GT45F3 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT45F3 For PDP-TV Applications Unit: mm 5th generation (trench gate structure) IGBT Enhancement-mode Low input capacitance: Cies = 7pF (typ.) Peak collector current: I CP = A (max) TO-SIS package Absolute Maximum Ratings (Ta = 5 C) Characteristics Symbol Rating Unit Collector-emitter voltage V CES 3 V Gate-emitter voltage V GES ± 3 V Collector current Collector power dissipation Pulse (Note ) I CP A Tc=5 C P C 6 Ta=5 C Junction temperature T j 5 C Storage temperature range T stg 55 to 5 C JEDEC - JEITA - Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA Weight: g (typ.) -UC operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions / Derating Concept and Methods ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics W. Gate. Collector 3. Emitter Characteristics Symbol Rating Unit Thermal resistance, junction to case (Tc = 5 C) Thermal resistance, junction to ambient (Ta = 5 C) R th (j-c) 4.8 C/W R th (j-a) 6.5 C/W Marking 45F3 Part No. (or abbreviation code) Lot code Note : I CP maximum rating(a) is limited by pulse width (3 μs ). 7-9-3
GT45F3 Electrical Characteristics (Ta = 5 C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GES V GE = ± 3 V, V CE = V ± na Collector cut-off current I CES V CE = 3 V, V GE = V.5 ma Emitter-collector voltage V ECS I E =.5A, V GE = V (Note) 5 V Gate-emitter cut-off voltage V GE (OFF) I C = ma, V CE = 5 V 3. 4.5 5.5 V Collector-emitter saturation voltage V CE (sat) () I C = 45 A, V GE = 5 V.35.6 V Collector-emitter saturation voltage V CE (sat) () I C = A, V GE = 5 V.95.4 V Collector-emitter saturation voltage V CE (sat) (3) I C = A, V GE = 5 V.6 3.3 V Input capacitance C ies 7 Reverse transfer capacitance C res V CE = V, V GE = V, f = MHz 55 pf Output capacitance C oes 5 Switching time (Resistance load) Rise time t r () I 8 5 V C =8A 5. Ω Turn-on time t on() 3 Fall time t V f IN : t r ns 3 t f ns Duty cycle % 5 V Turn-off time t off 9 3 Ω ns Switching time (Discharge mode) Rise time t r () V CC 5V, I CP =A 5 V GG = 5V/V, R G =5.Ω Turn-on time t on() (Note 3) 5 ns Total gate charge (gate-emitter plus gate-drain) Q g V CE = 3 V, V GE = 5V, I C = A nc Note : Pulse width 8 μs (duty.%). 7-9-3
GT45F3 Note 3: Switching time measurement circuit and input/output waveforms. < Switching circuit of discharge mode> Ic R=KΩ R G =5.Ω V GG =5V PG C=.33 μf V CC 5V < Measurement waveforms > % t ON () V GE 9% V CE t r () % I C Caution on handling This MOS gate device is sensitive to electrostatic discharge (ESD). When handling the device, be sure that the environment is protected against static electricity. Caution in design This devise is designed for use in PDP-TVs. Please contact our sales section if the device is intended for any other use. 3 7-9-3
GT45F3 8 Tc = 4 C I C V CE 5 8 Tc = 5 C I C V CE 5 6 4 8 6 4 9 VGE = 8 V 6 4 8 6 4 9 VGE = 8 V 3 4 5 3 4 5 8 Tc = 5 C 6 4 8 6 4 I C V CE 5 9 VGE = 8 V Gate emitter cut-off voltage VGE (OFF) (V) 8 6 4 VCE = 5 V IC = ma V GE(OFF) Tc 3 4 5 8 4 4 8 6 Case temperature Tc ( C) 8 6 4 I C V GE VCE = 5 V Tc = 4 C 5 5 Collector emitter saturation voltage VCE (sat) (V) 3 VGE = 5 V V CE (sat) Tc 5 3 IC = A 4 6 8 Gate emitter voltage V GE (V) 4 4 8 6 Case temperature Tc ( C) 4 7-9-3
GT45F3 Collector emitter voltage VCE (V) V CE, V GE Q g 5 RL =.5 Ω Tc = 5 C 4 6 3 VCE = 3 V 8 4 5 5 Gate emitter voltage VGE (V) Capacitance C (pf) VGE = V f = MHZ Tc = 5 C. C V CE Cres Cies Coes Gate charge Qg (nc) Switching time (μs). VCC = 5 V VGG = +5 V / V IC = 8 A Tc = 5 toff ton tf tr Switching time R G Switching time (μs) toff tf ton. tr Switching time I C VCC = 5 V VGG = +5 V / V RG = 5. Ω Tc = 5. 4 6 8 Gate resistance R G (Ω) Collector current I C (A) 5 7-9-3
GT45F3 Safe operating area IC max (Pulse)A* *Single non-repetitive pulse Tc = 5 C Curves must be derated linearly with increase in temperature. μs* μs* 3 μs* Transient thermal impedance (Junction case) rth(j c) ( C/W). Tc = 5 Infinite Heat Sink r th(j c) t w. μ μ m m m Pulse width t w (s) 6 7-9-3
GT45F3 RESTRICTIONS ON PRODUCT USE 77-EN GENERAL The information contained herein is subject to change without notice. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).these TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer s own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 7-9-3