TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

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TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7W125FU Dual BUS Buffer The TC7W125FU is a high speed C 2 MOS Dual BUS Buffers fabricated with silicon gate C 2 MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the C 2 MOS low power dissipation. The require 3-state control input G to be set high to place the output into the high impedance. All inputs are equipped with protection circuits agait static discharge or traient excess voltage. Features Weight: 0.02 g (typ.) High speed: tpd = 10 (typ.) at VCC = 5 V Low power dissipation: ICC = 2 µa (max) at Ta = 25 C High noise immunity: VNIH = VNIL = 28% VCC (min) Output drive capability: 15 LSTTL loads Symmetrical output impedance: IOH = IOL = 6 ma (min) Balanced propagation delays: tplh tphl Wide operating voltage range: VCC (opr) = 2 to 6 V Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Supply voltage range V CC 0.5 to 7 V DC input voltage V IN 0.5 to V CC + 0.5 V DC output voltage V OUT 0.5 to V CC + 0.5 V Input diode current I IK ±20 ma Output diode current I OK ±20 ma DC output current I OUT ±35 ma DC V CC /ground current I CC ±37.5 ma Power dissipation P D 300 mw Storage temperature range T stg 65 to 150 C Lead temperature (10 s) T L 260 C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditio (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautio / Derating Concept and Methods ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1993-04 1

Marking Pin Configuration (top view) Part No. V CC 8 G 2 7 Y2 6 A2 5 7 W 1 2 5 Lot No. 1 G 1 2 A1 3 Y2 4 GND Logic Diagram Truth Table G1 A1 G2 A2 (1) (2) (7) (5) EN (6) (3) Y1 Y2 Inputs Output G A Y H X Z L L L L H H X: Don t care Z: High impedance Operating Ranges Characteristics Symbol Rating Unit Supply voltage V CC 2 to 6 V Input voltage V IN 0 to V CC V Output voltage V OUT 0 to V CC V Operating temperature range T opr 40 to 85 C 0 to 1000 (V CC = 2.0 V) Input rise and fall time t r, t f 0 to 500 (V CC = 4.5 V) 0 to 400 (V CC = 6.0 V) 2

Electrical Characteristics DC Electrical Characteristics Characteristics Symbol Test Condition Input voltage Output voltage High level V IH Low level V IL High level V OH V IN = V IH or V IL Low level V OL V IN = V IL I OH = 20 µa Ta = 25 C Ta = 40 to 85 C V CC (V) Min Typ. Max Min Max 2.0 1.5 1.5 4.5 3.15 3.15 6.0 4.2 4.2 2.0 0.5 0.5 4.5 1.35 1.35 6.0 1.8 1.8 2.0 1.9 2.0 1.9 4.5 4.4 4.5 4.4 6.0 5.9 6.0 5.9 I OH = 6 ma 4.5 4.18 4.31 4.13 I OH = 7.8 ma 6.0 5.68 5.80 5.63 I OL = 20 µa 2.0 0 0.1 0.1 4.5 0 0.1 0.1 6.0 0 0.1 0.1 I OL = 6 ma 4.5 0.17 0.26 0.33 I OL = 7.8 ma 6.0 0.18 0.26 0.33 Unit V V 3-state output off-state current I OZ V IN = V IH or V IL V OUT = V CC or GND 6.0 ±0.5 ±5.0 µa Input leakage current I IN V IN = V CC or GND 6.0 ±0.1 ±1.0 µa Quiescent supply current I CC V IN = V CC or GND 6.0 2.0 20.0 µa 3

AC Electrical Characteristics (input t r = t f = 6 ) Characteristics Symbol Test Condition Output traition time Propagation delay time Output enable time Output disable time t TLH t THL t plh t phl t pzl t pzh t plz t phz R L = 1 kω 50 Ta = 25 C TC7W125FU Ta = 40 to 85 C C L V CC (V) Min Typ. Max Min Max 50 150 50 150 R L = 1 kω 50 2.0 20 60 75 4.5 6 12 15 6.0 5 10 13 2.0 30 90 115 4.5 11 18 23 6.0 10 15 20 2.0 42 130 165 4.5 14 26 33 6.0 12 22 28 2.0 30 90 115 4.5 11 18 23 6.0 10 15 20 2.0 42 130 165 4.5 14 26 33 6.0 12 22 28 2.0 24 100 125 4.5 12 20 25 6.0 10 17 21 Input capacitance C IN 5 10 10 pf Output capacitance C OUT 10 pf Power dissipation capacitance C PD (Note) 41 pf Note: C PD is defined as the value of internal equivalent capacitance which is calculated from the operating current coumption without load. Average operating current can be obtained by the equation: I CC (opr) = C PD V CC f IN + I CC /2 (per gate) Unit 4

Package Dimeio Weight: 0.02 g (typ.) 5

RESTRICTIONS ON PRODUCT USE Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are respoible for complying with safety standards and for providing adequate desig and safeguards for their hardware, software and systems which minimize risk and avoid situatio in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. 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Customers are solely respoible for all aspects of their own product design or applicatio, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applicatio; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such desig and applicatio. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). 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