MOSFET OptiMOS TM PowerTransistor,6V DPAK Features PChannel VerylowonresistanceRDS(on) 1%avalanchetested NormalLevel Enhancementmode Pbfreeleadplating;RoHScompliant HalogenfreeaccordingtoIEC61249221 ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttestsof JEDEC47/2/22 1 3 tab Table1KeyPerformanceParameters Parameter Value Unit VDS 6 V RDS(on),max 65 mω ID 22 A Gate Pin 1 Drain tab Source Pin 3 Type/OrderingCode Package Marking RelatedLinks PGTO 2523 6P3N 1
OptiMOS TM PowerTransistor,6V TableofContents Description............................................................................. 1 Maximum ratings........................................................................ 3 Thermal characteristics.................................................................... 3 Electrical characteristics................................................................... 3 Electrical characteristics diagrams........................................................... 5 Package Outlines........................................................................ 9 Revision History........................................................................ 1 Trademarks........................................................................... 1 Disclaimer............................................................................ 1 2
OptiMOS TM PowerTransistor,6V 1Maximumratings attc=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Unit Note/TestCondition Continuous drain current ID Pulsed drain current 1) ID,pulse 88 A TC=25 C 22 17 A VGS=1V,TC=25 C VGS=1V,TC=1 C Avalanche energy, single pulse 2) EAS 329 mj ID=22A,RGS=25Ω Gate source voltage VGS 2 2 V Power dissipation Ptot 83 W TC=25 C Operating and storage temperature Tj,Tstg 55 175 C IEC climatic category; DIN IEC 681: 55/175/56 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Unit Note/TestCondition Thermal resistance, junction case, bottom RthJC 1.8 C/W Device on PCB, 6 cm² cooling area 3) RthJA 75 C/W 3Electricalcharacteristics attj=25 C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 6 V VGS=V,ID=25µA Gate threshold voltage VGS(th) 2.1 3 4 V VDS=VGS,ID=14µA Zero gate voltage drain current IDSS.1 1 1 1 µa VDS=6V,VGS=V,Tj=25 C VDS=6V,VGS=V,Tj=125 C Gatesource leakage current IGSS 1 1 na VGS=2V,VDS=V Drainsource onstate resistance RDS(on) 52 65 mω VGS=1V,ID=22A Gate resistance RG 5 Ω Transconductance gfs 21 S VDS 2 ID RDS(on)max,ID=22A 1) See Diagram 3 for more detailed information 2) See Diagram 13 for more detailed information 3) Device on 4 mm x 4 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. 3
OptiMOS TM PowerTransistor,6V Table5Dynamiccharacteristics Parameter Symbol Unit Note/TestCondition Input capacitance Ciss 16 pf VGS=V,VDS=3V,f=1MHz Output capacitance Coss 22 pf VGS=V,VDS=3V,f=1MHz Reverse transfer capacitance Crss 54 pf VGS=V,VDS=3V,f=1MHz Turnon delay time td(on) 12 ns Rise time tr 14 ns Turnoff delay time td(off) 33 ns Fall time tf 12 ns VDD=3V,VGS=1V,ID=11A, RG,ext=1.6Ω VDD=3V,VGS=1V,ID=11A, RG,ext=1.6Ω VDD=3V,VGS=1V,ID=11A, RG,ext=1.6Ω VDD=3V,VGS=1V,ID=11A, RG,ext=1.6Ω Table6Gatechargecharacteristics 1) Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs 9 nc VDD=3V,ID=22A,VGS=to1V Gate charge at threshold Qg(th) 5 nc VDD=3V,ID=22A,VGS=to1V Gate to drain charge Qgd 15 nc VDD=3V,ID=22A,VGS=to1V Switching charge Qsw 19 nc VDD=3V,ID=22A,VGS=to1V Gate charge total Qg 39 nc VDD=3V,ID=22A,VGS=to1V Gate plateau voltage Vplateau 5.5 V VDD=3V,ID=22A,VGS=to1V Output charge Qoss 28 nc VDD=3V,VGS=V Table7Reversediode Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS 22 A TC=25 C Diode pulse current IS,pulse 88 A TC=25 C Diode forward voltage VSD.9 1.2 V VGS=V,IF=22A,Tj=25 C Reverse recovery time trr 39 ns VR=3V,IF=22A,diF/dt=1A/µs Reverse recovery charge Qrr 83 nc VR=3V,IF=22A,diF/dt=1A/µs 1) See Diagram Gate charge waveforms for gate charge parameter definition 4
OptiMOS TM PowerTransistor,6V 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 1 Diagram2:Draincurrent 24 9 8 2 7 16 6 Ptot[W] 5 ID[A] 12 4 3 8 2 4 1 25 5 75 1 125 15 175 2 TC[ C] Ptot=f(TC) 25 5 75 1 125 15 175 2 TC[ C] ID=f(TC); VGS 1V Diagram3:Safeoperatingarea 1 2 1 µs Diagram4:Max.transientthermalimpedance 1 1 1 µs 1 1 1 ms 1.5 ID[A] ZthJA[K/W].2.1 1 1 ms DC 1 1.5.2.1 single pulse 1 1 1 1 1 1 1 1 2 VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp 1 2 1 5 1 4 1 3 1 2 1 1 1 tp[s] ZthJC=f(tp);parameter:D=tp/T 5
OptiMOS TM PowerTransistor,6V Diagram5:Typ.outputcharacteristics 6 5 1 V 8 V 7 V Diagram6:Typ.drainsourceonresistance 14 12 4 1 4.5 V 5 V 6 V ID[A] 3 6 V RDS(on)[mΩ] 8 6 7 V 8 V 1 V 2 5 V 4 1 4.5 V 2 1 2 3 4 5 VDS[V] ID=f(VDS),Tj=25 C;parameter:VGS 1 2 3 4 5 ID[A] RDS(on)=f(ID),Tj=25 C;parameter:VGS Diagram7:Typ.transfercharacteristics 3 Diagram8:Typ.drainsourceonresistance 16 25 14 2 12 1 175 C ID[A] 15 1 RDS(on)[mΩ] 8 6 25 C 4 5 175 C 25 C 1 2 3 4 5 6 7 VGS[V] ID=f(VGS), VDS >2 ID RDS(on)max;parameter:Tj 2 6 7 8 9 1 VGS[V] RDS(on)=f(VGS),ID=22A;parameter:Tj 6
OptiMOS TM PowerTransistor,6V Diagram9:Normalizeddrainsourceonresistance 2.4 Diagram1:Typ.gatethresholdvoltage 3.5 2. RDS(on)(normalizedto25 C) 1.6 1.2.8 VGS(th)[V] 3. 2.5 14 µa.4 14 µa. 8 4 4 8 12 16 2 Tj[ C] RDS(on)=f(Tj),ID=22A,VGS=1V 2. 8 4 4 8 12 16 2 Tj[ C] VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 1 4 Ciss 1 2 25 C 25 C, max 175 C 175 C, max 1 3 1 1 C[pF] Coss IF[A] 1 2 Crss 1 1 1 1 2 3 4 5 6 VDS[V] C=f(VDS);VGS=V;f=1MHz 1 1..25.5.75 1. 1.25 1.5 VSD[V] IF=f(VSD);parameter:Tj 7
OptiMOS TM PowerTransistor,6V Diagram13:Avalanchecharacteristics 1 2 Diagram14:Typ.gatecharge 1 12 V 3 V 48 V 8 6 IAV[A] 1 1 25 C VGS[V] 4 1 C 2 1 15 C 1 1 1 1 2 1 3 tav[µs] IAS=f(tAV);RGS=25Ω;parameter:Tj,start 5 1 15 2 25 3 35 4 Qgate[nC] VGS=f(Qgate),ID=22Apulsed,Tj=25 C;parameter:VDD Diagram15:Drainsourcebreakdownvoltage 68 Diagram Gate charge waveforms 66 64 VBR(DSS)[V] 62 6 58 56 8 4 4 8 12 16 2 Tj[ C] VBR(DSS)=f(Tj);ID=25µA 8
9 OptiMOS TM PowerTransistor,6V 5PackageOutlines 2.5 REVISION 6 52216 ISSUE DATE EUROPEAN PROJECTION SCALE 5mm 2.5 DOCUMENT NO. Z8B3328 MILLIMETERS 4.57 (BSC) 2.29 (BSC) L4 D N H E1 e1 e E D1 L3 1.18.51.89 5.2 9.4 6.35 4.32 5.97 3 b3 A DIM b2 c b c2 A1 4,95 MIN 2.16.64.46.65.4..46.2.35.198.25.185.235.37 1.78 1.2 5.21 5.84 6.22 6.73 1.27 1.48.18 (BSC).9 (BSC) 3.7.25.4.23.265.5.245.413.195.85.25.18.26.16. 5.5 MAX 2.41.15 1.15.61.89.98 INCHES MIN.217 MAX.6.95.35.24.45.39 L Figure1OutlinePGTO2523,dimensionsinmm/inches
OptiMOS TM PowerTransistor,6V RevisionHistory Revision:21859,Rev.2. Previous Revision Revision Date Subjects (major changes since last revision) 2. 21859 Release of final version TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,iWafer,MIPAQ,ModSTACK,myd,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PROSIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust215 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany 218InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ( Beschaffenheitsgarantie ). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer sproductsandanyuseofthe productofinfineontechnologiesincustomer sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 1