AOKBD V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dv/dt conditions and resistance to oscillations.the soft copackaged diode is targeted for minimal losses in Welding machines, Solar Inverter and UPS applications. Product Summary V CE I C (T C = C) V A V CE(sat) (T C =).85V Top View TO-7 C AOKBD G C E Absolute Maximum Ratings T A = unless otherwise noted Parameter Symbol AOKBD Collector-Emitter Voltage Gate-Emitter Voltage V GE Spike Continuous Collector Current Diode Pulsed Current, Limited by T Jmax Short circuit withstanding time V GE = 5V, V CE V, Delay between short circuits.s, T C = Power Dissipation T C = C Pulsed Collector Current, Limited by T Jmax Turn off SOA, V CE V, Limited by T Jmax Continuous Diode T C = Forward Current T C = C T C = T C = C V CE V GE V SPIKE I CM I LM I FM t SC P D Junction and Storage Temperature Range Maximum lead temperature for soldering T J, T STG -55 to 5 C purpose, /8" from case for 5 seconds Thermal Characteristics T L 3 C Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Symbol R θ JA R θ JC AOKBD.3 Units C/W C/W Maximum Diode Junction-to-Case.95 C/W R θ JC G E Units V ± V 5ns V T C = I C I F 3 A µs 7 7 A A A A W Rev..: Nov 3 www.aosmd.com Page of 9
AOKBD Electrical Characteristics (T J = unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage I C =ma, V GE =V, T J = - - V V CE(sat) V F T J = -.85. T J = -. - T J =5 C -.3 - T J = -.3.9 T J = -.3 - T J =5 C -.8 - V GE(th) Gate-Emitter Threshold Voltage V CE =5V, I C =ma - 5. - V I CES T J = - - T J = - - T J =5 C - - 5 I GES Gate-Emitter leakage current V CE =V, V GE =±V - - ± na g FS C ies C oes C res Q g Q ge t D(on) t r Collector-Emitter Saturation Voltage Diode Forward Voltage Zero Gate Voltage Collector Current Forward Transconductance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge V GE =5V, I C =A V GE =V, I C =3A V CE =V, V GE =V V CE =V, I C =A V GE =V, V CE =5V, f=mhz Gate to Emitter Charge V GE =5V, V CE =8V, I C =A Q gc Gate to Collector Charge Short circuit collector current, Max. I C(SC) short circuits, Delay between V GE =5V, V CE =V, R G =5Ω short circuits.s R g Gate resistance f=mhz SWITCHING PARAMETERS, (Load Iductive, T J =) t D(off) t f E on E off E total t rr t D(on) t r t D(off) t f E on E off E total t rr Q rr I rm Turn-On DelayTime Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Energy Turn-Off Energy Total Switching Energy T J = V GE =5V, V CE =V, I C =A, R G =5Ω, Parasitic Ιnductance=5nH Diode Reverse Recovery Time T J = Q rr Diode Reverse Recovery Charge I F =3A,dI/dt=A/µs,V CE =V I rm Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Iductive, T J =5 C) Turn-On DelayTime Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Energy Turn-Off Energy Total Switching Energy Diode Reverse Recovery Time Diode Reverse Recovery Charge Diode Peak Reverse Recovery Current T J =5 C V GE =5V, V CE =V, I C =A, R G =5Ω, Parasitic Inductance=5nH T J =5 C I F =3A,dI/dt=A/µs,V CE =V V V µa - 5 - S - 388 - pf - 39 - pf -.3 - pf - 75 - nc - 7.3 - nc -.7 - nc - - A -. - Ω - 3 - ns - 7 - ns - 7 - ns - - ns - 3. - mj -.73 - mj - 3.8 - mj - 37 - ns -.8 - µc - - A - 3 - ns - 78 - ns - 89 - ns - - ns - 3.5 - mj -. - mj -.7 - mj - 3 - ns -.7 - µc - 3.8 - A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev..: Nov 3 www.aosmd.com Page of 9
AOKBD 5 V 7V 5V 5 V 7V 5V 5 3V 5 3V V V 5 V GE = 7V 8V 9V 5 V GE =7V 8V 9V 3 5 7 V CE (V) Fig : Output Characteristic (T j = ) 3 5 7 V CE (V) Fig : Output Characteristic (T j =5 C ) V CE =V - C 8 8 5 C I F (A) 5 C - C 7 3 V GE (V) Fig 3: Transfer Characteristic..5..5..5 V F (V) Fig : Diode Characteristic 5 8 I C =A 7 V CE(sat) (V) 3 I C =A V GE(TH) (V) 5 I C =3A 3 5 5 75 5 5 75 Temperature ( C) Fig 5: Collector-Emitter Saturation Voltage vs. Junction Temperature 3 9 5 T J ( C) Figure : V GE(TH) vs. T j Rev..: Nov 3 www.aosmd.com Page 3 of 9
AOKBD 5 V CE =8V I C =A C ies V GE (V) 9 3 Capacitance (pf) C oes C res 8 Q g (nc) Fig 7: Gate-Charge Characteristics 5 5 5 3 35 V CE (V) Fig 8: Capacitance Characteristic 5 Power Disspation(W) 3 5 5 75 5 5 T CASE ( C) Fig : Power Disspation as a Function of Case 8 Current rating 5 5 75 5 5 T CASE ( C) Fig : Current De-rating Rev..: Nov 3 www.aosmd.com Page of 9
AOKBD Switching Time (ns) Td(off) Tf Td(on) Tr, Switching Time (ns), Td(off) Tf Td(on) Tr 8 3 5 R g (Ω) Figure : Switching Time vs. I C (T j =5 C,V GE =5V,V CE =V,R g =5Ω) Figure 3: Switching Time vs. R g (T j =5 C,V GE =5V,V CE =V,I C =A) Td(off) Tf Switching Time (ns) Td(on) Tr 5 5 T J ( C) Figure : Switching Time vs.t j ( V GE =5V,V CE =V,I C =A,R g =5Ω) Rev..: Nov 3 www.aosmd.com Page 5 of 9
AOKBD 5 Eoff 8. Eoff SwitchIng Energy (mj) 5 5 Eon Etotal Switching Energy (mj)... Eon Etotal 8 Figure 5: Switching Loss vs. I C (T j =5 C,V GE =5V,V CE =V,R g =5Ω). 3 5 R g (Ω) Figure : Switching Loss vs. R g (T j =5 C,V GE =5V,V CE =V,I C =A) 8 Eoff Eon Etotal 8. 7.. Eoff Eon Etotal Switching Energy (mj) Switching Energ y (mj) 5.. 3... 5 5 75 5 5 75 T J ( C) Figure 7: Switching Loss vs. T j (V GE =5V,V CE =V,I C =A,R g =5Ω). 5 3 35 5 5 V CE (V) Figure 8: Switching Loss vs. V CE (T j =5 C,V GE =5V,I C =A,R g =5Ω) Rev..: Nov 3 www.aosmd.com Page of 9
AOKBD.E-3.8.E- V CE =V. A I CE(S) (A).E-5.E-.E-7 V CE =V V SD (V). 3A 5A IF=A 3V.E-8 5 5 75 5 5 75 Temperature ( C ) Fig 9: Diode Reverse Leakage Current vs. Junction Temperature. 5 5 75 5 5 75 Temperature ( C ) Fig : Diode Forward voltage vs. Junction Temperature 5 3 5 C 8 5 5 C 5 Q rr (nc) 5 5 5 C Q rr I rm 3 5 7 I F (A) Fig : Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (V GE =5V,V CE =V, di/dt=a/µs) I rm (A) T rr (ns) 5 5 5 C T rr 3 5 7 I S (A) Fig : Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (V GE =5V,V CE =V, di/dt=a/µs) S 3 S 5 3 5 C 8 5 Q rr (nc) 5 5 5 C Q rr I rm I rm (A) T rr (ns) 5 5 5 C 5 C T rr 8 S 3 5 7 8 9 di/dt (A/µS) Fig 3: Diode Reverse Recovery Charge and Peak Current vs. di/dt (V GE =5V,V CE =V,I F =3A) S 3 5 7 8 9 di/dt (A/µS) Fig : Diode Reverse Recovery Time and Softness Factor vs. di/dt (V GE =5V,V CE =V,I F =3A) Rev..: Nov 3 www.aosmd.com Page 7 of 9
AOKBD Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T C +P DM.Z θjc.r θjc R θjc =.3 C/W Single Pulse In descending order D=.5,.3,.,.5,.,., single pulse P D T on T. E- E-5.... Pulse Width (s) Figure 5: Normalized Maximum Transient Thermal Impedance for IGBT Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T C +P DM.Z θjc.r θjc R θjc =.95 C/W Single Pulse In descending order D=.5,.3,.,.5,.,., single pulse P D T on T. E-5.... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance for Diode Rev..: Nov 3 www.aosmd.com Page 8 of 9
AOKBD Rev..: Nov 3 www.aosmd.com Page 9 of 9