2N2219A 2N2222A HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 75 V VCEO Collector-Emitter Voltage (IB = 0) 40 V V EBO Emitter-Base Voltage (I C = 0) 6 V I C Collector Current 0.6 A I CM Collector Peak Current (t p < 5 ms) 0.8 A P tot Total Dissipation at T amb 25 o C for 2N2219A for 2N2222A at TC 25 o C for 2N2219A for 2N2222A T stg Storage Temperature -65 to 175 T j Max. Operating Junction Temperature 175 0.8 0.5 3 1.8 W W W W o C o C February 2003 1/7
THERMAL DATA TO-39 TO-18 R thj-case Rthj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 50 187.5 83.3 300 o C/W o C/W ELECTRICAL CHARACTERISTICS (T case = 25 o C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CBO I CEX IBEX I EBO V (BR)CBO V (BR)CEO V (BR)EBO V CE(sat) VBE(sat) Collector Cut-off Current (I E = 0) Collector Cut-off Current (V BE = -3V) Base Cut-off Current (V BE = -3V) Emitter Cut-off Current (IC = 0) Collector-Base Breakdown Voltage (I E = 0) Collector-Emitter Breakdown Voltage (I B = 0) Emitter-Base Breakdown Voltage (IC = 0) Collector-Emitter Saturation Voltage V CB = 60 V V CB = 60 V T j = 150 o C V CE = 60 V 10 na VCE = 60 V 20 na V EB = 3 V 10 na I C = 10 µa 75 V I C = 10 ma 40 V I E = 10 µa 6 V I C = 150 ma I C = 500 ma I B = 15 ma I B = 50 ma Base-Emitter IC = 150 ma IB = 15 ma Saturation Voltage I C = 500 ma I B = 50 ma h FE DC Current Gain I C = 0.1 ma V CE = 10 V I C = 1 ma V CE = 10 V I C = 150 ma V CE = 10 V IC = 500 ma VCE = 10 V I C = 150 ma V CE = 1 V T amb = -55 o C h fe Small Signal Current Gain I C = 1 ma V CE = 10 V f = 1KHz f = 1KHz 10 10 0.3 1 0.6 1.2 2 f T Transition Frequency I C = 20 ma V CE = 20 V 300 MHz f = 100 MHz C EBO Emitter-Base I C = 0 V EB = 0.5 V f = 100KHz 25 pf Capacitance C CBO Collector-Base Capacitance I E = 0 V CB = 10 V f = 100 KHz 8 pf R e(hie) Real Part of Input I C = 20 ma V CE = 20 V 60 Ω Impedance f = 300MHz * Pulsed: Pulse duration = 300 µs, duty cycle 1 % 35 50 75 100 40 50 35 50 75 300 300 375 na µa V V V V 2/7
ELECTRICAL CHARACTERISTICS (continued) Symbol Parameter Test Conditions Min. Typ. Max. Unit NF Noise Figure I C = 0.1 ma V CE = 10 V 4 db f = 1KHz R g = 1KΩ hie Input Impedance IC = 1 ma VCE = 10 V h re Reverse Voltage Ratio I C = 1 ma V CE = 10 V h oe Output Admittance I C = 1 ma V CE = 10 V t d Delay Time V CC = 30 V I C = 150 ma I B1 = 15 ma V BB = -0.5 V tr Rise Time VCC = 30 V IC = 150 ma I B1 = 15 ma V BB = -0.5 V ts Storage Time VCC = 30 V IC = 150 ma I B1 = -I B2 = 15 ma tf Fall Time VCC = 30 V IC = 150 ma I B1 = -I B2 = 15 ma r bb C b c Feedback Time I C = 20 ma V CE = 20 V Constant f = 31.8MHz Pulsed: Pulse duration = 300 µs, duty cycle 1 % See test circuit 2 0.25 5 25 8 1.25 8 4 35 200 kω kω 10-4 10-4 µs µs 10 ns 25 ns 225 ns 60 ns 150 ps 3/7
Test Circuit fot t d, t r. PULSE GENERATOR : tr 20 ns PW 200 ns Z IN = 50 Ω TO OSCILLOSCOPE tr 5.0 ns ZIN < 100 KΩ C IN 12 pf Test Circuit fot t d, t r. PULSE GENERATOR : TO OSCILLOSCOPE : PW 10 µs t r < 5.0 ns ZIN = 50 Ω ZIN > 100 KΩ TC 5.0 ns CIN 12 pf 4/7
TO-18 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 12.7 0.500 B 0.49 0.019 D 5.3 0.208 E 4.9 0.193 F 5.8 0.228 G 2.54 0.100 H 1.2 0.047 I 1.16 0.045 L 45 o 45 o G D A H I F E L C B 0016043 5/7
TO-39 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 12.7 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 L 45 o (typ.) G D A H I F E L B P008B 6/7
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2003 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7
This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.