P-Channel Enhancement Mode MOSFET Features -2V/-95A, = 3.6mΩ(max.) @ =-1V = 4.6mΩ(max.) @ =-4.5V = 7mΩ(max.) @ =-2.5V = 1mΩ(max.) @ =-1.8V HBM ESD protection level of 2.3KV typical 1% UIS + R g Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Note : The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. Applications Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. Ordering and Marking Information Pin Description D D D D S S S G DFN3.3x3.3B-8_EP ( 5,6,7,8 ) DDDD (4) G S S S (1, 2, 3) P-Channel MOSFET SM343PS SM343PS QG : Assembly Material Handling Code Temperature Range Package Code Package Code QG : DFN3.3x3.3B-8_EP Operating Junction Temperature Range C : -55 to 15 o C Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device SM 343 XXXXX - Lot Code XXXXX Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 1% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-2D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 15ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1
Absolute Maximum Ratings (T A = 25 C Unless Otherwise Noted) Symbol Parameter Rating Unit V DSS Drain-Source Voltage -2 S Gate-Source Voltage ±12 I D a I DM a I D c I S a Continuous Drain Current ( =-4.5V) T A =25 C -25 T A =7 C -2 Pulsed Drain Current ( =-4.5V) -1 * Continuous Drain Current T C =25 C -95 T C =1 C -6 Diode Continuous Forward Current -5 T J Maximum Junction Temperature 15 C I AS d E AS d Avalanche Current, Single pulse L=.5mH -22 A Avalanche Energy, Single pulse L=.5mH 121 mj T STG Storage Temperature Range -55 to 15 C P D a P D c R θja a,b R θjc c Maximum Power Dissipation Maximum Power Dissipation Thermal Resistance-Junction to Ambient T A =25 C 4.2 T A =7 C 2.7 T C =25 C 62.5 T C =1 C 25 t 1s 3 Steady State 7 V A W C/W Thermal Resistance-Junction to Case 2 C/W Note *:Package limited. Note a:surface Mounted on 1in 2 pad area, t 1sec. Note b:maximum under Steady State conditions is 75 C/W. Note c:the power dissipation PD is based on TJ(MAX) = 15 o C, and it is useful for reducing junction-to-case thermal resistance (R θjc ) when additional heat sink is used. Note d:uis tested and pulse width limited by maximum junction temperature 15 o C (initial temperature Tj=25 o C). 2
Electrical Characteristics (T A = 25 C Unless Otherwise Noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage =V, I DS =-25µA -2 - - V I DSS Zero Gate Voltage Drain Current V DS =-16V, =V - - -1 T J =85 C - - -3 (th) Gate Threshold Voltage V DS =, I DS =-25µA -.4 - -.9 V I GSS Gate Leakage Current =±12V, V DS =V - - ±1 na e Drain-Source On-state Resistance Diode Characteristics V SD e t rr f Q rr f =-1V, I DS =-2A - 3 3.6 =-4.5V, I DS =-2A - 3.6 4.6 =-2.5V, I DS =-2A - 4.9 7 =-1.8V, I DS =-1A - 7 1 Diode Forward Voltage I SD =-1A, =V - -.5-1 V Reverse Recovery Time - 33 - ns I SD =-2A, dl SD /dt=1a/µs Reverse Recovery Charge - 17 - nc Dynamic Characteristics f C iss Input Capacitance =V, - 536 - C oss Output Capacitance V DS =-1V, - 13 - C rss Reverse Transfer Capacitance Frequency=1.MHz - 82 - R g Gate Resistance =V, V DS =V,F=1MHz - 3 - Ω t d(on) Turn-on Delay Time - 19 - t V DD =-1V, R L r Turn-on Rise Time =1Ω, - 25 - I DS =-1A, V GEN =-4.5V, t d(off) Turn-off Delay Time R G =6Ω - 228 - t f Turn-off Fall Time - 72 - Gate Charge Characteristics f Q g Total Gate Charge - 54 - Q gs Gate-Source Charge V DS =-1V, =-4.5V, I DS =-2A - 4.1 - Q gd Gate-Drain Charge - 17 - Note e:pulse test; pulse width 3µs, duty cycle 2%. Note f:guaranteed by design, not subject to production testing. µa mω pf ns nc 3
Typical Operating Characteristics Power Dissipation Drain Current 7 15 6 9 P tot - Power (W) 5 4 3 2 -I D - Drain Current (A) 75 6 45 3 1 15 T C =25 o C 2 4 6 8 1 12 14 16 T C =25 o C,V G =-4.5V 2 4 6 8 1 12 14 16 T j - Junction Temperature ( C) T j - Junction Temperature ( C) Safe Operation Area Thermal Transient Impedance 3 3 -I D - Drain Current (A) 1 1ms 1 1ms DC T C =25 o C 1.1.1 1 1 1 Rds(on) Limit Normalized Transient Thermal Resistance 1 Duty =.5.2.1.1.5.2.1.1 1E-3 Single Pulse R θjc :2 o C/W 1E-4 1E-6 1E-5 1E-4 1E-3.1.1 -V DS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) 4
Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 1 =-3,-4,-5,-6,-7,-8,-9,-1V 14 -I D - Drain Current (A) 8 6 4 2-2V -1.8V -1.5V - On - Resistance (mω) 12 1 8 6 4 2 =-1.8V =-2.5V =-4.5V =-1V..5 1. 1.5 2. 2.5 3. -V DS - Drain-Source Voltage (V) 2 4 6 8 1 -I D - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 18 I DS =-2A 1.6 I DS = -25µA - On Resistance (mω) 15 12 9 6 3 Normalized Threshold Voltage 1.4 1.2 1..8.6.4 1 2 3 4 5 6 7 8 9 1.2-5 -25 25 5 75 1 125 15 - - Gate - Source Voltage (V) T j - Junction Temperature ( C) 5
Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 1.8 1.6 = -4.5V I DS = -2A 1 Normalized On Resistance 1.4 1.2 1..8 -I S - Source Current (A) 1 1 T j =15 o C Tj=25oC.6 R ON @T j =25 o C: 3.6mΩ.4-5 -25 25 5 75 1 125 15 T j - Junction Temperature ( C).1..2.4.6.8 1. 1.2 1.4 -V SD - Source - Drain Voltage (V) Capacitance Gate Charge 9 8 Frequency=1MHz 1 9 V DS =-1V I DS =-2A C - Capacitance (pf) 7 6 5 4 3 2 1 Crss Coss Ciss - - Gate - source Voltage (V) 8 7 6 5 4 3 2 1 4 8 12 16 2 -V DS - Drain - Source Voltage (V) 2 4 6 8 1 12 Q G - Gate Charge (nc) 6
Avalanche Test Circuit and Waveforms VDS L tav DUT EAS RG VDD VDD tp IAS IL.1W tp VDSX(SUS) VDS Switching Time Test Circuit and Waveforms VDS RG VGS DUT RD VDD VGS 1% td(on) tr td(off) tf tp 9% VDS 7
Disclaimer Sinopower Semiconductor, Inc. (hereinafter Sinopower ) has been making great efforts to development high quality and better performance products to satisfy all customers needs. However, a product may fail to meet customer s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. 8
Classification Profile 9
Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin ) Temperature max (T smax ) Time (T smin to T smax ) (t s ) 1 C 15 C 6-12 seconds 15 C 2 C 6-12 seconds Average ramp-up rate (T smax to T P ) 3 C/second max. 3 C/second max. Liquidous temperature (T L ) Time at liquidous (t L ) Peak package body Temperature (T p )* Time (t P )** within 5 C of the specified classification temperature (T c ) 183 C 6-15 seconds 217 C 6-15 seconds See Classification Temp in table 1 See Classification Temp in table 2 2** seconds 3** seconds Average ramp-down rate (T p to T smax ) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p ) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process Classification Temperatures (Tc) Package Thickness Volume mm 3 <35 Table 2. Pb-free Process Classification Temperatures (Tc) Volume mm 3 35 <2.5 mm 235 C 22 C 2.5 mm 22 C 22 C Package Thickness Volume mm 3 <35 Volume mm 3 35-2 Volume mm 3 >2 <1.6 mm 26 C 26 C 26 C 1.6 mm 2.5 mm 26 C 25 C 245 C 2.5 mm 25 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERABILITY JESD-22, B12 5 Sec, 245 C HTRB JESD-22, A18 1 Hrs, 8% of VDS max @ Tjmax HTGB JESD-22, A18 1 Hrs, 1% of VGS max @ Tjmax PCT JESD-22, A12 168 Hrs, 1%RH, 2atm, 121 C TCT JESD-22, A14 5 Cycles, -65 C~15 C Customer Service Sinopower Semiconductor, Inc. 5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 378, Taiwan TEL: 886-3-5635818 Fax: 886-3-56358 1