The A roject: V ower Supplies For The Next High Energy hysics Experiments Milano, ctober 19, 2011 Agostino anza, on behalf of the A Collaboration M. Alderighi (1,6), M. Citterio (1), M. Riva (1,8),. Cova (3,10), N. Delmonte (3,10), A. anza (3), R. Menozzi (10), A. accagnella (2,9), F. Sichirollo (2,9), G. Spiazzi (2,9), M. Stellini (2,9), S. Baccaro (4,5), F. Iannuzzo (4,7), A. Sanseverino (4,7), G. Busatto (7), V. De uca (7) (1) INFN Milano, (2) INFN adova, (3) INFN avia, (4) INFN Roma, (5) ENEA UTTMAT, (6) INAF, (7) University of Cassino, (8) University of Milano, (9) University of adova, (10) University of arma
Features of the S systems required by the present experiments (mainly at HC) Extensive use of the DC/DC technology, which requires a careful design in terms of EMC Integration with detectors at the design level, to avoid both mechanical and electrical criticalities Necessity of rad-hard devices, so to place modules in the experimental caverns Necessity of B-tolerant systems, to be able to place them close to detectors Implementation ti of redundancy, d because of difficult access of no access at all Very complex DCS systems, in order to get a fully remote control Industrial engineering design and industrial scale production Milano, ctober 19 2011 The A roject - Agostino anza 2
Requirements of future HC upgrades and new experiments New design, full replacing the present systems whose design dates from early 2000 years Increased rad-hard performance, because of the increased luminosity of accelerators Minimization of power loss in cables used for carrying current from S distributors to the front-end of detectors, moving distributors as close as possible to the front-end Increased B-tolerance of systems getting closer to detectors t and magnets Better reliability and controls, in order to reduce access time and increase the overall detector efficiency Avoiding industrial intellectual property, trying to implement the CERN pen Hardware policy Milano, ctober 19 2011 The A roject - Agostino anza 3
The A proposal System architectures Case study: ATAS Ar calorimeters Characteristics: Main isolated converter with N1 redundancy High DC bus 280 Vdc CRATE Card #3 D Card #2 Card er #1 Convert D Convert D er Convert D er Convert D er Convert D er Convert er ni Converter voltage Main DC/DC Converter (12V or more) ni Converter Distributed Non- Isolated oint of oad Converters (ni) with high step-down ratio Regulated DC bus ni Converter Converter with high step-down ratio Milano, ctober 19 2011 The A roject - Agostino anza 4
The A proposal System architectures arallel study: ATAS Muon detectors Characteristics: Main isolated converter with N1 redundancy High DC bus voltage (12V or more) Distributed ib t Non- Isolated oint of oad Converters (ni) with high step-down ratio, on-chamber installed and high B- tolerant 280 Vdc Main DC/DC Converter Regulated DC bus Muon Detectors Chamb #3 D Chamb #2 Convert Chamb D er #1 Convert D er Convert D er Convert D ni er Convert er Converter D Convert er Converter with high step-down ratio Milano, ctober 19 2011 The A roject - Agostino anza 5
The A proposal - Topologies 3modules1.5kWeach The Main DC/DC Converter redundancy n1 current sharing interleaved operations Switch In ine Converter - SIC phase shift operation ZVS transitions high efficiency reduced switch voltage stress high frequency capability V in C 4 C 3 C 2 i T 1 C 1 T 2 Q 4 Q 3 T 3 i Q 2 T T2 4 Q 1 C o V out = 12V 33 cm Efficiency 1 Transient response 0.9 (B ext = 13 cm 7cm 08 0.8 0.7 0.6 0) 0.5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 utput power kw] V out I load - V out utput voltage response to a load step change (25 A 37 A) Milano, ctober 19 2011 The A roject - Agostino anza 6
The A proposal Thermal sizing 3D Finite Element Model (FEM) FE modeling of the main heating components: Input power MSFETs utput diodes Inductor lanar transformer Thermal measurements 1 Thermal characterization on single components, to validate models Thermal design Designed advanced solutions to improve heat exchange: ower MSFETs mounted on IMS board IST diode isolated package directly mounted on baseplate Copper thermal layers for transformer core cooling Silicone gap filler for transformer windings cooling Thermal simulation and measurements 2 reliminary thermal measurements on the air cooled whole converter Final requirements Main converter output t power = 3x1 kw Case dimensions: 150 x 402 x 285 mm 3 Max case temperature = 18 C Water cooling system delivery = 1.9 l/min, Δp = 350 mbar T inlet = 18 C, T outlet 25 C Milano, ctober 19 2011 The A roject - Agostino anza 7
The A proposal - Topologies Specifications: Input voltage: U g = 12 V utput voltage: U o =2.5V utput current: I o =3A p. frequency: f s =1MHz 350 nh air core inductors Dim.:=6cm,W=4.2cm The oint of oads C in U in 1 S 1 S 2 S 4 U C o R o U C C1 1 2 - S 3 - D<50% U o = U in D/2 Specifications: Input voltage: Ug =12V utput voltage: U o =2V utput current: I o = 20A p. frequency: f s = 280 khz 2.2 μh ferrite core inductors Dim.:=7cm,W=3.5cm S1 S C 1 4 S 3 1 2 Interleaved Buck with Voltage Divider IBVD Characteristics: Zero voltage switch turn on High step-down ratio Reduced switch voltage stress (U in /2) Interleaved operation with automatic current sharing and ripple cancellation Milano, ctober C 19 2011 The A roject - Agostino anza o 8
The A proposal Rad-hard devices Seeking for power MSFETs radiation tolerant up to 10kGy and 10 14 /(s cm 2 ) neutrons and protons: many components, with V d ranging from 30V to 200V and polarized in various configurations, were tested at the 60 Co γ ray source in the ENEA center of Casaccia, near Roma same components were tested with a heavy ion beam, 75 Br at 155MeV, at INFN aboratori Nazionali del Sud in Catania within the end of the year same components will be tested under neutrons, at the Casaccia nuclear reactor Tapiro, and under protons, at INFN NS Seeking for power MSFETs, controllers and FGA radiation tolerant: first irradiation was performed under 216MeV proton beam in Boston, at Massachusetts General Hospital facility, using some of devices irradiated in Italy. ther irradiation campaigns are planned at the same facilities in the next months Results are still preliminary and under analysis. ther irradiation campaigns are necessary in order to select good devices Milano, ctober 19 2011 The A roject - Agostino anza 9
The A proposal Rad-hard devices Some preliminary results of γ irradiation up to 9600 Gy of the 200V MSFET IRF630 Milano, ctober 19 2011 The A roject - Agostino anza 10
The A proposal New technologies Study of EC GaNs: Work in progress since early 2011 Two device types under test: 40V and 200V Difficulties found for soldering devices on CB Electrical characterization in progress Rad-hard tests will come soon V DC vc GaN test circuit DRIVER DUT C 1 i DUT R shunt V CC Measured voltage and current during switching periods of a GaN device R shunt = 85 mω U GS [1V/div] U GS [1V/div] U DS [20V/div] -I DS [1A/div] -I DS [1A/div] Time [10ns/div] Turn on interval @ V cc = 100V, I DS = 0A -p off (t) Turn off interval @ V cc = 100V, I DS = 5A Time [10ns/div] Milano, ctober 19 2011 The A roject - Agostino anza 11
The A proposal New technologies Study of high-b materials: Collaboration with the private company FN S.p.A. Base material by Hoganas, FES168 HQ, Fe Si(6.5-6.9%) 69%) roblems found and solved in the injection moulding phase Still problems in the sintherization phase First B tests by end of the year (hopefully) First moulded samples of FES168 Collaboration with a CERN group (F. Faccio). It aims at studying current sharing of already existing integrated DC/DC converters with low output currents (< 3A), designed by that group Milano, ctober 19 2011 The A roject - Agostino anza 12