HAL24 Hall-effect sensor is a temperature stable, stress-resistant, Low Tolerance of Sensitivity micro-power switch. Superior high-temperature performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization. This method reduces the offset voltage normally caused by device over molding, temperature dependencies, and thermal stress. HAL24 is special made for low operation voltage,.6, to active the chip which is includes the following on a single silicon chip: voltage regulator, Hall voltage generator, small-signal amplifier, chopper stabilization, Schmitt trigger, CMOS output driver. Advanced CMOS wafer fabrication processing is used to take advantage of low-voltage requirements, component matching, very low input-offset errors, and small component geometries. This device requires the presence of unipolar magnetic fields for operation. The package type is in a Halogen Free version has been verified by third party Lab. Features and Benefits CMOS Hall IC Technology Strong RF noise protection.6 to 6 for battery-powered applications Operation down to.6, Unipolar Hall Switch Micro power consumption High Sensitivity for reed switch replacement applications Low sensitivity drift in crossing of Temp. range Ultra Low power consumption at ua (Avg) High ESD Protection, HBM > ±4K( min ) Totem-pole output Applications Solid state switch Handheld Wireless Handset Awake Switch ( Flip Cell/PHS Phone/Note Book/Flip ideo Set) Magnet proximity sensor for reed switch replacement in low duty cycle applications Water Meter PDA PDD NB Pad PC
Functional Diagram DD Awake/Sleep Timing Control DD Offset Cancellation Amp Control Logic Out Hall Sensor GND Note: Static sensitive device; please observe ESD precautions. Reverse DD protection is not included. For reverse voltage protection, a 00Ω resistor in series with DD is recommended. HAL24, HBM > ±4K which is verified by third party lab. Typical application circuit DD OUT GND C:0nF C2:00pF
HAL24 Absolute Maximum Ratings At(Ta=2 ) Characteristics alues Unit Supply voltage,(dd) Output oltage,(out) -0. Unlimited Gauss ma Operating temperature range, (Ta) -40 to +8 Storage temperature range, (Ts) -6 to +0 Maximum Junction Temp,(Tj) 0 22 / 40 /W 49 / 90 /W 0 / 20 mw Reverse oltage, (DD) (OUT) Magnetic flux density Output current,(iout) Thermal Resistance (θja) K / SN (θjc) K / SN Package Power Dissipation, (PD) K / SN Note: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximumrated conditions for extended periods may affect device reliability. Electrical Specifications DC Operating Parameters Ta=2, DD=.8 Parameters Supply oltage,(dd) Supply Current,(IDD) Test Conditions Operating Min.6 Units 6 olts.4 ma Sleep State.6 μa 0 μa ua Output Leakage Output off Output High Current,(I off) oltage,(oh) IOUT=0.mA(Source) Output Low oltage,(ol) IOUT=0.mA(Sink) Awake mode time,(taw) Operating Sleep mode time,(tsl) Operating DD-0.2 Duty Cycle,(D,C) Max Awake State Average Electro-Static Discharge Typ 0.2 40 80 us 40 80 ms 0. HBM 4 % K
HAL24EST Magnetic Specifications DC Operating Parameters:Ta=2, DD=.8 Parameter Symbol Test Conditions Min. Typ. Max. Units Operating Point B OP N pole to branded side, B > BOP, Oout On 0 0 Gauss Release Point B RP N pole to branded side, B < BRP, out Off 0 20 Gauss Hysteresis B HY BOPx - BRPx 0 Gauss HAL24EST Output Behavior versus Magnetic Polar DC Operating Parameters:Ta = -40 to 8, DD =.8 to 6 Parameter Test condition OUT Null or weak magnetic field B=0 or B < BRP High North pole B>Bop(~0) Low ST Package SQ Package Out High State oltage in olts N Output 0 BRPS Magnetic Flux Density in Gauss BOPS Low State DSON S
Performance Graph Typical Supply oltage(dd) ersus Flux Density 4 Flux Density(Gauss) 2 Bop-S Brp-S - - -2 - -4 -.6 2.. 4.2 4.8.4 6 Supply oltage() Typical Temperature(TA) ersus Supply Current(IDD) Current consumption 9 Awake current(ua) sleep current(ma) Average current(ua) - -40-20 0 20 40 0 8 Temperature( ) Typical Supply oltage(dd) ersus Output oltage(dson) 20.0 Flux Density(Gauss) Typical Temperature(TA) ersus Flux Density 4 2 - Bop-S Brp-S - -2 - -4 - -40-20 0 20 40 0 8 Temperature( ) Typical Supply oltage(dd) ersus Supply current current(idd) Current consumption Awake current(ua) sleep current(ma) Average current(ua) 9 -.6 2.. 4.2 4.8.4 6 Supply oltage() Typical Temperature(TA) ersus Output oltage(dson) 20.0 Output Saturation oltage (m) 200.0 0.0 00.0 0.0 Output Saturation oltage (m) 200.0 0.0 00.0 0.0 0.0.6 2.. 4.2 4.8.4 6 Supply oltage() 0.0-40 -20 0 20 40 0 8 Temperature( )
HAL24 Typical Supply oltage(dd) ersus Leakage Current(IOFF) Power Dissipation versus Temperature(TA) 00 Package power Dissipation(mW Output Leakage Current(uA) 0.00 0.040 0.00 0.020 0.00 600 00 ST Package Rθja = 400 0 /w 00 200 00 0 0.000.6 2.. 4.2 4.8 Supply oltage().4 6-40 0 40 80 20 60 Temperature(
Sensor Location, package dimension and marking HAL24 Package HAL24 ST Package Date Code X X Week Code week 2 4 6 8 9 0 2 code SA SB SC SD SE SF SG SH SI SJ SK SL SM week 4 6 8 9 20 2 22 2 24 2 26 code SN SO SP SQ SR SS ST SU S SW SX SY SZ week 2 28 29 0 2 4 6 8 9 code TA TB TC TD TE TF TG TH TI TJ TK TL TM week 40 4 42 4 44 4 46 4 48 49 0 2 code TN TO TP TQ TR TS TT TU T TW TX TY TZ EX:204 Year_8 Week SH
Sensor Location, package dimension and marking HAL24ESQ Package SQ Package Hall Plate Chip Location (Top view) NOTES:. PINOUT (See Top iew at left) Pin Pin 2 Pin DD Output GND 2. Controlling dimension: mm;. Chip rubbing will be 0mil maximum; 4. Chip must be in PKG. center. Hall Sensor Location 2 HAL24 SQ Package Date Code X X Week Code week 2 4 6 8 9 0 2 code SA SB SC SD SE SF SG SH SI SJ SK SL SM week 4 6 8 9 20 2 22 2 24 2 26 code SN SO SP SQ SR SS ST SU S SW SX SY SZ week 2 28 29 0 2 4 6 8 9 code TA TB TC TD TE TF TG TH TI TJ TK TL TM week 40 4 42 4 44 4 46 4 48 49 0 2 code TN TO TP TQ TR TS TT TU T TW TX TY TZ EX:204 Year_8 Week SH