VS-MBR6...PbF Series, VS-MBR6...-N3 Series Schottky Rectifier, 6 TO-220C PRODUCT SUMMRY Package TO-220C I F(V) 6 V R 35 V, 45 V V F at I F 0.57 V I RM max. 40 m at 25 C T J max. 50 C Diode variation Single die E S Base cathode 2 3 Cathode node 24 mj FETURES 50 C T J operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Compliant to RoHS Directive 2002/95/EC Designed and qualified according to JEDEC-JESD47 Halogen-free according to IEC 6249-2-2 definition (-N3 only) DESCRIPTION The VS-MBR6... Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 50 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MJOR RTINGS ND CHRCTERISTICS SYMBOL CHRCTERISTICS VLUES UNITS I F(V) Rectangular waveform 6 V RRM 35/45 V I FSM t p = 5 μs sine 800 V F 6 pk, 0.57 V T J Range - 65 to 50 C VOLTGE RTINGS PRMETER SYMBOL VS-MBR635PbF VS-MBR635-N3 VS-MBR645PbF VS-MBR645-N3 UNITS Maximum DC reverse V voltage R 35 35 45 45 V Maximum working peak V reverse voltage RWM BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Maximum average forward current I F(V) T C = 34 C, rated V R 6 Non-repetitive peak surge current I FSM Following any rated load V RRM applied 5 µs sine or 3 µs rect. pulse condition and with rated 800 Surge applied at rated load condition half wave single phase, 60 Hz 50 Non-repetitive avalanche energy E S, I S = 3.6, L = 3.7 mh 24 mj Current decaying linearly to zero in μs Repetitive avalanche current I R Frequency limited by T J maximum V =.5 x V R typical 3.6 Revision: 29-ug- Document Number: 94286
VS-MBR6...PbF Series, VS-MBR6...-N3 Series ELECTRICL SPECIFICTIONS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Maximum forward voltage drop V FM () 6 Note () Pulse width < 300 μs, duty cycle < 2 % 0.63 0.57 0.2 Maximum instantaneous reverse current I () RM Rated DC voltage 40 m Maximum junction capacitance C T V R = 5 V DC (test signal range 0 khz to MHz) 25 C 400 pf Typical series inductance L S Measured from top of terminal to mounting plane 8.0 nh Maximum voltage rate of change dv/dt Rated V R 000 V/µs V THERML - MECHNICL SPECIFICTIONS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Maximum junction temperature range T J - 65 to 50 Maximum storage temperature range T Stg - 65 to 75 C Maximum thermal resistance, junction to case R thjc DC operation.50 Typical thermal resistance, case to heatsink R thcs Mounting surface, smooth and greased 0.50 C/W pproximate weight Mounting torque Marking device 2 g 0.07 oz. minimum 6 (5) kgf cm maximum 2 () (lbf in) Case style TO-220C (JEDEC) MBR635 MBR645 Revision: 29-ug- 2 Document Number: 94286
VS-MBR6...PbF Series, VS-MBR6...-N3 Series I F - Instantaneous Forward Current () 0 0 0.2 0.4 0.6 0.8 T J = 50 C.0.2 I R - Reverse Current (µ) 0 0. 0.0 0.00 0.000 0 T J = 50 C T J = 0 C T J = 75 C T J = 50 C 5 5 20 25 30 35 40 45 V FM - Forward Voltage Drop (V) V R - Reverse Voltage (V) Fig. - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 000 C T - Junction Capacitance (pf) 00 0 0 20 30 40 50 V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Impedance ( C/W) 0. 0.0 Single pulse (thermal resistance) D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.00 0.0000 0.000 0.00 0.0 0. t - Rectangular Pulse Duration (s) P DM Notes:. Duty factor D = t /t 2. 2. Peak T J = P DM x Z thjc + T C t t 2 Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics Revision: 29-ug- 3 Document Number: 94286
VS-MBR6...PbF Series, VS-MBR6...-N3 Series 55 5 llowable Case Temperature ( C) 50 45 40 35 30 Square wave (D = 0.50) Rated V R applied DC 25 See note () 20 0 5 5 20 25 verage Power Loss (W) 5 DC RMS limit D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0 0 5 5 20 25 I F(V) - verage Forward Current () I F(V) - verage Forward Current () Fig. 5 - Maximum llowable Case Temperature vs. verage Forward Current Fig. 6 - Forward Power Loss Characteristics I FSM - Non-Repetitive Surge Current () 000 00 0 t any rated load condition and with rated V RRM applied following surge 0 00 t p - Square Wave Pulse Duration (µs) 000 Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) L D.U.T. IRFP460 High-speed switch Current monitor R g = 25 Ω Freewheel diode 40HFL40S02 + V d = 25 V Fig. 8 - Unclamped Inductive Test Circuit Note () Formula used: T C = T J - (Pd + Pd REV ) x R thjc ; Pd = Forward power loss = I F(V) x V FM at (I F(V) /D) (see fig. 6); Pd REV = Inverse power loss = V R x I R ( - D); I R at V R = Rated V R applied Revision: 29-ug- 4 Document Number: 94286
ORDERING INFORMTION TBLE VS-MBR6...PbF Series, VS-MBR6...-N3 Series Device code VS- MBR 6 45 PbF 2 3 4 5 2 3 4 5 - product - Schottky MBR series - Current rating (6 = 6 ) - Voltage ratings - Environmental digit 35 = 35 V 45 = 45 V PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PCKGING DESCRIPTION VS-MBR635PbF 50 00 ntistatic plastic tube VS-MBR635-N3 50 00 ntistatic plastic tube VS-MBR645PbF 50 00 ntistatic plastic tube VS-MBR645-N3 50 00 ntistatic plastic tube Dimensions Part marking information LINKS TO RELTED DOCUMENTS TO-220C PbF TO-220C -N3 www.vishay.com/doc?9522 www.vishay.com/doc?95224 www.vishay.com/doc?95068 Revision: 29-ug- 5 Document Number: 94286
Outline Dimensions TO-220C DIMENSIONS in millimeters and inches (6) E E2 (7) Ø P 0.04 M B M B Seating plane E Thermal pad 2 3 D D C C L (6) D Q D Detail B (6) H (7) H θ D2 (6) 2 x b2 2 x b Detail B L3 L4 3 2 L C E (6) Lead assignments Diodes + 2 - Cathode 3 - node Lead tip e 0.05 M B M c 2 View - Conforms to JEDEC outline TO-220C SYMBOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.25 4.65 0.67 0.83 E 6.86 8.89 0.270 0.350 6.4.40 0.045 0.055 E2-0.76-0.030 7 2 2.56 2.92 0. 0.5 e 2.4 2.67 0.095 0.5 b 0.69.0 0.027 0.040 e 4.88 5.28 0.92 0.208 b 0.38 0.97 0.05 0.038 4 H 6.09 6.48 0.240 0.255 6, 7 b2.20.73 0.047 0.068 L 3.52 4.02 0.532 0.552 b3.4.73 0.045 0.068 4 L 3.32 3.82 0.3 0.50 2 c 0.36 0.6 0.04 0.024 L3.78 2.3 0.070 0.084 c 0.36 0.56 0.04 0.022 4 L4 0.76.27 0.030 0.050 2 D 4.85 5.25 0.585 0.600 3 Ø P 3.54 3.73 0.39 0.47 D 8.38 9.02 0.330 0.355 Q 2.60 3.00 0.2 0.8 D2.68 2.88 0.460 0.507 6 90 to 93 90 to 93 E..5 0.398 0.44 3, 6 Notes () Dimensioning and tolerancing as per SME Y4.5M-994 (2) Lead dimension and finish uncontrolled in L (3) Dimension D, D and E do not include mold flash. Mold flash shall not exceed 0.27 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b, b3 and c apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H, D2 and E (7) Dimension E2 x H define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 9522 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 07-Mar- Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com
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