DMG Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm. For general amplification.

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Transcription:

DMG242 Silicon NPN epitaxial planar type (Tr) Silicon PNP epitaxial planar type (Tr2) Unit: mm For general amplification Features High forward current transfer ratio h FE with excellent linearity Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V- / MSL: Level compliant) Marking Symbol: B7 Basic Part Number DSC22 + DSA22 (Individual) Packaging DMG242R Embossed type (Thermo-compression sealing): 3 pcs / reel (standard) Absolute Maximum Ratings Parameter Symbol Rating Unit : Emitter (Tr) 2: Base (Tr) 3: Collector (Tr2) Panasonic JEITA Code 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr) Mini6-G4-B SC-74 SOT-457 Collector-base voltage (Emitter open) V CBO 6 V Collector-emitter voltage (Base open) V CEO 5 V (C) 6 (B2) 5 (E2) 4 Tr Emitter-base voltage (Collector open) V EBO 5 V Collector current I C 5 ma Tr Tr2 Peak collector current I CP A Collector-base voltage (Emitter open) V CBO 6 V Collector-emitter voltage (Base open) V CEO 5 V (E) 2 (B) 3 (C2) Tr2 Emitter-base voltage (Collector open) V EBO 5 V Collector current I C 5 ma Peak collector current I CP A Total power dissipation P T 3 mw Overall Junction temperature T j 5 C Operating ambient temperature T opr 4 to +85 C Storage temperature T stg 55 to +5 C Publication date: January 24

DMG242 Electrical Characteristics ±3 C Tr Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V CBO I C = µa, I E = 6 V Collector-emitter voltage (Base open) V CEO I C = 2 ma, I B = 5 V Emitter-base voltage (Collector open) V EBO I E = µa, I C = 5 V Collector-base cutoff current (Emitter open) I CBO V CB = 2 V, I E =. µa Forward current transfer ratio * Collector-emitter saturation voltage * h FE V CE = V, I C = 5 ma 2 34 h FE2 V CE = V, I C = 5 ma 4 V CE(sat) I C = 3 ma, I B = 3 ma..6 V Transition frequency f T V CE = V, I C = 5 ma 6 MHz (Common base, input open circuited) C ob V CB = V, I E =, f = MHz 4.8 5 pf Note). Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 73 measuring methods for transistors. 2. *: Pulse measurement Tr2 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V CBO I C = µa, I E = 6 V Collector-emitter voltage (Base open) V CEO I C = 2 ma, I B = 5 V Emitter-base voltage (Collector open) V EBO I E = µa, I C = 5 V Collector-base cutoff current (Emitter open) I CBO V CB = 2 V, I E =. µa Forward current transfer ratio * Collector-emitter saturation voltage * Base-emitter saturation voltage * h FE V CE = V, I C = 5 ma 2 34 h FE V CE = V, I C = 5 ma 4 V CE(sat) I C = 3 ma, I B = 3 ma.2.6 V V BE(sat) I C = 3 ma, I B = 3 ma.9.5 V Transition frequency f T V CE = V, I C = 5 ma 3 MHz (Common base, input open circuited) C ob V CB = V, I E =, f = MHz 7.3 5 pf Note). Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 73 measuring methods for transistors. 2. *: Pulse measurement 2

DMG242 Common characteristics chart 4 P T T a Total power dissipation P T (mw) 3 2 4 8 2 6 2 Ambient temperature T a ( C) Characteristics charts of Tr I C V CE h FE I C V CE(sat) I C 6 5 I B = 3. ma 2.7 ma 2.4 ma 4 2. ma.8 ma 3.5 ma.2 ma 2.9 ma.6 ma.3 ma 2 4 6 8 2 Forward current transfer ratio h FE 3 25 2 5 5 4 C V CE = V Collector-emitter saturation voltage V CE(sat) (V).. I C / I B = 4 C Collector-emitter voltage V CE (V) I C V BE C ob V CB f T I C 5 4 3 2 V CE = V 4 C.4.8.2 (Common base, input open circuited) C ob (pf) 2 6 2 8 4 I E = f = MHz Transition frequency f T (MHz) 25 2 5 5. V CE = V Base-emitter voltage V BE (V) Collector-base voltage V CB (V) 3

DMG242 Characteristics charts of Tr2 I C V CE h FE I C V CE(sat) I C 8 I B = 5 µa 4 µa 6 3 µa 4 2 µa 2 µa 2 4 6 8 2 Forward current transfer ratio h FE 3 25 2 5 5 V CE = V 4 C Collector-emitter saturation voltage V CE(sat) (V).. I C / I B = 4 C Collector-emitter voltage V CE (V) 6 5 4 3 2 V CE = V I C V BE C ob V CB f T I C 25 2 I E = f = MHz 4 C.4.8.2 Base-emitter voltage V BE (V) (Common base, input open circuited) C ob (pf) 2 5 5 Collector-base voltage V CB (V) Transition frequency f T (MHz) 6 2 8 4. V CE = V 4

DMG242 Mini6-G4-B Unit: mm Land Pattern (Reference) (Unit: mm) 5

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