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DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic V DS Continuous drain source voltage 5 V envelope, intended as a general I D Continuous drain current 26 A purpose switch for automotive P D Total power dissipation 75 W systems and other applications. T j Continuous junction temperature 5 C R DS(ON) Drain-source on-state resistance 6 mω APPLICATIONS V IS = 5 V General controller for driving lamps motors solenoids heaters FEATURES FUNCTIONAL BLOCK DIAGRAM Vertical power DMOS output stage Low on-state resistance Overload protection against over temperature Overload protection against short circuit load Latched overload protection reset by input 5 V logic compatible input level Control of power MOSFET and supply of overload protection circuits derived from input Low operating input current ESD protection on input pin Overvoltage clamping for turn off of inductive loads INPUT RIG LOGIC AND PROTECTION O/V CLAMP DRAIN POWER MOSFET SOURCE Fig.. Elements of the TOPFET. PINNING - TO22AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION input tab TOPFET D 2 drain 3 source I P tab drain 2 3 S January 993 Rev 2.6
LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 34) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DSS Continuous off-state drain source V IS = V - 5 V voltage V IS Continuous input voltage - 6 V I D Continuous drain current T mb 25 C; V IS = 5 V - 26 A I D Continuous drain current T mb C; V IS = 5 V - 6 A I DRM Repetitive peak on-state drain current T mb 25 C; V IS = 5 V - A P D Total power dissipation T mb 25 C - 75 W T stg Storage temperature - -55 5 C T j Continuous junction temperature normal operation - 5 C T sold Lead temperature during soldering - 25 C OVERLOAD PROTECTION LIMITING VALUES With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V ISP Protection supply voltage 2 for valid protection 4 - V Over temperature protection V DDP(T) Protected drain source supply voltage V IS = 5 V - 5 V Short circuit load protection V DDP(P) Protected drain source supply voltage 3 V IS = 5 V - 35 V P DSM Instantaneous overload dissipation T mb = 25 C -.3 kw OVERVOLTAGE CLAMPING LIMITING VALUES At a drain source voltage above 5 V the power MOSFET is actively turned on to clamp overvoltage transients. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT I DROM Repetitive peak clamping current V IS = V - 26 A E DSM Non-repetitive clamping energy T mb 25 C; I DM = 26 A; - 625 mj V DD 2 V; inductive load E DRM Repetitive clamping energy T mb 95 C; I DM = 8 A; - 4 mj V DD 2 V; f = 25 Hz ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V C Electrostatic discharge capacitor Human body model; - 2 kv voltage C = 25 pf; R =.5 kω A higher T j is allowed as an overload condition but at the threshold T j(to) the over temperature trip operates to protect the switch. 2 The input voltage for which the overload protection circuits are functional. 3 The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed V DDP(P) maximum. For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS. January 993 2 Rev 2.6
THERMAL CHARACTERISTICS Thermal resistance R th j-mb Junction to mounting base - -.3.67 K/W R th j-a Junction to ambient in free air - 6 - K/W STATIC CHARACTERISTICS T mb = 25 C unless otherwise specified V (CL)DSS Drain-source clamping voltage V IS = V; I D = ma 5 - - V V (CL)DSS Drain-source clamping voltage V IS = V; I DM = 2 A; t p 3 µs; - - 7 V δ. I DSS Zero input voltage drain current V DS = 2 V; V IS = V -.5 µa I DSS Zero input voltage drain current V DS = 5 V; V IS = V - 2 µa I DSS Zero input voltage drain current V DS = 4 V; V IS = V; T j = 25 C - µa R DS(ON) Drain-source on-state V IS = 5 V; I DM = 3 A; t p 3 µs; - 45 6 mω resistance δ. OVERLOAD PROTECTION CHARACTERISTICS TOPFET switches off when one of the overload thresholds is reached. It remains latched off until reset by the input. Short circuit load protection T mb = 25 C; L µh E DS(TO) Overload threshold energy V DD = 3 V; V IS = 5 V -.4 - J t d sc Response time V DD = 3 V; V IS = 5 V -.8 - ms Over temperature protection T j(to) Threshold junction temperature V IS = 5 V; from I D A 2 5 - - C INPUT CHARACTERISTICS T mb = 25 C unless otherwise specified. The supply for the logic and overload protection is taken from the input. V IS(TO) Input threshold voltage V DS = 5 V; I D = ma..5 2. V I IS Input supply current V IS = 5 V; normal operation -.2.35 ma V ISR Protection reset voltage 3 2. 2.6 3.5 V V ISR Protection reset voltage T j = 5 C. - - I ISL Input supply current V IS = 5 V; protection latched.5.2 2. ma V (BR)IS Input clamp voltage I I = ma 6 7 - V R IG Input series resistance to gate of power MOSFET - 4 - kω The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for P DSM, which is always the case when V DS is less than V DSP maximum. Refer to OVERLOAD PROTECTION LIMITING VALUES. 2 The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum I D ensures this condition. 3 The input voltage below which the overload protection circuits will be reset. January 993 3 Rev 2.6
TRANSFER CHARACTERISTICS T mb = 25 C g fs Forward transconductance V DS = V; I DM = 3 A t p 3 µs; δ. 6 - S I D(SC) Drain current V DS = 3 V; V IS = 5 V - 4 - A SWITCHING CHARACTERISTICS T mb = 25 C. R I = 5 Ω. Refer to waveform figures and test circuits. t d on Turn-on delay time V DD = 3 V; V IS = 5 V - 2.5 - µs t r Rise time resistive load R L = 2. Ω - 5 - µs t d off Turn-off delay time V DD = 3 V; V IS = V - - µs t f Fall time resistive load R L = 2. Ω - 7 - µs t d on Turn-on delay time V DD = V; V IS = 5 V - 2 - µs t r Rise time inductive load I DM = 6 A - 4 - µs t d off Turn-off delay time V DD = V; V IS = V - 5 - µs t f Fall time inductive load I DM = 6 A - - µs REVERSE DIODE LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT I S Continuous forward current T mb 25 C - 26 A REVERSE DIODE CHARACTERISTICS T mb = 25 C V SDS Forward voltage I S = 26 A; V IS = V; t p = 3 µs -..5 V t rr Reverse recovery time not applicable 2 - - - - ENVELOPE CHARACTERISTICS L d Internal drain inductance Measured from contact screw on - 3.5 - nh tab to centre of die L d Internal drain inductance Measured from drain lead 6 mm - 4.5 - nh from package to centre of die L s Internal source inductance Measured from source lead 6 mm - 7.5 - nh from package to source bond pad During overload before short circuit load protection operates. 2 The reverse diode of this type is not intended for applications requiring fast reverse recovery. January 993 4 Rev 2.6
2 9 8 7 6 5 4 3 2 PD% Normalised Power Derating 2 4 6 8 2 4 Tmb / C Fig.2. Normalised power dissipation. P D % = P D /P D (25 C) = f(t mb ). Zth / (K/W) D =.5.2..5.2 D = T T t. E-7 E-5 E-3 E- E+ t / s Fig.5. Transient thermal impedance. Z th j-mb = f(t); parameter D = t p /T P D tp tp 2 9 8 7 6 5 4 3 2 ID% Normalised Current Derating 2 4 6 8 2 4 Tmb / C Fig.3. Normalised continuous drain current. I D % = I D /I D (25 C) = f(t mb ); conditions: V IS = 5 V 8 7 6 5 4 3 2 = 6 4 8 2 6 2 24 28 Fig.6. Typical output characteristics, T j = 25 C. ID = f(v DS ); parameter V IS ; t p = 25 µs & t p < t d sc 5 4 3 2 ID & IDM / A Overload protection characteristics not shown 5 RDS(ON) = VDS/ID DC tp = us ms ms ms us Fig.4. Safe operating area. T mb = 25 C I D & I DM = f(v DS ); I DM single pulse; parameter t p 4 3 2 VIS = 6 V VIS = 5 V VIS = 4 V 2 3 4 5 Fig.7. Typical on-state characteristics, T j = 25 C. ID = f(v DS ); parameter V IS ; t p = 25 µs January 993 5 Rev 2.6
.2 RDS(ON) / ohm a Normalised RDS(ON) = f(tj).5 ( 3 V ).5. VIS = 4 V 5 V 6 V..5.5 2 4 6 8 Fig.8. Typical on-state resistance, T j = 25 C. R DS(ON) = f(i D ); parameter V IS ; t p = 25 µs -6-4 -2 2 4 6 8 2 4 Tj / C Fig.. Normalised drain-source on-state resistance. a = R DS(ON) /R DS(ON) 25 C = f(t j ); I D = 3 A; V IS = 5 V 5 td sc / ms 4 3 NORMAL 2 RESET OVERLOAD PROTECTION LATCHED. 2 3 4 5. PDS / kw Fig.9. Typical transfer characteristics, T j = 25 C. I D = f(v IS ) ; conditions: V DS = V; t p = 25 µs PDSM Fig.2. Typical overload protection characteristics. t d sc = f(p DS ); conditions: V IS 4 V; T j = 25 C. 26 24 22 2 8 6 4 2 8 6 4 2 gfs / S 2 3 4 5 6-6 -4-2 2 4 6 8 2 4 Tmb / C Fig.. Typical transconductance, T j = 25 C. g fs = f(i D ); conditions: V DS = V; t p = 25 µs 2 8 6 4 2 PDSM% Fig.3. Normalised limiting overload dissipation. P DSM % = P DSM /P DSM (25 C) = f(t mb ) January 993 6 Rev 2.6
Energy & Time 5 II / ua.5 Time / ms Energy / J Tj(TO) -6-2 2 6 4 8 22 Tmb / C Fig.4. Typical overload protection characteristics. Conditions: V DD = 3 V; V IS = 5 V; SC load = 3 mω 4 3 2 Tj = 25 C 5 C 2 4 6 8 Fig.7. Typical DC input characteristics. I I = f(v IS ); normal operation; parameter: T j 3 3 IISL / ma PROTECTION LATCHED 2 2 typ. RESET NORMAL 5 6 7 Fig.5. Typical clamping characteristics, 25 C. I D = f(v DS ); conditions: V IS = V; t p 5 µs 2 4 6 8 Fig.8. Typical DC input characteristics, T j = 25 C. I ISL = f(v IS ); overload protection operated I D = A VIS(TO) / V IS / A 2 max. typ. min. 5-6 -4-2 2 4 6 8 2 4 Tj / C Fig.6. Input threshold voltage. V IS(TO) = f(t j ); conditions: I D = ma; V DS = 5 V 2 VSD / V Fig.9. Typical reverse diode current, T j = 25 C. I S = f(v SDS ); conditions: V IS = V January 993 7 Rev 2.6
VDD VDD = VCL RL LD t p : adjust for correct ID TOPFET D TOPFET D I R I VIS D.U.T. S ID measure V R Fig.2. Test circuit for resistive load switching times. P I R I VIS D.U.T. S ID measure V R Fig.23. Test circuit for inductive load switching times. P 5 RESISTIVE TURN-ON 5 INDUCTIVE TURN-ON 5 td on tr 9% 5 tr td on 9% % % 2 3 4 5 time / us Fig.2. Typical switching waveforms, resistive load. V DD = 3 V; R L = 2. Ω; R I = 5 Ω, T j = 25 C. 2 3 4 5 time / us Fig.24. Typical switching waveforms, inductive load. V DD = V; I D = 6 A; R I = 5 Ω, T j = 25 C. 5 RESISTIVE TURN-OFF 5 INDUCTIVE TURN-OFF td off tf td off tf 5 9% 9% 5 9% 9% % % 5 5 2 time / us Fig.22. Typical switching waveforms, resistive load. V DD = 3 V; R L = 2. Ω; R I = 5 Ω, T j = 25 C. 5 5 2 time / us Fig.25. Typical switching waveforms, inductive load. V DD = V; I D = 6 A; R I = 5 Ω, T j = 25 C. January 993 8 Rev 2.6
2 9 8 7 6 5 4 3 2 EDSM% 2 4 6 8 2 4 Tmb / C Fig.26. Normalised clamping energy rating. E DSM % = f(t mb ); conditions: I D = 26 A; V IS = 5 V.5.5 Iiso normalised to 25 C -6-2 2 6 4 8 Tj / C Fig.29. Normalised input current (normal operation). I IS /I IS 25 C = f(t j ); V IS = 5 V VDS ID V(CL)DSS VDD L + VDD.5 Iisl normalised to 25 C VIS I TOPFET P D VDS D.U.T. - -ID/ RIS Schottky S R shunt Fig.27. Clamping energy test circuit, R IS = 5 Ω. E DSM =.5 LI 2 D V (CL)DSS /(V (CL)DSS V DD ).5-6 -2 2 6 4 8 Tj / C Fig.3. Normalised input current (protection latched). I ISL /I ISL 25 C = f(t j ); V IS = 5 V ma Idss ua ua typ. ua na 2 4 6 8 2 4 Tj / C Fig.28. Typical off-state leakage current. I DSS = f(t j ); Conditions: V DS = 4 V; I IS = V. January 993 9 Rev 2.6
MECHANICAL DATA Dimensions in mm Net Mass: 2 g 4,5 max,3 max 3,7,3 2,8 5,9 min 5,8 max 3, max not tinned,3 max (2x) 2 3 2,54 2,54 3, 3,5 min,9 max (3x),6 2,4 Notes. Refer to mounting instructions for TO22 envelopes. 2. Epoxy meets UL94 V at /8". Fig.3. TO22AB; pin 2 connected to mounting base. January 993 Rev 2.6
DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. January 993 Rev 2.6
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