -45 C)/130 (3) (Current at 5.25V-Current at 3.9V)/1.35 (4) (Current at 3.9V-Current at 2.66V)/1.24 Absolute Maximum Ratings 5 Parameter Ratings Operating Temperature -40 C to 85 C Storage Temperature -55 C to 100 C DC Voltage 7 V at pin 7 (on TB-186+) 1V at pins 2 & 5 Power Dissipation 800 mw Input Power +11 dbm at Vs=+2.8V and +16 dbm at+5v (continuous operation) +23 dbm (5 minutes max) 5. Permanent damage may occur if any of these limits are exceeded. These ratings are not intended for continuous normal operation. Page 3 of 5
- Characterization & Application Test Circuit Fig 1. Block Diagram of Test Circuit used for characterization. (DUT soldered on Mini-Circuits Characterization test board TB-186+) Gain, Return loss, Output power at 1dB compression (P1 db), output IP3 (OIP3) and noise figure measured using Agilent s N5242A PNA-X microwave network analyzer. Conditions: 1. Gain and Return loss: Pin= -25dBm 2. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dbm/tone at output. Recommended Application Circuit Fig 2. Test Board includes case, connectors, and components soldered to PCB Product Marking MCL MN2A Marking may contain other features or characters for internal lot control Page 4 of 5
Additional Detailed Technical Information additional information is available on our dash board. To access this information click here Data Table Performance Data Swept Graphs S-Parameter (S2P Files) Data Set (.zip file) Case Style Tape & Reel Standard quantities available on reel Suggested Layout for PCB Design Evaluation Board Environmental Ratings DQ849 3x3x0.9 mm MCLP Plastic package, exposed paddle lead finish: tin-silver over nickel F104 7 reels with 20, 50, 100, 200, 500, 1K, or 2K devices PL-078 TB-186-2A+ ENV08T1 ESD Rating Human Body Model (HBM): Class 1A (250 to <500V) in accordance with ANSI/ESD STM 5.1-2001 Machine Model (MM): Class M1 (Pass 50V) in accordance with ANSI/ESD STM5.2-1999 MSL Rating Moisture Sensitivity: MSL1 in accordance with IPC/JEDEC J-STD-020D Start Visual Inspection Electrical Test SAM Analysis Reflow 3 cycles, 260 C Soak 85 C/85RH 168 hours Bake at 125 C, 24 hours Visual Inspection Electrical Test SAM Analysis Finish Additional Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, Standard Terms ); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits website at www.minicircuits.com/mclstore/terms.jsp Page 5 of 5