FQB11P06 / FQI11P06 P-Channel QFET MOSFET -60 V, -11.4 A, 175 mω Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. G S D D -PAK FQB Series G D S Features I -PAK FQI Series G! March 013-11.4 A, -60 V, R DS(on) = 175 mω (Max) @ = -10 V, I D = -5.7 A Low Gate Charge (Typ. 13 nc) Low Crss (Typ. 45 pf) 100% Avalanche Tested 175 C Maximum Junction Temperature Rating S!! D Absolute Maximum Ratings T C = 5 C unless otherwise noted Symbol Parameter FQB11P06 / FQI11P06 Unit S Drain-Source Voltage -60 V I D Drain Current - Continuous (T C = 5 C) -11.4 A Thermal Characteristics * When mounted on the minimum pad size recommended (PCB Mount) - Continuous (T C = 100 C) -8.05 A I DM Drain Current - Pulsed (Note 1) -45.6 A S Gate-Source Voltage ± 5 V E AS Single Pulsed Avalanche Energy (Note ) 160 mj I AR Avalanche Current (Note 1) -11.4 A E AR Repetitive Avalanche Energy (Note 1) 5.3 mj dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns P D Power Dissipation (T A = 5 C) * 3.13 W Power Dissipation (T C = 5 C) 53 W - Derate above 5 C 0.35 W/ C T J, T STG Operating and Storage Temperature Range -55 to +175 C T L Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 C Symbol Parameter Typ Max Unit R θjc Thermal Resistance, Junction-to-Case --.85 C/W R θja Thermal Resistance, Junction-to-Ambient * -- 40 C/W R θja Thermal Resistance, Junction-to-Ambient -- 6.5 C/W
Elerical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, I D = -50 µa -60 -- -- V BS Breakdown Voltage Temperature / T J Coefficient I D = -50 µa, Referenced to 5 C -- -0.07 -- V/ C I DSS = -60 V, = 0 V -- -- -1 µa Zero Gate Voltage Drain Current = -48 V, T C = 150 C -- -- -10 µa I GSSF Gate-Body Leakage Current, Forward = -5 V, = 0 V -- -- -100 na I GSSR Gate-Body Leakage Current, Reverse = 5 V, = 0 V -- -- 100 na On Characteristics (th) Gate Threshold Voltage =, I D = -50 µa -.0 -- -4.0 V R DS(on) Static Drain-Source V On-Resistance GS = -10 V, I D = -5.7 A -- 0.14 0.175 Ω g FS Forward Transconductance = -30 V, I D = -5.7 A (Note 4) -- 5.1 -- S Dynamic Characteristics C iss Input Capacitance = -5 V, = 0 V, -- 40 550 pf C oss Output Capacitance f = 1.0 MHz -- 195 50 pf C rss Reverse Transfer Capacitance -- 45 60 pf Switching Characteristics t d(on) Turn-On Delay Time -- 6.5 5 ns = -30 V, I D = -5.7 A, t r Turn-On Rise Time R G = 5 Ω -- 40 90 ns t d(off) Turn-Off Delay Time -- 15 40 ns t f Turn-Off Fall Time (Note 4, 5) -- 45 100 ns Q g Total Gate Charge = -48 V, I D = -11.4 A, -- 13 17 nc Q gs Gate-Source Charge = -10 V --.0 -- nc Q gd Gate-Drain Charge (Note 4, 5) -- 6.3 -- nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- -11.4 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- -45.6 A V SD Drain-Source Diode Forward Voltage = 0 V, I S = -11.4 A -- -- -4.0 V t rr Reverse Recovery Time = 0 V, I S = -11.4 A, -- 83 -- ns Q rr Reverse Recovery Charge di F / dt = 100 A/µs (Note 4) -- 0.6 -- µc Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. L = 1.44mH, I AS = -11.4A, = -5V, R G = 5 Ω, Starting T J = 5 C 3. I SD -11.4A, di/dt 300A/µs, BS, Starting T J = 5 C 4. Pulse Test : Pulse width 300µs, Duty cycle % 5. Essentially independent of operating temperature
Typical Characteristics R DS(on) [Ω], Drain-Source On-Resistance 10 1 10 0 0.8 0.6 0.4 0. Top : - 15.0 V - 10.0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V 10 0 10 1 -, Drain-Source Voltage [V] = - 10V = - 0V 1. 50µ s Pulse Test. T C = 5 Figure 1. On-Region Characteristics Note : T = 5 J 0.0 0 10 0 30 40 50 R, Reverse Drain Current [A] 10 1 10 0 4 6 8 10 10 1 10 0 5 175 175-55 -, Gate-Source Voltage [V] 5 1. = 0V. 50µ s Pulse Test 0.0 0. 0.4 0.6 0.8 1.0 1. 1.4 1.6 1.8.0 -V SD, Source-Drain Voltage [V] 1. = -30V. 50µ s Pulse Test Figure. Transfer Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Capacitance [pf] 100 1000 800 600 400 00 C oss C iss C rss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 1. = 0 V. f = 1 MHz -, Gate-Source Voltage [V] 1 10 8 6 4 = -30V = -48V Note : I = -11.4 A D 0 10 0 10 1 -, Drain-Source Voltage [V] 0 0 4 6 8 10 1 14 Q G, Total Gate Charge [nc] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Typical Characteristics (Continued) -BS, (Normalized) Drain-Source Breakdown Voltage 1. 1.1 1.0 0.9 0.8-100 -50 0 50 100 150 00 10 10 1 10 0 T J, Junction Temperature [ o C] Operation in This Area is Limited by R DS(on) 10 0 10 1 10 -, Drain-Source Voltage [V] DC 1. T C = 5 o C. T J = 175 o C 3. Single Pulse 10 ms 1. = 0 V. I D = -50 µ A Figure 7. Breakdown Voltage Variation vs. Temperature 1 ms 100 µs R DS(ON), (Normalized) Drain-Source On-Resistance.5.0 1.5 1.0 0.5 0.0-100 -50 0 50 100 150 00 1 10 8 6 4 T J, Junction Temperature [ o C] 0 5 50 75 100 15 150 175 T C, Case Temperature [ ] 1. = -10 V. I D = -5.7 A Figure 8. On-Resistance Variation vs. Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Z θ JC (t), Thermal Response 10 0 0. 1. Z θ JC (t) =.85 /W M ax.. D uty F actor, D =t 1 /t 0.1 3. T JM - T C = P DM * Z θ JC (t) 0.05 D=0.5 0.0 0.01 single pulse P DM t 1 t 10-10 -5 10-4 10-3 10-10 0 10 1 t 1, Square W ave Pulse D uration [sec] Figure 11. Transient Thermal Response Curve
1V 00nF -3mA 50KΩ 300nF Gate Charge Test Circuit & Waveform Same Type as DUT -10V Q gs DUT Resistive Switching Test Circuit & Waveforms Q g Q gd Charge R L t on t off t d(on) t r t d(off) tf R G 10% -10V DUT 90% Unclamped Inductive Switching Test Circuit & Waveforms L 1 E AS = ---- LI AS BS -------------------- BS - I D t p Time R G I D (t) (t) -10V DUT I AS t p BS
Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT _ I SD Driver R G Compliment of DUT (N-Channel) dv/dt controlled by RG I SD controlled by pulse period L ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period 10V I SD ( DUT ) ( DUT ) Body Diode Reverse Current I RM di/dt I FM, Body Diode Forward Current V SD Body Diode Forward Voltage Drop Body Diode Recovery dv/dt
Mechanical Dimensions D - PAK Dimensions in Millimeters
Mechanical Dimensions I - PAK Dimensions in Millimeters
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