FDB58 N-Channel Logic Level PowerTrench MOSFET 6V, 8A, 7mΩ Features r DS(ON) = 5.5mΩ (Typ.), V GS = 5V, I D = 8A High performance trench technology for extermely low Rdson Low Gate Charge High power and current handling capability Qualified to AEC Q RoHS Compliant Applications Motor/ Body Load Control ABS Systems Power Train Management Injection Systems DC-DC Converters and Off-Line UPS September 25 D GATE G SOURCE TO-263AB FDB SERIES DRAIN (FLANGE) S 25 Fairchild Semiconductor Corporation
MOSFET Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain to Source Voltage 6 V V GS Gate to Source Voltage ±2 V I D Drain Current Continuous (T C < 2 o C, V GS = V) 8 A Continuous (T C < 9 o C, V GS = 5V) 8 A Continuous (T amb = 25 o C, V GS = V, with R θja = 43 o C/W) 4 A Pulsed Figure 4 A E AS Single Pulse Avalanche Energy (Note ) 652 mj Power dissipation 242 W P D Derate above 25 o C.6 W/ o C T J, T STG Operating and Storage Temperature -55 to 75 o C Thermal Characteristics R θjc Thermal Resistance Junction to Case TO-263.62 o C/W R θja Thermal Resistance Junction to Ambient TO-263 ( Note 2) 62.5 o C/W R θja Thermal Resistance Junction to Ambient TO-263, in 2 copper pad area 43 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDB58 FDB58 TO-263AB 33mm 24mm 8 units Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics B VDSS Drain to Source Breakdown Voltage I D = 25µA, V GS = V 6 - - V I DSS Zero Gate Voltage Drain Current V DS = 48V - - V GS = V T C = 5 o C - - 25 I GSS Gate to Source Leakage Current V GS = ±2V - - ± na o C/W µa On Characteristics V GS(TH) Gate to Source Threshold Voltage V GS = V DS, I D = 25µA. - 2.5 V r DS(ON) Drain to Source On Resistance Dynamic Characteristics I D = 8A, V GS = V - 4.6 6. I D = 8A, V GS = 4.5V - 5.8 7.2 I D = 8A, V GS = 5V - 5.5 7. I D = 8A, V GS = V, T J = 75 o C - 2.6 C ISS Input Capacitance - 6625 - pf V DS = 5V, V GS = V, C OSS Output Capacitance - 628 - pf f = MHz C RSS Reverse Transfer Capacitance - 262 - pf R G Gate Resistance V GS =.5V, f = MHz -.4 - Ω Q g(tot) Total Gate Charge at V V GS = V to V Q g(5) Total Gate Charge at 5V V GS = V to 5V - 55 72 nc Q V DD = 3V g(th) Threshold Gate Charge V GS = V to V - 6. - nc I D = 8A Q gs Gate to Source Gate Charge - 8.4 - nc I g =.ma Q gs2 Gate Charge Threshold to Plateau - 2.5 - nc mω - 4 35 nc Q gd Gate to Drain Miller Charge - 2. - nc 2
Switching Characteristics (V GS = 5V) t ON Turn-On Time - - 62. ns t d(on) Turn-On Delay Time - 2.3 - ns t r Rise Time V DD = 3V, I D = 8A - 22. - ns t d(off) Turn-Off Delay Time V GS = 5V, R GS = 2Ω - 27. - ns t f Fall Time - 2. - ns t OFF Turn-Off Time - - 59. ns Drain-Source Diode Characteristics V SD Source to Drain Diode Voltage I SD = 8A - - 5 V I SD = 4A - -. V t rr Reverse Recovery Time I SD = 6A, di SD /dt = A/µs - - 44 ns Q RR Reverse Recovered Charge I SD = 6A, di SD /dt = A/µs - - 57 nc Notes: : Starting T J = 25 C, L = mh, I AS = 36A, V DD = 54V, V GS = V. 2: Pulse width = s. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9 and QS9 quality systems certification. 3
Typical Characteristics T C = 25 C unless otherwise noted POWER DISSIPATION MULTIPLIER..8.6.4.2 25 5 75 25 5 75 Figure. Z θjc, NORMALIZED THERMAL IMPEDANCE 2. T C, CASE TEMPERATURE ( o C) Normalized Power Dissipation vs Case Temperature DUTY CYCLE - DESCENDING ORDER.5.2..5.2. I D, DRAIN CURRENT (A) 4 2 8 6 4 2 Figure 2. R θjc =.62 C/W CURRENT LIMITED BY PACKAGE VGS = 5V VGS =V 25 5 75 25 5 T C, CASE TEMPERATURE ( C) Maximum Continuous Drain Current vs Case Temperature NOTES: DUTY FACTOR: D = t /t 2 SINGLE PULSE PEAK T J = P DM x R θjc + T C. -5-4 -3-2 - t, RECTANGULAR PULSE DURATION (s) P DM t t 2 Figure 3. Normalized Maximum Transient Thermal Impedance I DM, PEAK CURRENT (A) V GS = 5V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION T C = 25 o C FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: I = I 75 - T C 25 5 5-5 -4-3 -2 - t, PULSE WIDTH (s) Figure 4. Peak Current Capability 4
Typical Characteristics T C = 25 C unless otherwise noted I D, DRAIN TCURRENT (A) I D, DRAIN TCURRENT (A). Figure 5. 6 4 2 8 6 OPERATION IN THIS AREA MAY BE LIMITED BY r DS(ON) SINGLE PULSE T J = MAX RATED T C = 25 o C µs µs ms ms ms DC V DS, DRAIN TO SOURCE VOLTAGE (V) V DS = 6V Forward Bias Safe Operating Area PULSE DURATION = 8µs DUTY CYCLE =.5% MAX T A = 25 o C 4 T A = 25 o C 2 T A = -55 o C 2 3 4 5 V GS, GATE TO SOURCE VOLTAGE (V) I AS, AVALANCHE CURRENT (A) 5 NOTE: Refer to Fairchild Application Notes AN754 and AN755 I D, DRAIN TCURRENT (A) Figure 6. If R = t AV = (L)(I AS )/(.3*RATED BV DSS - V DD ) If R t AV = (L/R)ln[(I AS *R)/(.3*RATED BV DSS - V DD ) +] STARTING T J = 5 o C STARTING T J = 25 o C.. t AV, TIME IN AVALANCHE (ms) 6 4 2 8 6 4 2 Unclamped Inductive Switching Capability 5.V V 4.5V 4.V PULSE DURATION = 8µs DUTY CYCLE =.5% MAX 3.5V 3.V.5..5 2. V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics R DS(ON), ON-RESISTANCE(OHM).6.4.2..8.6.4 I D = 2A T A = 25 o C PULSE DURATION = 8µs DUTY CYCLE =.5% MAX T A = 75 o C NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.2 2..8.6.4..8 I D = 8A V GS = V PULSE DURATION = 8µs DUTY CYCLE =.5% MAX.2 2 4 6 8 V GS, GATE TO SOURCE VOLTAGE (V).6-8 - 4 4 8 2 6 T J, AMBIENT TEMPERATURE ( o C) 2 Figure 9. On-Resistance Variation vs Gate-to- Source Voltage Figure. Normalized Drain to Source On Resistance vs Junction Temperature 5
Typical Characteristics T C = 25 C unless otherwise noted NORMALIZED GATE THRESHOLD VOLTAGE.4..8.6.4.2-8 - 4 4 8 2 6 2 T J, AMBIENT TEMPERATURE ( o C) Figure. CAPACITANCE (pf) 2 V GS = V DS I D = 25µA Normalized Gate Threshold Voltage vs Junction Temperature f = MHz V GS = V C RSS C ISS C OSS. V DS, DRAIN TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE V GS, GATE- SOURCE VOLTAGE.. I D = 25µA.9-8 - 4 4 8 2 6 2 T J, AMBIENT TEMPERATURE ( o C) Figure 2. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 8 6 4 2 VDD =3V WAVEFORMS IN ASCENDING ORDER: ID = 8A ID = A 2 4 6 8 Q g, GATE CHARGE (nc) Figure 3. Capacitance vs Drain to Source Voltage Figure 4. Gate Charge Waveforms for Constant Gate Current 6
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